High-efficiency photocatalyst and high-response ultraviolet photodetector based on the Ga2SSe@GaN heterojunctions

Surfaces and Interfaces, Год журнала: 2024, Номер 52, С. 104996 - 104996

Опубликована: Авг. 23, 2024

Язык: Английский

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ZrS2/Ga2SSe heterojunction: A direct Z-scheme heterojunction with excellent photocatalytic performance across the entire pH range and high solar-to-hydrogen efficiency

International Journal of Hydrogen Energy, Год журнала: 2024, Номер 94, С. 166 - 178

Опубликована: Ноя. 11, 2024

Язык: Английский

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Distinct impacts of metal and non-metal doping on equilibrium and nonequilibrium electronic transport of new-type 2D iodine-based devices

Materials Today Chemistry, Год журнала: 2025, Номер 43, С. 102522 - 102522

Опубликована: Янв. 1, 2025

Язык: Английский

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Electronic and optical properties of the CrSSe/GaN heterostructures

Physica B Condensed Matter, Год журнала: 2025, Номер 701, С. 417003 - 417003

Опубликована: Фев. 6, 2025

Язык: Английский

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Self-Powered Photodetector with High Photocurrent and Polarization Sensitivity Based on the GaN/CdO Heterostructure

The Journal of Physical Chemistry C, Год журнала: 2025, Номер unknown

Опубликована: Апрель 3, 2025

Язык: Английский

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Photoelectric response of the GaInAsSb heterojunction nanopillars array resonance cathode to oblique incident light

Materials Science and Engineering B, Год журнала: 2025, Номер 318, С. 118156 - 118156

Опубликована: Апрель 5, 2025

Язык: Английский

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Superior Carrier Mobility and Photogalvanic Effect of Si9C15 and WSSe Heterojunctions

Materials Today Communications, Год журнала: 2025, Номер unknown, С. 112830 - 112830

Опубликована: Май 1, 2025

Язык: Английский

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van der Waals ZnO/HfSn₂N₄ Heterojunction with Exceptional Photoresponse for Photodetectors

ACS Applied Materials & Interfaces, Год журнала: 2024, Номер 16(43), С. 58802 - 58810

Опубликована: Окт. 21, 2024

Two-dimensional van der Waals heterojunctions represent a promising avenue for spectrum of optoelectronic endeavors. Nonetheless, their deployment has been somewhat constrained by the suboptimal efficiency photocurrent generated. In this article, ZnO/HfSn2N4 heterojunction is proposed to achieve high photoresponse efficiency. First-principles calculations are utilized confirm that possesses thermal stability with direct bandgap (1.36 eV). It exhibits light absorption coefficient and carrier mobility (2.51 × 103 cm2 V-1 s-1), biaxial strain significant effect on modulation band structure. As tensile increases, changes nonlinearly, transitioning from type-II type-I heterojunction. When compressive decreases. Quantum transport simulations employed calculate density states transmission model, verifying its excellent (a peak reaching 4.93 a02/photon an extinction ratio 75.1). shows potentially efficient photodetector.

Язык: Английский

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Novel Carbon@BaMoZrFe12O19 photocatalytic peroxymonosulfate activation for ibuprofen removal

Vacuum, Год журнала: 2024, Номер 231, С. 113801 - 113801

Опубликована: Ноя. 3, 2024

Язык: Английский

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First-principles investigation of the ZnO/TiSn2N4 heterojunction: A promising photoresponse material for high-performance photodetectors

Applied Surface Science, Год журнала: 2024, Номер unknown, С. 162193 - 162193

Опубликована: Дек. 1, 2024

Язык: Английский

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