Bipolar resistive switching and optoelectronic synaptic behavior in an Au/HfO2/Hf0.5Zr0.5O2/HfO2/FTO multilayer memristor DOI

Rong-Shen Tong,

Yanping Jiang,

Xin-Gui Tang

и другие.

Materials Science in Semiconductor Processing, Год журнала: 2025, Номер 197, С. 109719 - 109719

Опубликована: Май 27, 2025

Язык: Английский

Multimodal In‐Sensor Computing Implemented by Easily‐Fabricated Oxide‐Heterojunction Optoelectronic Synapses DOI
Hongyuan Fang,

Shuanger Ma,

Jie Wang

и другие.

Advanced Functional Materials, Год журнала: 2024, Номер unknown

Опубликована: Авг. 5, 2024

Abstract The advent of big data and the Internet Things has created urgent demands for in‐sensor computing hardware with multimodal perception that can effectively resolve inefficiency, high latency, excessive energy consumption challenges faced by conventional sensory systems. Here, a simple‐structured optoelectronic synaptic device In 2 O 3 ·SnO /Nb:SrTiO (ITO/NSTO) heterostructure is proposed, which vividly demonstrates capabilities. First, ingenious responses under both optical electrical stimuli, neuromorphic system capable concurrently perceiving processing visual auditory information constructed. Using this to perform human emotion recognition task, misjudgment arising from single‐modal cognition thereby be avoided. Second, utilizing integrated sensing functions, along dynamic memories array, vision implemented real‐time monitoring moving vehicles, displays efficiency accuracy. This research not only provides an low‐cost easy mass‐produce, but also paves way next‐generation efficiently process signals.

Язык: Английский

Процитировано

53

Enhancing plasticity in optoelectronic artificial synapses: A pathway to efficient neuromorphic computing DOI Open Access
Jiahao Yuan, Chao Wu, Shunli Wang

и другие.

Applied Physics Letters, Год журнала: 2024, Номер 124(2)

Опубликована: Янв. 8, 2024

The continuous growth in artificial intelligence and high-performance computing has necessitated the development of efficient optoelectronic synapses crucial for neuromorphic (NC). Ga2O3 is an emerging wide-bandgap semiconductor with high deep ultraviolet absorption, tunable persistent photoconductivity, excellent stability toward electric fields, making it a promising component synapses. Currently reported often suffer from complex fabrication processes potential room improvement due to plasticity. To address issue low device plasticity practical application scenarios, we present amorphous (α-GaOx) flexible synapse. This synapse modulates light stimulus signals using electron/oxygen vacancies optical stimulation operates as visual storage information processing. We investigate synapses' by controlling number oxygen via plasma treatment method demonstrate its effective three-layer backpropagation neural network handwritten digit classification. Under same conditions, synaptic weight samples treated Ar exhibits higher rate change, current levels increasing 2–3 orders magnitude, achieving greater improved achieved accuracy 93.34%/94%, demonstrating their solutions insights future applications NC chips.

Язык: Английский

Процитировано

43

Fully UV Modulated Artificial Synapses with Integrated Sensing, Storage and Computation DOI

Shuyi Sun,

Tao Zhang,

Shuoqi Jin

и другие.

Advanced Functional Materials, Год журнала: 2024, Номер 34(36)

Опубликована: Апрель 9, 2024

Abstract Optical synaptic devices are considered a preferred substitute to electrical synapses for low‐energy, high‐efficiency neuromorphic computing (NC). However, most optical irreversible response severely restricts their application scenarios. In this study, fully photon‐modulated device constructed from Si‐doped beta‐gallium oxide ( β ‐Ga 2 O 3 )/ZnO heterojunction is demonstrated. The exhibits reversible conductance changes and mimics range of behaviors, which modulated by two different wavelengths (255 370 nm) UV light. Owing the device's plasticity, four types logic functions including “AND”, “OR”, “NOR” “NAND” implemented in stimulation. Furthermore, an artificial neural network (ANN) simulated based on excitatory inhibitory characteristics, programming scheme employed enhance network's performance, resulting high recognition rate 95.5% handwritten digits. synapse development strategy scheme, as presented work, advance utilization ANN.

Язык: Английский

Процитировано

17

Rise of Metal–Organic Frameworks: From Synthesis to E-Skin and Artificial Intelligence DOI

Qi‐Jun Sun,

Wentao Guo, Shuzheng Liu

и другие.

