Self-Powered Photodetector with High Photocurrent and Polarization Sensitivity Based on the GaN/CdO Heterostructure DOI
Enling Li, Ke Qin, Yang Shen

и другие.

The Journal of Physical Chemistry C, Год журнала: 2025, Номер unknown

Опубликована: Апрель 3, 2025

Язык: Английский

Tunable photocatalytic and optoelectronic properties of SiTe/SiH heterostructure as a photocatalytic water splitting with high hydrogen production DOI

Shaimaa Amer Essaa,

Hamad Rahman Jappor

Journal of Physics and Chemistry of Solids, Год журнала: 2024, Номер 193, С. 112125 - 112125

Опубликована: Июнь 3, 2024

Язык: Английский

Процитировано

59
Highly Sensitive and Selective Defect WS2 Chemical Sensor for Detecting HCHO Toxic Gases DOI Creative Commons
Zhen Cui, Hanxiao Wang, Kunqi Yang

и другие.

Sensors, Год журнала: 2024, Номер 24(3), С. 762 - 762

Опубликована: Янв. 24, 2024

The gas sensitivity of the W defect in WS2 (VW/WS2) to five toxic gases—HCHO, CH4, CH3HO, CH3OH, and CH3CH3—has been examined this article. These gases were adsorbed on VW/WS2 surface, band, density state (DOS), charge difference (CDD), work function (W), current–voltage (I–V) characteristic, adsorption systems determined. Interestingly, for HCHO-VW/WS2, energy level contribution HCHO is closer Fermi level, transfer (B) largest (0.104 e), increase more obvious than other systems, slope I–V characteristic changes obviously, calculated highest. To sum up, sensitive HCHO. In conclusion, has a great deal promise producing chemical sensors due its high selectivity HCHO, which can aid precise efficient detection gases.

Язык: Английский

Процитировано

45
High carrier mobility and polarization sensitivity of AlN/Hf2CO2 heterojunction photodetector DOI
Zhen Cui, Xin Gao, Shuang Zhang

и другие.

Chinese Journal of Physics, Год журнала: 2024, Номер 91, С. 421 - 431

Опубликована: Авг. 1, 2024

Язык: Английский

Процитировано

33
The excellent electrocatalytic HER activity and photogalvanic effect of WS2/Ga2O3 based on Density Functional Theory DOI
Zhen Cui, Hanxiao Wang, Yang Shen

и другие.

International Journal of Hydrogen Energy, Год журнала: 2024, Номер 88, С. 898 - 905

Опубликована: Сен. 24, 2024

Язык: Английский

Процитировано

33
Perovskite/WSSe heterojunction photodetector with ultrahigh sensitivity and accuracy DOI
Zhen Feng Cui, Hanxiao Wang, Yi Luo

и другие.

Applied Surface Science, Год журнала: 2024, Номер unknown, С. 161853 - 161853

Опубликована: Ноя. 1, 2024

Язык: Английский

Процитировано

19
Self-powered photodetector of GaN/Sc2CCl2 heterojunction with high carrier mobility and polarization sensitivity DOI
Guoqing Zhang, Zhen Cui, Aiqin Song

и другие.

Physical Chemistry Chemical Physics, Год журнала: 2025, Номер unknown

Опубликована: Янв. 1, 2025

GaN/Sc 2 CCl heterojunction carrier mobility reaches up to 5670 cm V −1 s and photocurrent 12.78 a 0 per photon.

Язык: Английский

Процитировано

7
Bifunctional g-GaN/Si9C15 S-scheme heterojunction for efficient photocatalytic hydrogen evolution and photodetector DOI
Enling Li, Yanbo Dong, Zhen Cui

и другие.

Applied Surface Science, Год журнала: 2024, Номер 658, С. 159851 - 159851

Опубликована: Март 7, 2024

Язык: Английский

Процитировано

8
Electrical Properties and Current-Illumination Characteristics of the SiC/GaN Lateral Heterostructure DOI
Enling Li, Ke Qin, Zhen Cui

и другие.

The Journal of Physical Chemistry C, Год журнала: 2024, Номер 128(28), С. 11827 - 11834

Опубликована: Июнь 26, 2024

Язык: Английский

Процитировано

7
Efficient interfacial charge transfer in the MoSe2/SPtSe heterostructure improves the efficiency of hydrogen production from water splitting: A S-scheme photocatalyst DOI

Guolin Qian,

Y. Liu, Sili Huang

и другие.

International Journal of Hydrogen Energy, Год журнала: 2024, Номер 66, С. 676 - 688

Опубликована: Апрель 18, 2024

Язык: Английский

Процитировано

6
Density Functional Theory Study of AlN Nanosheets with Biphenylene Structure: Stability, Electronic, Thermoelectric, Mechanical, and Optical Properties DOI
Ebrahim Nemati‐Kande,

Sorour Faramarzi,

Shabnam Yavari

и другие.

ACS Applied Nano Materials, Год журнала: 2024, Номер 7(11), С. 12431 - 12444

Опубликована: Май 30, 2024

Biphenylene network (BPN) structures have garnered attention owing to the presence of 4-, 6-, 8-, and 12-membered rings in their unit cells, leading unique properties. Additionally, versatility aluminum (Al) combined with group V elements, particularly nitrogen (N) atoms, presents promising applications across various domains. These factors motivated us investigate BPN-AlN containing using density functional theory methods. lead large holes, making this structure useful for ion storage energy materials. This study contains stability (thermal, mechanical, dynamical), structural, electronic, thermoelectric, optical properties nanosheet. The dynamic proposed nanosheet was confirmed by absence negative modes phonon dispersion spectrum. Furthermore, minimal fluctuations ab initio molecular dynamics simulation, even at a high temperature 1500 K, prove thermal calculation leads nanosheet's melting temperature. has exhibited semiconductor behavior indirect band gap 4.025 eV. By investigating electron localization function, shows polar ionic bonds, which introduces as good candidate absorbing numerous substances like sensors. Seebeck coefficient exhibits highest peak values 359 μV/K (n-type) 305 (p-type) 300 K. ultralow lattice conductivity, approximately 0.46 W/mK confirms superior thermoelectric nanosheets. reveals significant absorption reflection ultraviolet light, highlighting potential protection. specific electronic imply that BPB-AlN may be used generation nano-optoelectronic technology design.

Язык: Английский

Процитировано

6