Low-threshold 2 µm InAs/InP quantum dash lasers enabled by punctuated growth DOI Creative Commons
Rafael Jumar Chu, Tsimafei Laryn, Dae‐Hwan Ahn

et al.

Optics Express, Journal Year: 2023, Volume and Issue: 32(2), P. 1334 - 1334

Published: Dec. 14, 2023

2 µm photonics and optoelectronics is promising for potential applications such as optical communications, LiDAR, chemical sensing. While the research on detectors rise, development of InP-based gain materials with 0D nanostructures rather stalled. Here, we demonstrate low-threshold, continuous wave lasing at wavelength from InAs quantum dash/InP lasers enabled by punctuated growth structure. We low threshold current densities 7.1 width ridge-waveguide lasers, values 657, 1183, 1944 A/cm under short pulse (SPW), quasi-continuous (QCW), operation. The also exhibited good thermal stability, a characteristic temperature T0 43 K SPW mode. spectra centered 1.97 µm, coinciding ground-state emission observed photoluminescence studies. believe that emitting near will be key enabling technology communication

Language: Английский

Transfer of 2D Films: From Imperfection to Perfection DOI Creative Commons
Phuong V. Pham, The-Hung Mai, Saroj P. Dash

et al.

ACS Nano, Journal Year: 2024, Volume and Issue: 18(23), P. 14841 - 14876

Published: May 29, 2024

Atomically thin 2D films and their van der Waals heterostructures have demonstrated immense potential for breakthroughs innovations in science technology. Integrating into electronics optoelectronics devices applications can lead to improve device efficiencies tunability. Consequently, there has been steady progress large-area both front- back-end technologies, with a keen interest optimizing different growth synthetic techniques. Parallelly, significant amount of attention directed toward efficient transfer techniques on substrates. Current methods synthesizing often involve high-temperature synthesis, precursors, stimulants highly chemical reactivity. This limitation hinders the widespread films. As result, reports concerning strategies from bare substrates target proliferated, showcasing varying degrees cleanliness, surface damage, material uniformity. review aims evaluate, discuss, provide an overview most advanced date, encompassing wet, dry, quasi-dry methods. The processes, mechanisms, pros cons each method are critically summarized. Furthermore, we discuss feasibility these film methods, various technology platforms.

Language: Английский

Citations

15
Self-Rolled-Up WSe2 One-Dimensional/Two-Dimensional Homojunctions: Enabling High-Performance Self-Powered Polarization-Sensitive Photodetectors DOI
Baihui Zhang,

Zhikang Ao,

Xiang Lan

et al.

Nano Letters, Journal Year: 2024, Volume and Issue: 24(25), P. 7716 - 7723

Published: June 7, 2024

Mixed-dimensional heterostructures integrate materials of diverse dimensions with unique electronic functionalities, providing a new platform for research in electron transport and optoelectronic detection. Here, we report novel covalently bonded one-dimensional/two-dimensional (1D/2D) homojunction structure robust junction contacts, which exhibits wide-spectrum (from the visible to near-infrared regions), self-driven photodetection, polarization-sensitive photodetection capabilities. Benefiting from ultralow dark current at zero bias voltage, on/off ratio detectivity device reach 1.5 × 10

Language: Английский

Citations

14
Advances in 2D heterostructures for quantum computing applications: A review DOI
Aminul Islam, Safiullah Khan,

Juhi Jannat Mim

et al.

Inorganic Chemistry Communications, Journal Year: 2025, Volume and Issue: unknown, P. 113980 - 113980

Published: Jan. 1, 2025

Language: Английский

Citations

0
Ultrafast 0D/1D ZnO/CuO photodetector in nanosecond scale by engineering the type-II heterostructure DOI

Yani Li,

Haiwu Zheng,

Jinhua Li

et al.

Applied Physics Letters, Journal Year: 2025, Volume and Issue: 126(8)

Published: Feb. 24, 2025

Zero-dimensional/one-dimensional (0D/1D) heterojunctions have excellent potential in the field of optoelectronic devices due to synergy effect different dimensions. Most reported 0D/1D heterojunction photodetectors only focus on optimizing separation efficiency photogenerated carriers at interface. However, within quantum dots (QDs) cannot be transferred electrodes, resulting recombination separated Therefore, response speed most is still limited order seconds (s) and milliseconds (ms). In our work, we demonstrate a nanosecond (ns) scale ZnO/CuO photodetector with efficient photoelectric conversion by engineering type-II Herein, surface defect states ZnO QDs are deliberately introduced as “electrons storage pool” suppress carrier further promote separation, which has been confirmed photoluminescence (PL) time-resolved (TRPL). As result, exhibited performance ultrafast 20 ns, responsivity 213 A/W, detectivity 2.95 × 1011 Jones, respectively. This related interface provides feasible strategy for development high-performance photodetectors.

Language: Английский

Citations

0
p‐Graphene/Quantum Dot/n‐GaAs Mixed‐Dimensional Heterostructure Junction for Ultrathin Light‐Emitting‐Diodes DOI Creative Commons
Quang Nhat Dang Lung, Rafael Jumar Chu, Eungbeom Yeon

et al.

