A novel liquid film shearing polishing technique for silicon carbide and its processing damage mechanisms

Applied Surface Science, Год журнала: 2025, Номер 688, С. 162317 - 162317

Опубликована: Янв. 7, 2025

Язык: Английский

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Optimization of Shear-Thickening Polishing Parameters for Optical Glass Based on Grey Relational Analysis

Machines, Год журнала: 2025, Номер 13(1), С. 40 - 40

Опубликована: Янв. 9, 2025

This study aimed to enhance the efficiency and surface quality of shear-thickening polishing (STP) for optical glass through optimizing parameters. Sixteen orthogonal experiments were conducted assess effects speed (V), angle (θ), slurry concentration (C) on material removal rate (MRR) roughness (Ra). Grey relational analysis simplified multi-objective optimization problem, a regression model was formulated determine optimal combination The results indicate that has most significant impact objective, followed by angle, whereas least effect. Under parameters—polishing 70 rpm, 70°, 12%—the (Ra) significantly reduced 8.23 nm during 20 min process, while reached 813.63 nm/min. Shear-thickening under optimized process parameters can effectively remove scratches from workpiece quality.

Язык: Английский

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Microwave plasma modification-assisted shear-thickening polishing of single-crystal silicon carbide

Precision Engineering, Год журнала: 2025, Номер unknown

Опубликована: Фев. 1, 2025

Язык: Английский

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Dominant parameters and mechanisms influencing the electrochemical shear-thickening polishing of 4H-SiC

Ceramics International, Год журнала: 2024, Номер unknown

Опубликована: Дек. 1, 2024

Язык: Английский

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Liquid film shearing polishing for high quality and low damage tungsten surface: Process optimization, removal mechanism, and processing defects

International Journal of Refractory Metals and Hard Materials, Год журнала: 2025, Номер unknown, С. 107189 - 107189

Опубликована: Апрель 1, 2025

Язык: Английский

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Research on application of diamond FAT for black lithium tantalate wafer processing based on nanoindentation and scratch techniques

Scientific Reports, Год журнала: 2025, Номер 15(1)

Опубликована: Фев. 13, 2025

Lithium tantalate (LiTaO3, LT) single crystal has been widely applied in the fields of electro-optical and piezoelectric devices. In this study, diamond fixed-abrasive tools (FAT) for LT were fabricated using consolidation abrasive processing technology to streamline wafers enhance overall effectiveness. The material properties critical depth ductile-to-brittle transition examined through nanoindentation scratch techniques. displacement curve exhibits significant periodic fluctuations at depths 150 nm above. load transition, as determined by quasi-static tests, was approximately 5.2 mN. Based on calculated data, actual estimated subsequently validated experiments conducted varying loads. Scanning electron microscopy (SEM) three-dimensional surface morphology analyses demonstrated that predicted values consistent with results. Furthermore, FAT developed study achieved superior roughness higher removal rate (MRR) compared free method. Surface Ra wafer processed could be reduced from 208.6 2.8 nm. Specifically, MRR 12.4 μm/h, whereas 16.3 μm/h. Additionally, results provide insights optimization parameter selection processing.

Язык: Английский

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The 40Cr surface hardening mechanism by pre-stressed dry grinding

The International Journal of Advanced Manufacturing Technology, Год журнала: 2025, Номер unknown

Опубликована: Фев. 20, 2025

Язык: Английский

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Characterization of removal mechanisms in LiTaO3 single crystals under various polishing techniques: A comparative study using nanoindentation and nanoscratch techniques

Materials Science and Engineering B, Год журнала: 2025, Номер 317, С. 118166 - 118166

Опубликована: Март 12, 2025

Язык: Английский

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Research on the Trajectory and Relative Speed of a Single-Sided Chemical Mechanical Polishing Machine

Micromachines, Год журнала: 2025, Номер 16(4), С. 450 - 450

Опубликована: Апрель 10, 2025

This study establishes a bidirectional kinematic analysis framework for single-sided chemical mechanical polishing systems through innovative coordinate transformation synergies (rotational and translational). To address three critical gaps in existing research, interaction dynamics both pad–wafer abrasive–wafer interfaces are systematically derived via 5-inch silicon wafers. Key advancements include (1) the development of closed-form trajectory equations resolving multibody tribological interactions, (2) vector-based relative velocity quantification with 17 × grid 3D visualization, (3) first-principle parametric mapping nonuniformity (NUV = 0–0.42) across 0–80 rpm operational regimes. Numerical simulations reveal two fundamental regimes: near-unity rotational speed ratios (ωP/ωC [0.95, 1) (1, 1.05]) generate optimal spiral trajectories that achieve 95% surface coverage, whereas integer multiples produce stable velocities (1.75 m/s at 60 rpm). Experimental validation demonstrated 0.3 μm/min removal rates <1 μm under optimized conditions, which was attributable to stabilization effects. The methodology exhibits inherent extensibility high-speed operations (>80 rpm) alternative configurations adaptability. work provides systematic derivation protocol abrasive analysis, visualization paradigm optimization, quantitative guidelines precision process control—advancing beyond current empirical approaches finishing technology.

Язык: Английский

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Electrochemical shear-thickening polishing of 4H-SiC (000-1): Factors influencing the anodization process

Ceramics International, Год журнала: 2025, Номер unknown

Опубликована: Апрель 1, 2025

Язык: Английский

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