ACS Applied Materials & Interfaces, Год журнала: 2024, Номер 16(35), С. 45830 - 45860

Опубликована: Авг. 23, 2024

Metal–organic frameworks (MOFs) have attained broad research attention in the areas of sensors, resistive memories, and optoelectronic synapses on merits their intriguing physical chemical properties. In this review, recent progress synthesis MOFs electronic applications is introduced discussed. Initially, crystal structures properties encompassing optical, electrical, are discussed brief. Subsequently, advanced methods for introduced, categorized into hydrothermal approach, microwave synthesis, mechanochemical electrochemical deposition. After that, various roles widespread applications, including sensing, information storage, synapses, machine learning, artificial intelligence, discussed, highlighting versatility innovative solutions they provide to long-standing challenges. Finally, an outlook remaining challenges a future perspective proposed.

Язык: Английский

Процитировано

14

Fully visible light controlled neuro-synaptic ReRAM device based on metal oxide heterojunction DOI Open Access
Saransh Shrivastava, H. Chi, Stephen Ekaputra Limantoro

и другие.

Applied Physics Letters, Год журнала: 2024, Номер 124(13)

Опубликована: Март 25, 2024

Photoelectric synaptic devices as a combination of electronic synapse and photodetector are considered emerging bio-inspired device technologies. These have immense potential to conquer the bottleneck von Neumann architecture based traditional computing systems. In this Letter, we propose an all-oxide photoelectric neuro-synaptic resistive random access memory with structure ITO/Ga2O3/ZnO/ITO/Glass, in which conductance states reversibly tuned by two different wavelengths (405/522 nm) visible light spectrum. The strength pulse is altered investigate learning forgetting phases response device. A basic biomimetic function “learning-forgetting-rehearsal” behavior imitated up 20 cycles. Moreover, emulation some typical functions such associative switching between short long term plasticities indicate wavelength awareness Based on pure optically induced potentiation/depression characteristics, convolutional neural network simulation achieves overall test accuracy 82.5% for classification Zalando's article images. noise tolerance capability also examined applying “salt pepper” high proportion (75%) corrupt This work may provide promising step toward development transparent electronics optogenetics-inspired neuromorphic computing.

Язык: Английский

Процитировано

7

Silver-modified Bi2WO6 nanosheets for efficient hydrogen production via piezo-photo-catalysis DOI

Lujie Ruan,

Honglin Zhou, Xiangyu Li

и другие.

Surfaces and Interfaces, Год журнала: 2025, Номер unknown, С. 106263 - 106263

Опубликована: Март 1, 2025

Язык: Английский

Процитировано

1

Advances in Ga2O3-based memristor devices, modeling, properties, and applications for low power neuromorphic computing DOI
Rajwali Khan,

Naveed Ur Rehman,

R. Thangappan

и другие.

Nanoscale, Год журнала: 2025, Номер unknown

Опубликована: Янв. 1, 2025

Ga 2 O 3 -based memristor with low-power operation, fast switching via conductive filaments, and potential integration neuromorphic systems mimicking the human visual pathway.

Язык: Английский

Процитировано

1

Fully light-modulated memristor based on ZnO/MoOx heterojunction for neuromorphic computing DOI Open Access
Jiahui Zheng,

Yiming Du,

Yongjun Dong

и другие.

Applied Physics Letters, Год журнала: 2024, Номер 124(13)

Опубликована: Март 25, 2024

Emerging optoelectronic memristors are promising candidates to develop neuromorphic computing, owing the combined advantages of photonics and electronics. However, reversible modulation on device conductance usually requires complicated operations involving hybrid optical/electrical signals. Herein, we design a fully light-modulated memristor based ZnO/MoOx heterojunction, which exhibits potentiation depression behaviors under irradiation ultraviolet visible light, respectively. Several basic synaptic functions have been emulated by utilizing optical signals, including short-term/long-term plasticity spike-number-dependent plasticity. Based all-optical characteristics, low-level image pre-processing (including contrast enhancement noise reduction) is demonstrated. Furthermore, logic (“AND,” “NOTq,” “NIMP”) can be performed combining various signals in same device. The memristive switching mechanism stimulus attributed barrier change at heterojunction interface. This work proposes that may promote development computing with high efficiency.

Язык: Английский

Процитировано

6

Advanced Dual-Input Artificial Optical Synapse for Recognition and Generative Neural Network DOI
Zhengjun Liu, Yuxiao Fang, Zhaohui Cai

и другие.

Nano Energy, Год журнала: 2024, Номер 132, С. 110347 - 110347

Опубликована: Окт. 9, 2024

Язык: Английский

Процитировано

5

Advancements in Ga2O3-Based Heterojunction Ultraviolet Photodetectors: Types, Fabrication Techniques, and Integrated Materials for Enhancing Photoelectric Conversion Efficiency DOI
Zhu Xi, Yutong Wu, Ziwei Pan

и другие.

Journal of Alloys and Compounds, Год журнала: 2024, Номер unknown, С. 177757 - 177757

Опубликована: Ноя. 1, 2024

Язык: Английский

Процитировано

5