Advanced Materials Interfaces, Journal Year: 2025, Volume and Issue: unknown

Published: Feb. 26, 2025

Abstract 2D materials such as graphene hold significant potential for optoelectronic applications due to their unique surface properties and strong light‐matter interaction. Despite the promise, achieving high‐performance photonic devices using alone remains challenging, therefore, integrating with different dimensional semiconductors has emerged an alternative approach enhance device functionality. Here, p ‐type graphene/InAs quantum dot (QD)/ n GaAs mixed‐dimensional heterojunctions are demonstrated 1.3 µm light‐emitting diodes (LEDs) by p‐graphene ultrathin hole injection layer. These hybrid show 800 × stronger electroluminescence output powers than reference LEDs without p‐graphene. Energy band alignments at heterojunction interface also investigated measuring UV photoemission spectroscopy elucidate electrical characteristics. The novel p‐graphene/0D QD/n‐GaAs open up new ways efficient nanoscale devices.

Language: Английский

Citations

0
Photoluminescence and thermal study of zinc selenide nanocrystals embedded in poly(arylene ether ketone) matrix DOI
Yinan Zhang, Jiajun Sun

Optical Materials, Journal Year: 2025, Volume and Issue: unknown, P. 117077 - 117077

Published: April 1, 2025

Language: Английский

Citations

0
Exploring Strategies for Performance Enhancement in Micro‐LEDs: a Synoptic Review of III‐V Semiconductor Technology DOI Creative Commons
Driss Mouloua, Michael C. Martin,

Miguel Beruete

et al.

Advanced Optical Materials, Journal Year: 2024, Volume and Issue: unknown

Published: Dec. 26, 2024

Abstract III‐V semiconductors, known for their optoelectronic properties and versatile engineering capabilities, play a crucial role in the fabrication of Micro light‐emitting diodes (Micro‐LEDs). Recent advances research underscore that performance Micro‐LEDs can be significantly enhanced using various strategies, such as passivation distributed Bragg reflectors (DBRs), incorporation metamaterials plasmonics, integration 2D materials. By implementing these diverse based on semiconductors have demonstrated remarkably high External Quantum Efficiency (EQE) spanning orders magnitude across spectrum, from deep‐ultraviolet (DUV) to long‐wavelength infrared (LWIR) regions. In this review, main used are discussed. Additionally, an overview processes techniques relevant Micro‐LED‐based technologies is provided. Furthermore, factors influence figure merit wide range taking into account quantum efficiency, emission wavelength, electrical injection, examined. Finally, discussion highlights several applications Micro‐LEDs, provides summary, outlines future directions development semiconductors.

Language: Английский

Citations

3
Manipulations of Electronic and Spin States in Co-Quantum Dot/WS2 Heterostructure on a Metal-Dielectric Composite Substrate by Controlling Interfacial Carriers DOI
Zongnan Zhang, Weiqing Tang, Jiajun Chen

et al.

Nano Letters, Journal Year: 2024, Volume and Issue: 24(4), P. 1415 - 1422

Published: Jan. 17, 2024

Charge and spin are two intrinsic attributes of carriers governing almost all the physical processes operation principles in materials. Here, we demonstrate manipulation electronic states designed Co-quantum dot/WS2 (Co-QDs/WS2) heterostructures by employing a metal–dielectric composite substrate via scanning tunneling microscope. By repeatedly under unipolar bias, switching bias polarity, or applying pulse through nonmagnetic magnetic tips, Co-QDs morphologies exhibit regular reproducible transformation between bright dark dots. First-principles calculations reveal that these tunable characters attributed to variation density transition anisotropy energy induced carrier accumulation. It also suggests is successful creating interfacial potential for accumulation realizes electrically controllable modulations. These results will promote exploration electron–matter interactions quantum systems provide an innovative way facilitate development spintronics.

Language: Английский

Citations

1
Effect of As4 beam equivalent pressure on the growth dynamics of InAs films grown at low temperature on graphene layers DOI
Arpana Agrawal

Materials Today Communications, Journal Year: 2024, Volume and Issue: 41, P. 110410 - 110410

Published: Sept. 11, 2024

Language: Английский

Citations

1
Engineering Photocarrier Redistributions in Graphene/III‐V Quantum Dot Mixed‐Dimensional Heterostructures for Radiative Recombination Enhancements DOI Creative Commons
Rafael Jumar Chu, Quang Nhat Dang Lung, Tsimafei Laryn

et al.

Small, Journal Year: 2024, Volume and Issue: unknown

Published: Nov. 15, 2024

Abstract Integration of graphene and quantum dots (QD) is a promising route to improved material device functionalities. Underlying the properties are alterations in carrier dynamics within graphene/QD heterostructure. In this study, it shown that functions as redistribution supply channel when integrated with InAs QDs. Photoluminescence (PL) spectroscopy provides evidence modifies redistribution, escape, recombination carriers QD ensemble, which ultimately leads enhanced radiative recombinations at all temperatures excitation densities probed. It also PL enhancement from graphene/InAs heterostructure greatest thin GaAs cap higher where devices operate. This study advances understanding heterostructures can aid design mixed‐dimensional optoelectronic devices.

Language: Английский

Citations

1