Oxygen plasma induced improvement of contact resistance and mobility of tellurium field-effect transistor DOI

Jinwei Hu,

B. S. Wang, Xingyun Li

и другие.

Applied Physics Letters, Год журнала: 2025, Номер 126(19)

Опубликована: Май 12, 2025

Two-dimensional tellurium (Te) has been intensely studied in recent years due to its outstanding electrical properties and excellent air stability. Simple effective contact engineering is highly desirable further improve device performance. In this work, we demonstrate a simple strategy largely the metal–Te quality by forming an ultrathin oxide layer region via O2 plasma treatment. The surface doped underlying Te layers degenerately charge transfer, establishing Ohmic between Pd electrode with negative Schottky barrier under flatband condition. This enables field-effect transistor achieve electronic performance, including record-low resistance of ∼0.16 kΩ·μm high mobility ∼1015 cm2V−1s−1 (∼3002 cm2V−1s−1) at room temperature (low temperature). simplicity CMOS compatibility treatment make it promising candidate for applications Te-based large-scale integrated circuits.

Язык: Английский

Titanium Self‐Intercalation in Titanium Diselenide Devices: Insights from In Situ Transmission Electron Microscopy DOI Creative Commons

Hsin‐Ya Sung,

Che‐Hung Wang,

Mu‐Pai Lee

и другие.

Advanced Materials, Год журнала: 2025, Номер unknown

Опубликована: Март 4, 2025

Abstract Metallic transition metal dichalcogenides (MTMDCs) are of significant attention for various electronic applications due to their anisotropic conductivity, high electron mobility, superconductivity, and charge‐density‐waves (CDW). Understanding the correlations between properties structural transformations is crucial. In this study, a bias‐induced transformation in vertical CDW‐based 1T‐TiSe 2 devices, transitioning from 1T metallic phase distorted d subsequently an orthorhombic Ti 9 Se conducting phase, reported. Using ex‐situ in‐situ biasing transmission microscopy, dynamic changes, while energy loss spectroscopy analysis revealed valence state modifications within Ti‐rich layer after biasing, observed. addition, effect varying thickness on maximum current value investigated. These observations reveal that increased requires higher voltage induce transitions. insights contribute understanding dynamics , highlighting its potential as promising material future device applications.

Язык: Английский

Процитировано

0
Mechanistic Insights into Sulfur Vacancy Engineering in Sns₂ Reram and the Role of Mos₂/Sns₂ Heterostructures DOI
Xiaomin Li,

C. Liu

Опубликована: Янв. 1, 2025

Язык: Английский

Процитировано

0
Oxygen plasma induced improvement of contact resistance and mobility of tellurium field-effect transistor DOI

Jinwei Hu,

B. S. Wang, Xingyun Li

и другие.

Applied Physics Letters, Год журнала: 2025, Номер 126(19)

Опубликована: Май 12, 2025

Two-dimensional tellurium (Te) has been intensely studied in recent years due to its outstanding electrical properties and excellent air stability. Simple effective contact engineering is highly desirable further improve device performance. In this work, we demonstrate a simple strategy largely the metal–Te quality by forming an ultrathin oxide layer region via O2 plasma treatment. The surface doped underlying Te layers degenerately charge transfer, establishing Ohmic between Pd electrode with negative Schottky barrier under flatband condition. This enables field-effect transistor achieve electronic performance, including record-low resistance of ∼0.16 kΩ·μm high mobility ∼1015 cm2V−1s−1 (∼3002 cm2V−1s−1) at room temperature (low temperature). simplicity CMOS compatibility treatment make it promising candidate for applications Te-based large-scale integrated circuits.

Язык: Английский

Процитировано

0