Mechanistic Insights into Sulfur Vacancy Engineering in Sns₂ Reram and the Role of Mos₂/Sns₂ Heterostructures DOI
Xiaomin Li,

C. Liu

Published: Jan. 1, 2025

Language: Английский

Titanium Self‐Intercalation in Titanium Diselenide Devices: Insights from In Situ Transmission Electron Microscopy DOI Creative Commons

Hsin‐Ya Sung,

Che‐Hung Wang,

Mu‐Pai Lee

et al.

Advanced Materials, Journal Year: 2025, Volume and Issue: unknown

Published: March 4, 2025

Abstract Metallic transition metal dichalcogenides (MTMDCs) are of significant attention for various electronic applications due to their anisotropic conductivity, high electron mobility, superconductivity, and charge‐density‐waves (CDW). Understanding the correlations between properties structural transformations is crucial. In this study, a bias‐induced transformation in vertical CDW‐based 1T‐TiSe 2 devices, transitioning from 1T metallic phase distorted d subsequently an orthorhombic Ti 9 Se conducting phase, reported. Using ex‐situ in‐situ biasing transmission microscopy, dynamic changes, while energy loss spectroscopy analysis revealed valence state modifications within Ti‐rich layer after biasing, observed. addition, effect varying thickness on maximum current value investigated. These observations reveal that increased requires higher voltage induce transitions. insights contribute understanding dynamics , highlighting its potential as promising material future device applications.

Language: Английский

Citations

0

Mechanistic Insights into Sulfur Vacancy Engineering in Sns₂ Reram and the Role of Mos₂/Sns₂ Heterostructures DOI
Xiaomin Li,

C. Liu

Published: Jan. 1, 2025

Language: Английский

Citations

0