Nanomaterials, Год журнала: 2024, Номер 14(20), С. 1656 - 1656
Опубликована: Окт. 16, 2024
The integration of PbS quantum dots (QDs) with graphene represents a notable advancement in enhancing the optoelectronic properties quantum-dot-based devices. This study investigated electrical transport dot (QD)/graphene heterostructures, leveraging high carrier mobility graphene. We fabricated QD/graphene/SiO
Язык: Английский
ACS Nano, Год журнала: 2024, Номер 18(23), С. 14841 - 14876
Опубликована: Май 29, 2024
Atomically thin 2D films and their van der Waals heterostructures have demonstrated immense potential for breakthroughs innovations in science technology. Integrating into electronics optoelectronics devices applications can lead to improve device efficiencies tunability. Consequently, there has been steady progress large-area both front- back-end technologies, with a keen interest optimizing different growth synthetic techniques. Parallelly, significant amount of attention directed toward efficient transfer techniques on substrates. Current methods synthesizing often involve high-temperature synthesis, precursors, stimulants highly chemical reactivity. This limitation hinders the widespread films. As result, reports concerning strategies from bare substrates target proliferated, showcasing varying degrees cleanliness, surface damage, material uniformity. review aims evaluate, discuss, provide an overview most advanced date, encompassing wet, dry, quasi-dry methods. The processes, mechanisms, pros cons each method are critically summarized. Furthermore, we discuss feasibility these film methods, various technology platforms.
Язык: Английский
Процитировано
16
Nano Letters, Год журнала: 2024, Номер 24(25), С. 7716 - 7723
Опубликована: Июнь 7, 2024
Mixed-dimensional heterostructures integrate materials of diverse dimensions with unique electronic functionalities, providing a new platform for research in electron transport and optoelectronic detection. Here, we report novel covalently bonded one-dimensional/two-dimensional (1D/2D) homojunction structure robust junction contacts, which exhibits wide-spectrum (from the visible to near-infrared regions), self-driven photodetection, polarization-sensitive photodetection capabilities. Benefiting from ultralow dark current at zero bias voltage, on/off ratio detectivity device reach 1.5 × 10
Язык: Английский
Процитировано
14
Advanced Optical Materials, Год журнала: 2024, Номер unknown
Опубликована: Дек. 26, 2024
Abstract III‐V semiconductors, known for their optoelectronic properties and versatile engineering capabilities, play a crucial role in the fabrication of Micro light‐emitting diodes (Micro‐LEDs). Recent advances research underscore that performance Micro‐LEDs can be significantly enhanced using various strategies, such as passivation distributed Bragg reflectors (DBRs), incorporation metamaterials plasmonics, integration 2D materials. By implementing these diverse based on semiconductors have demonstrated remarkably high External Quantum Efficiency (EQE) spanning orders magnitude across spectrum, from deep‐ultraviolet (DUV) to long‐wavelength infrared (LWIR) regions. In this review, main used are discussed. Additionally, an overview processes techniques relevant Micro‐LED‐based technologies is provided. Furthermore, factors influence figure merit wide range taking into account quantum efficiency, emission wavelength, electrical injection, examined. Finally, discussion highlights several applications Micro‐LEDs, provides summary, outlines future directions development semiconductors.
Язык: Английский
Процитировано
3
Inorganic Chemistry Communications, Год журнала: 2025, Номер unknown, С. 113980 - 113980
Опубликована: Янв. 1, 2025
Язык: Английский
Процитировано
0
Applied Physics Letters, Год журнала: 2025, Номер 126(8)
Опубликована: Фев. 24, 2025
Zero-dimensional/one-dimensional (0D/1D) heterojunctions have excellent potential in the field of optoelectronic devices due to synergy effect different dimensions. Most reported 0D/1D heterojunction photodetectors only focus on optimizing separation efficiency photogenerated carriers at interface. However, within quantum dots (QDs) cannot be transferred electrodes, resulting recombination separated Therefore, response speed most is still limited order seconds (s) and milliseconds (ms). In our work, we demonstrate a nanosecond (ns) scale ZnO/CuO photodetector with efficient photoelectric conversion by engineering type-II Herein, surface defect states ZnO QDs are deliberately introduced as “electrons storage pool” suppress carrier further promote separation, which has been confirmed photoluminescence (PL) time-resolved (TRPL). As result, exhibited performance ultrafast 20 ns, responsivity 213 A/W, detectivity 2.95 × 1011 Jones, respectively. This related interface provides feasible strategy for development high-performance photodetectors.
