Chemical Engineering Journal, Год журнала: 2024, Номер unknown, С. 158917 - 158917
Опубликована: Дек. 1, 2024
Язык: Английский
Nano Letters, Год журнала: 2025, Номер unknown
Опубликована: Фев. 10, 2025
Polarimetric imaging and encryption improve target recognition precision information security, enhancing image sensors' perceptual acuity interference resilience. However, the miniaturization of sensing systems faces challenges due to complex integration dispersive optical components such as polarizers. To address this, we propose a polarization-sensitive photodetector using Te/ReSe2 van der Waals heterostructure. This design leverages type-II band alignment for efficient photocarrier segregation. The anisotropic crystal orientations ReSe2 Te layers integrate photon absorption with extraction, boosting functionality. device offers broad spectral photoresponse (300-965 nm), high polarization ratio 8.9, fast response time 55.4/55.7 μs at 635 nm. These properties enable high-resolution polarimetric precise processing. study provides blueprint developing miniaturized photodetectors advancing lensless optoelectronics.
Язык: Английский
Процитировано
2
Advanced Functional Materials, Год журнала: 2025, Номер unknown
Опубликована: Янв. 19, 2025
Abstract Image processing has become a quintessential data‐intensive computational task, and leveraging sensors with real‐time image been focused for the development of photodetectors. However, managing responsivity normally needs an additional gate voltage, which seriously limits application in resource‐constrained edge computing. Here, bias‐dependent photodiode (BD‐PD) semi‐gate interconnecting drain based on 2D MoS 2 /CIPS heterojunction is proposed, exhibiting ability to autonomously manage photo‐electrical characteristics without any voltage. Density functional theory validates that formation type‐I band alignment channel due bias synchronizing semi‐gate, inducing anomalous bias‐depended current dark reduced while photocurrent increased as increases. The high photodetection performances are exhibited including ultra‐high photo‐to‐dark ratio over 10 6 , detectivity 8×10 14 Jones, 3454 A W −1 at 3 V, respectively. Moreover, it demonstrated bias‐dependence BD‐PD can obviously improve preprocessing optical communication. This work provides promising platform neuromorphic optoelectronics.
Язык: Английский
Процитировано
0
ACS Applied Electronic Materials, Год журнала: 2025, Номер unknown
Опубликована: Фев. 14, 2025
Язык: Английский
Процитировано
0
Advanced Optical Materials, Год журнала: 2025, Номер unknown
Опубликована: Апрель 18, 2025
Abstract Reconfigurable photodetectors are crucial for applications such as adaptive sensing and dynamic imaging. However, conventional devices based on materials silicon typically require external electric fields additional memory units, resulting in increased system complexity energy consumption. Here, a self‐driven, reconfigurable, controllable photoresponse with large responsivity contrast of up to 100 is achieved using Ge 2 Sb Te 5 (GST)/MoS heterojunction, leveraging the integration reversible phase‐transition capability phase‐change (PCMs) nonvolatile reconfigurable optoelectronic merits two‐dimensional (2D) materials. The GST/MoS heterojunction photodetector also demonstrates fast response times, excellent cycling stability, linear photocurrent–power relationship, supporting its use real‐time imaging systems. Furthermore, 3 × array implemented an optical convolution kernel in‐sensor image processing, achieving high‐quality recognition, enhancement, edge detection. This work positions phase‐change‐2D heterojunctions promising platform next‐generation photodetection intelligent technologies.
Язык: Английский
Процитировано
0
Advanced Functional Materials, Год журнала: 2025, Номер unknown
Опубликована: Май 8, 2025
Abstract Polarization‐sensitive visual systems with adaptability enable organisms to accurately perceive the external world very even in a rapidly variable environment and efficiently process information. However, most of current polarization‐sensitive adaptive devices are based on individual materials exhibiting low performance high power consumption which hinder their practical integrated applications. In this paper, visible‐infrared broadband synaptic device PdSe 2 /WS heterojunction is proposed constructed for an artificial vision system. The shows extremely dark 0.31 nA, excellent polarization detection capability 488–1550 nm wavelengths sensitivity 10.55 under 980 nm. exhibits high‐resolution imaging, optical communication, image convolution processing capabilities. addition, it successfully simulates range behaviors PPF index 138% achieves bias voltage modulation. It noteworthy that strong brain‐like learning memory ability, realizes simulation recognition neural This work provides promising avenue design high‐performance photoelectric synapses good application prospect new generation intelligent perception systems.
Язык: Английский
Процитировано
0
Advanced Functional Materials, Год журнала: 2024, Номер unknown
Опубликована: Ноя. 5, 2024
Abstract 2D materials hold potential for developing low‐cost, high‐performance broadband polarized infrared photodetectors. However, the development of photodetectors is largely constrained by fixed bandgap spectral (cutoff wavelength) limitations available semiconductors. Here, an approach presented that leverages anisotropic interlayer excitons (IEXs) within a type‐II van der Waals heterojunction, achieving polarization photoresponse beyond intrinsic limits its constituent By constructing heterojunctions using CrPS 4 and ReS 2 , unique band alignment, enabling strong optical excitation achieved through sub‐bandgap, which lower than bandgaps both . The heterojunction exhibits responsivity 0.3 A W −1 ratio 1.3 at incident photon energy 0.8 eV, comparable to naturally with bandgaps. Additionally, IEXs demonstrated dual‐band detection introducing /CrPS /MoS distinct inte rlayer sub‐bandgaps. This flexible design offers new platform multi‐dimensional sensing on‐chip optoelectronic applications.
Язык: Английский
Процитировано
2
Small Methods, Год журнала: 2024, Номер unknown
Опубликована: Дек. 11, 2024
Abstract The continuous advancements in ultraviolet‐C (UV‐C) optoelectronics are poised to meet the growing demand for efficient and innovative optoelectronic devices, particularly image sensing neural communication. This study proposes a low‐cost tube sealing muffle calcination process catalyst‐free synthesis of polymorphic β‐Ga 2 O 3 nanomaterials. These nanomaterials synthesized via vapor‐solid (VS) growth mechanism, enabling formation high‐quality nanowires (NWs), nanobelts (NBs), nanosheets (NSs). UV‐C photodetectors (PDs) fabricated with demonstrated exceptional performance, exhibiting responsivity 4.62 × 10 5 A W −1 specific detectivity 4.78 12 Jones under 254 nm light. PD enabled high‐sensitivity high‐contrast imaging, effectively capturing letters “CNU” “Panda” pattern. Additionally, nanowire‐based synapse (OES) device displayed light significant persistent photoconductivity, accurately mimicking synaptic behaviors such as short‐term long‐term memory transitions reinforcement. OES is successfully integrated into wireless optical communication system, simulating signal transmission by outputting current waveform “CNU 1954” notable learning abilities. work not only introduces method synthesizing but also underscores their potential advanced applications, including
Язык: Английский
Процитировано
2
Wearable electronics., Год журнала: 2024, Номер unknown
Опубликована: Ноя. 1, 2024
Язык: Английский
Процитировано
1
Chemical Engineering Journal, Год журнала: 2024, Номер unknown, С. 158917 - 158917
Опубликована: Дек. 1, 2024
Язык: Английский
Процитировано
1