Bias‐Managed Photodetection Within Drain Interconnected Semi‐Gate Diode

Advanced Functional Materials, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 19, 2025

Abstract Image processing has become a quintessential data‐intensive computational task, and leveraging sensors with real‐time image been focused for the development of photodetectors. However, managing responsivity normally needs an additional gate voltage, which seriously limits application in resource‐constrained edge computing. Here, bias‐dependent photodiode (BD‐PD) semi‐gate interconnecting drain based on 2D MoS 2 /CIPS heterojunction is proposed, exhibiting ability to autonomously manage photo‐electrical characteristics without any voltage. Density functional theory validates that formation type‐I band alignment channel due bias synchronizing semi‐gate, inducing anomalous bias‐depended current dark reduced while photocurrent increased as increases. The high photodetection performances are exhibited including ultra‐high photo‐to‐dark ratio over 10 6 , detectivity 8×10 14 Jones, 3454 A W −1 at 3 V, respectively. Moreover, it demonstrated bias‐dependence BD‐PD can obviously improve preprocessing optical communication. This work provides promising platform neuromorphic optoelectronics.

Language: Английский

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Lensless Polarimetric Imaging and Encryption Enabled by Te/ReSe₂ van der Waals Heterostructure Polarization-Sensitive Photodetector

Nano Letters, Journal Year: 2025, Volume and Issue: unknown

Published: Feb. 10, 2025

Polarimetric imaging and encryption improve target recognition precision information security, enhancing image sensors' perceptual acuity interference resilience. However, the miniaturization of sensing systems faces challenges due to complex integration dispersive optical components such as polarizers. To address this, we propose a polarization-sensitive photodetector using Te/ReSe2 van der Waals heterostructure. This design leverages type-II band alignment for efficient photocarrier segregation. The anisotropic crystal orientations ReSe2 Te layers integrate photon absorption with extraction, boosting functionality. device offers broad spectral photoresponse (300-965 nm), high polarization ratio 8.9, fast response time 55.4/55.7 μs at 635 nm. These properties enable high-resolution polarimetric precise processing. study provides blueprint developing miniaturized photodetectors advancing lensless optoelectronics.

Language: Английский

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Sb₂Se₃ Microbelt/PEDOT Heterojunction for a Self-Powered Visible to Near-Infrared Photodetector with High Polarization-Sensitive Imaging

ACS Applied Electronic Materials, Journal Year: 2025, Volume and Issue: unknown

Published: Feb. 14, 2025

Language: Английский

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Reconfigurable Ge₂Sb₂Te₅/MoS₂ Heterojunction Photodetector with High‐Contrast Responsivity for Retinomorphic Vision Sensing

Advanced Optical Materials, Journal Year: 2025, Volume and Issue: unknown

Published: April 18, 2025

Abstract Reconfigurable photodetectors are crucial for applications such as adaptive sensing and dynamic imaging. However, conventional devices based on materials silicon typically require external electric fields additional memory units, resulting in increased system complexity energy consumption. Here, a self‐driven, reconfigurable, controllable photoresponse with large responsivity contrast of up to 100 is achieved using Ge 2 Sb Te 5 (GST)/MoS heterojunction, leveraging the integration reversible phase‐transition capability phase‐change (PCMs) nonvolatile reconfigurable optoelectronic merits two‐dimensional (2D) materials. The GST/MoS heterojunction photodetector also demonstrates fast response times, excellent cycling stability, linear photocurrent–power relationship, supporting its use real‐time imaging systems. Furthermore, 3 × array implemented an optical convolution kernel in‐sensor image processing, achieving high‐quality recognition, enhancement, edge detection. This work positions phase‐change‐2D heterojunctions promising platform next‐generation photodetection intelligent technologies.

Language: Английский

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Polarization‐Sensitive Momentum‐Matching Interlayer Excitons for Infrared Photodetection

Advanced Functional Materials, Journal Year: 2024, Volume and Issue: unknown

Published: Nov. 5, 2024

Abstract 2D materials hold potential for developing low‐cost, high‐performance broadband polarized infrared photodetectors. However, the development of photodetectors is largely constrained by fixed bandgap spectral (cutoff wavelength) limitations available semiconductors. Here, an approach presented that leverages anisotropic interlayer excitons (IEXs) within a type‐II van der Waals heterojunction, achieving polarization photoresponse beyond intrinsic limits its constituent By constructing heterojunctions using CrPS 4 and ReS 2 , unique band alignment, enabling strong optical excitation achieved through sub‐bandgap, which lower than bandgaps both . The heterojunction exhibits responsivity 0.3 A W −1 ratio 1.3 at incident photon energy 0.8 eV, comparable to naturally with bandgaps. Additionally, IEXs demonstrated dual‐band detection introducing /CrPS /MoS distinct inte rlayer sub‐bandgaps. This flexible design offers new platform multi‐dimensional sensing on‐chip optoelectronic applications.

Language: Английский

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Catalyst‐Free Polymorphic β‐Ga₂O₃ Nanomaterials for Solar‐Blind Optoelectronic Devices: Applications in Imaging and Neural Communication

Small Methods, Journal Year: 2024, Volume and Issue: unknown

Published: Dec. 11, 2024

Abstract The continuous advancements in ultraviolet‐C (UV‐C) optoelectronics are poised to meet the growing demand for efficient and innovative optoelectronic devices, particularly image sensing neural communication. This study proposes a low‐cost tube sealing muffle calcination process catalyst‐free synthesis of polymorphic β‐Ga 2 O 3 nanomaterials. These nanomaterials synthesized via vapor‐solid (VS) growth mechanism, enabling formation high‐quality nanowires (NWs), nanobelts (NBs), nanosheets (NSs). UV‐C photodetectors (PDs) fabricated with demonstrated exceptional performance, exhibiting responsivity 4.62 × 10 5 A W −1 specific detectivity 4.78 12 Jones under 254 nm light. PD enabled high‐sensitivity high‐contrast imaging, effectively capturing letters “CNU” “Panda” pattern. Additionally, nanowire‐based synapse (OES) device displayed light significant persistent photoconductivity, accurately mimicking synaptic behaviors such as short‐term long‐term memory transitions reinforcement. OES is successfully integrated into wireless optical communication system, simulating signal transmission by outputting current waveform “CNU 1954” notable learning abilities. work not only introduces method synthesizing but also underscores their potential advanced applications, including

Language: Английский

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Recent advancements in novel quantum 2D layered materials hybrid photodetectors from IR to THz: From principles to performance enhancement strategies

Chemical Engineering Journal, Journal Year: 2024, Volume and Issue: unknown, P. 158917 - 158917

Published: Dec. 1, 2024

Language: Английский

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Flexible polarization-sensitive photodetectors based on a NiPS3/MoTe2 heterostructure

Wearable electronics., Journal Year: 2024, Volume and Issue: unknown

Published: Nov. 1, 2024

Language: Английский

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