Artificial Synaptic Simulation Using Wurtzite AlScN-Based Ferroelectric Memristors DOI

Cong Han,

Yixin Wei, Haiming Qin

и другие.

ACS Applied Electronic Materials, Год журнала: 2024, Номер 7(1), С. 380 - 387

Опубликована: Дек. 16, 2024

Ferroelectric memristors have significant potential as the key component in neuromorphic computing technology that is critical post-Moore era. AlScN has emerged a promising ferroelectric material with wurtzite structure due to its large residual polarization, CMOS compatibility, great ability be miniaturized, and high Curie temperature. Here, Cu/Al0.73Sc0.27N/Pt coexistence of resistive switching (RS) threshold behaviors was fabricated, showing Roff/Ron ratio (105%), speed (<150 ns), long retention characteristic (>1500 s). By appropriately adjusting compliance current (CC), device exhibits gradual multiple conductance states. In addition, biological synaptic functions including paired-pulse facilitation (PPF) short-term plasticity (STP) long-term (LTP) transition were emulated successfully after verifying under pulse stimuli. These findings may applicable designing next-generation for efficient systems.

Язык: Английский

Ferroelectric artificial synapses for high-performance neuromorphic computing: Status, prospects, and challenges DOI Creative Commons
Le Zhao, Hongyuan Fang, Jie Wang

и другие.

Applied Physics Letters, Год журнала: 2024, Номер 124(3)

Опубликована: Янв. 15, 2024

Neuromorphic computing provides alternative hardware architectures with high computational efficiencies and low energy consumption by simulating the working principles of brain artificial neurons synapses as building blocks. This process helps overcome insurmountable speed barrier power from conventional von Neumann computer architectures. Among emerging neuromorphic electronic devices, ferroelectric-based have attracted extensive interest for their good controllability, deterministic resistance switching, large output signal dynamic range, excellent retention. Perspective briefly reviews recent progress two- three-terminal ferroelectric represented tunnel junctions field effect transistors, respectively. The structure operational mechanism devices are described, existing issues inhibiting high-performance synaptic corresponding solutions discussed, including linearity symmetry weight updates, consumption, device miniaturization. Functions required advanced systems, such multimodal multi-timescale plasticity, also summarized. Finally, remaining challenges in possible countermeasures outlined.

Язык: Английский

Процитировано

36

A neotype self-rectifying Cu3SnS4-MoO3 synaptic memristor for neuromorphic applications DOI

Wenbin Wei,

Hao Sun, Xiaofei Dong

и другие.

Chemical Engineering Journal, Год журнала: 2024, Номер 482, С. 148848 - 148848

Опубликована: Янв. 21, 2024

Язык: Английский

Процитировано

16

Memristor‐Based Bionic Tactile Devices: Opening the Door for Next‐Generation Artificial Intelligence DOI

Chuan Yang,

Hongyan Wang, Zelin Cao

и другие.

Small, Год журнала: 2023, Номер 20(19)

Опубликована: Дек. 27, 2023

Bioinspired tactile devices can effectively mimic and reproduce the functions of human system, presenting significant potential in field next-generation wearable electronics. In particular, memristor-based bionic have attracted considerable attention due to their exceptional characteristics high flexibility, low power consumption, adaptability. These provide advanced wearability high-precision sensing capabilities, thus emerging as an important research area within bioinspired This paper delves into integration memristors with other controlling systems offers a comprehensive analysis recent advancements devices. incorporate artificial nociceptors flexible electronic skin (e-skin) category bio-inspired sensors equipped capabilities for sensing, processing, responding stimuli, which are expected catalyze revolutionary changes human-computer interaction. Finally, this review discusses challenges faced by terms material selection, structural design, sensor signal processing development intelligence. Additionally, it also outlines future directions application prospects these devices, while proposing feasible solutions address identified challenges.

Язык: Английский

Процитировано

20

An Artificial LiSiOx Nociceptor with Neural Blockade and Self-Protection Abilities DOI
Zewen Li, Xin Lin,

Junqing Wei

и другие.

