Theoretically design of 2D penta-BN2/penta-Graphene wdW heterostructure for NO gas sensing implications: a first-principles study DOI

Chenyu Tao,

Tong Chen, Wenhao Yang

и другие.

Surfaces and Interfaces, Год журнала: 2024, Номер 54, С. 105244 - 105244

Опубликована: Окт. 9, 2024

Язык: Английский

Borophene: The Frontier of Next-Generation Sensor Applications DOI

Nilpawan Sarma,

Hirendra Das, Pranjal Saikia

и другие.

ACS Sensors, Год журнала: 2025, Номер unknown

Опубликована: Фев. 11, 2025

Two-dimensional (2D) materials have captivated scientific imagination, and among this proliferating cadre of 2D compounds, borophene; a single layer boron atoms emerges as nonpareil substance owing to its distinctive structural, electronic, mechanical properties. This review investigates the extraordinary properties that borophene possesses, notably in χ3 β12 phases, which add directional metallic behavior, along with quite lot plasticity high carrier mobility. The synthesis has made significant strides thanks cutting-edge techniques like molecular beam epitaxy (MBE), atomic deposition (ALD), chemical vapor (CVD) physical (PVD), recent innovations breaking through scalability no-go areas that, past, hindered material's widespread use. Borophene's superior thermal, properties, contrast other graphene, accentuate potential for diverse applications, particularly realm next-generation sensors. It places particular emphasis on borophene's appositeness sensor technology, detailing structural intricacies unique topological characteristics make an exceptional candidate. By focusing mechanisms enable sensitivity flexibility, discussion brings light transformative interesting material while concurrently addressing state-of-the-art advancements research, thereby providing forward-looking perspective future opportunities challenges. Ultimately, work pinpoints how borophene, unprecedented technological promise, is poised reshape technology opens new avenues exploration broader field advanced functional materials.

Язык: Английский

Процитировано

1

Low lattice thermal conductance of buckled GeTe/antimonene vdW interface device: A DFT + NEGF study DOI

A. Sakthi Balaji,

Akash Ramasamy,

K. Janani Sivasankar

и другие.

Computational Materials Science, Год журнала: 2025, Номер 252, С. 113784 - 113784

Опубликована: Фев. 22, 2025

Язык: Английский

Процитировано

0

Theoretically design of 2D penta-BN2/penta-Graphene wdW heterostructure for NO gas sensing implications: a first-principles study DOI

Chenyu Tao,

Tong Chen, Wenhao Yang

и другие.

Surfaces and Interfaces, Год журнала: 2024, Номер 54, С. 105244 - 105244

Опубликована: Окт. 9, 2024

Язык: Английский

Процитировано

0