Язык: Английский
Процитировано
0
Advanced Materials Interfaces, Год журнала: 2025, Номер unknown
Опубликована: Фев. 26, 2025
Abstract 2D materials such as graphene hold significant potential for optoelectronic applications due to their unique surface properties and strong light‐matter interaction. Despite the promise, achieving high‐performance photonic devices using alone remains challenging, therefore, integrating with different dimensional semiconductors has emerged an alternative approach enhance device functionality. Here, p ‐type graphene/InAs quantum dot (QD)/ n GaAs mixed‐dimensional heterojunctions are demonstrated 1.3 µm light‐emitting diodes (LEDs) by p‐graphene ultrathin hole injection layer. These hybrid show 800 × stronger electroluminescence output powers than reference LEDs without p‐graphene. Energy band alignments at heterojunction interface also investigated measuring UV photoemission spectroscopy elucidate electrical characteristics. The novel p‐graphene/0D QD/n‐GaAs open up new ways efficient nanoscale devices.
Язык: Английский
Процитировано
0
Optical Materials, Год журнала: 2025, Номер unknown, С. 117077 - 117077
Опубликована: Апрель 1, 2025
Язык: Английский
Процитировано
0
Nanoscale, Год журнала: 2024, Номер unknown
Опубликована: Янв. 1, 2024
Achieving accurate and efficient tumor imaging is crucial in the field of treatment, as it facilitates early detection precise localization tissues, thereby informing therapeutic strategies surgical interventions. The optical technology within second near-infrared (NIR-II) window has garnered significant interest for its remarkable benefits, such enhanced tissue penetration depth, superior signal-to-background ratio (SBR), minimal autofluorescence, reduced photon attenuation, lower scattering. This review explained design optimization nano-agents responsive to NIR-II window, single-walled carbon nanotubes, quantum dots, lanthanum-based nanomaterials, noble metal nanomaterials. These enable non-invasive, deep-tissue with high spatial resolution their properties significantly improve accuracy, efficiency, versatility imaging-guided treatments. And we discussed characteristics advantages fluorescence (FL)/photoacoustic (PA) providing a comprehensive overview latest research progress different FL/PA therapy. Furthermore, exhaustively reviewed applications multifunctional nano-phototherapy technologies carried out by light including photothermal therapy (PTT), photodynamic (PDT), combined modalities like photothermal-chemodynamic (PTT-CDT), photothermal-chemotherapy (PTT-CT), photothermal- immunotherapy (PTT-IO). integrated approaches have gradually matured over past decade are expected become safe effective non-invasive treatment. Finally, outlined prospects challenges development innovation diagnosis nanoplatform. aims provide insightful perspectives future advancements treatment platforms.
Язык: Английский
Процитировано
2
Nano Letters, Год журнала: 2024, Номер 24(4), С. 1415 - 1422
Опубликована: Янв. 17, 2024
Charge and spin are two intrinsic attributes of carriers governing almost all the physical processes operation principles in materials. Here, we demonstrate manipulation electronic states designed Co-quantum dot/WS2 (Co-QDs/WS2) heterostructures by employing a metal–dielectric composite substrate via scanning tunneling microscope. By repeatedly under unipolar bias, switching bias polarity, or applying pulse through nonmagnetic magnetic tips, Co-QDs morphologies exhibit regular reproducible transformation between bright dark dots. First-principles calculations reveal that these tunable characters attributed to variation density transition anisotropy energy induced carrier accumulation. It also suggests is successful creating interfacial potential for accumulation realizes electrically controllable modulations. These results will promote exploration electron–matter interactions quantum systems provide an innovative way facilitate development spintronics.
Язык: Английский
Процитировано
1
Materials Today Communications, Год журнала: 2024, Номер 41, С. 110410 - 110410
Опубликована: Сен. 11, 2024
Язык: Английский
Процитировано
1