ACS Applied Materials & Interfaces, Год журнала: 2024, Номер 16(15), С. 19205 - 19213

Опубликована: Апрель 9, 2024

An artificial nociceptor, as a critical and special bionic receptor, plays key role in bioelectronic device that detects stimuli provides warnings. However, fully exploiting applications remains major challenge due to the lack of methods implementing basic nociceptor functions nociceptive blockade single device. In this work, we developed Pt/LiSiO

Язык: Английский

Процитировано

7

Artificial synaptic simulating pain-perceptual nociceptor and brain-inspired computing based on Au/Bi3.2La0.8Ti3O12/ITO memristor DOI Creative Commons
Hao Chen,

Zhihao Shen,

Wentao Guo

и другие.

Journal of Materiomics, Год журнала: 2024, Номер 10(6), С. 1308 - 1316

Опубликована: Апрель 21, 2024

Recently, memristors have garnered widespread attention as neuromorphic devices that can simulate synaptic behavior, holding promise for future commercial applications in computing. In this paper, we present a memristor with an Au/Bi3.2La0.8Ti3O12 (BLTO)/ITO structure, demonstrating switching ratio of nearly 103 over duration 104 seconds. It successfully simulates range behaviors, including long-term potentiation and depression, paired-pulse facilitation, spike-timing-dependent plasticity, spike-rate-dependent plasticity etc. Interestingly, also employ it to pain threshold, sensitization, desensitization behaviors pain-perceptual nociceptor (PPN). Lastly, by introducing differential pairs (1T1R-1T1R), train neural network, effectively simplifying the learning process, reducing training time, achieving handwriting digit recognition accuracy up 97.19%. Overall, proposed device holds immense potential field computing, offering possibilities next generation high-performance computing chips.

Язык: Английский

Процитировано

7

An Artificial Universal Tactile Nociceptor Based on 2D Polymer Film Memristor Arrays with Tunable Resistance Switching Behaviors DOI

Shaolin Du,

Yaru Song, Jiangyan Yuan

и другие.

ACS Applied Materials & Interfaces, Год журнала: 2024, Номер 16(26), С. 33907 - 33916

Опубликована: Июнь 18, 2024

Nociceptor is an important receptor in the organism's sensory system; it can perceive harmful stimuli and send signals to brain order protect body time. The injury degree of nociceptor be divided into three stages: self-healing injury, treatable permanent injury. However, current studies on simulation are limited stage due limitation untunable resistance switching behavior memristors. In this study, we constructed Al/2DPTPAK+TAPB/Ag memristor arrays with adjustable memory behaviors emulate biological neural network all stages. For purpose, a PDMS/AgNWs/ITO/PET pressure sensor was assembled mimic tactile perception skin. not only simulate response nociceptor, i.e., threshold, relaxation, no adaptation, sensitization but also These both demonstrated single form pattern mapping array.

Язык: Английский

Процитировано

7

A High‐Stability Pressure‐Sensitive Implantable Memristor for Pulmonary Hypertension Monitoring DOI
Zelin Cao, Yiwei Liu, Bai Sun

и другие.

Advanced Materials, Год журнала: 2024, Номер unknown

Опубликована: Ноя. 12, 2024

Pulmonary hypertension (PH) significantly affects the quality of life and lifespan humans has promoted development flexible implantable electronic devices for PH diagnosis prevention. Traditional based on von Neumann architecture face insurmountable challenges in processing large amounts biological data due to computational bottlenecks. Memristors, with integrated in-memory sensing computing capabilities, can effectively eliminate bottlenecks become one most promising products health monitoring. Here, a memristor Ag/MnO

Язык: Английский

Процитировано

7

Ferroelectric memristor and its neuromorphic computing applications DOI

Junmei Du,

Bai Sun,

Chuan Yang

и другие.

Materials Today Physics, Год журнала: 2024, Номер unknown, С. 101607 - 101607

Опубликована: Дек. 1, 2024

Язык: Английский

Процитировано

5

Olfactory-inspired neuromorphic artificial respiratory perception system with graphene oxide humidity sensor and organic electrochemical transistor DOI
Quanliang Zhao, Shiwei Ma,

Hong-Kuan Zhang

и другие.

Carbon, Год журнала: 2023, Номер 218, С. 118765 - 118765

Опубликована: Дек. 28, 2023

Язык: Английский

Процитировано

11

On-receptor computing utilizing vertical-structured cost-effective memristor DOI

Dongyeol Ju,

Subaek Lee,

Jungwoo Lee

и другие.

Journal of Alloys and Compounds, Год журнала: 2024, Номер 998, С. 174926 - 174926

Опубликована: Май 20, 2024

Язык: Английский

Процитировано

4