Photodual‐Responsive Anthracene‐Based 2D Covalent Organic Framework for Optoelectronic Synaptic Devices DOI
Lei Zhao, Yang Gao, Xin Fu

и другие.

Small Methods, Год журнала: 2024, Номер unknown

Опубликована: Окт. 31, 2024

Abstract To facilitate the development of efficient neuromorphic perception and computation, it is crucial to explore optoelectronic synaptic devices that integrate perceptual computational capabilities. Various materials such as oxide semiconductors, conjugated organic polymers, transition metal sulfides, perovskite materials, nanoparticles, along with their composites, are utilized in constructing these devices. However, based on 2D covalent frameworks (COFs) rarely reported. In this study, an anthracene‐based COF (COF‐DaTp) film prepared using a room‐temperature interface‐confined strategy active layer device Al/COF‐DaTp/ITO configuration. The demonstrated dual modulation, exhibiting significant resistive switching response light pulses, achieving 32 photoconductive states. Moreover, exhibited history‐dependent memristive behavior voltage scans electrical comparable diversity conductive photodual‐responsive properties COF‐DaTp‐based enable simultaneously perform optical sensing basic image denoising recognition tasks, significantly enhancing accuracy reducing number training epochs compared datasets without noise mitigation. This work opens door for application COF‐based visual processing.

Язык: Английский

Operating Mechanism Principles and Advancements for Halide Perovskite-Based Memristors and Neuromorphic Devices DOI Creative Commons
Soyeon Kim, Heyi Zhang, Jenifer Rubio‐Magnieto

и другие.

The Journal of Physical Chemistry Letters, Год журнала: 2024, Номер unknown, С. 10087 - 10103

Опубликована: Сен. 27, 2024

With the advent of generation artificial intelligence (AI) based on big data-processing technologies, next-generation memristor and memristive neuromorphic devices have been actively studied with great interest to overcome von Neumann bottleneck limits. Among various candidates, halide perovskites (HPs) in spotlight as potential candidates for these due their unique switching characteristics low energy consumption flexible integration compatibility across sources scalability. We outline operating principles HP-based memristors devices. explain filamentary- interface-type according type conducting pathway occurring inside active HP layer mechanisms depending species that make up this pathway. summarize types current changes beneficial device applications finally organize suggested analysis tools physical models enable experimental determination from perspectives.

Язык: Английский

Процитировано

10

An Au25 nanocluster/MoS2 vdWaals heterojunction phototransistor for chromamorphic visual-afterimage emulation DOI
Zhuohui Huang, Chuan‐Jia Tong, Yanbo Zhao

и другие.

Nanoscale, Год журнала: 2024, Номер 16(36), С. 17064 - 17078

Опубликована: Янв. 1, 2024

An Au 25 nanocluster/2D-MoS 2 vdWaals heterojunction phototransistor achieves intriguing chromamorphic functions through a color spatiotemporal coupling approach, providing fascinating opportunity for artificial visual perception systems.

Язык: Английский

Процитировано

5

2D and Quasi-2D Hybrid Halide Perovskite Single Crystals: From Fundamentals to Functionalized Photodetectors DOI
Yurou Zhang,

EQ Han,

Bo Wei Zhang

и другие.

Nano Energy, Год журнала: 2024, Номер 132, С. 110368 - 110368

Опубликована: Окт. 18, 2024

Язык: Английский

Процитировано

3

Photosensitive resistive switching in parylene-PbTe nanocomposite memristors for neuromorphic computing DOI
Andrey Trofimov, A. V. Emelyanov, А. Н. Мацукатова

и другие.

Nanoscale, Год журнала: 2025, Номер unknown

Опубликована: Янв. 1, 2025

Reliable parylene–PbTe memristors controlled via electrical and optical stimuli replicate key synaptic functions are applicable in neuromorphic computing systems.

Язык: Английский

Процитировано

0

Microstructure-modulated conductive filaments in Ruddlesden-Popper perovskite-based memristors and their application in artificial synapses DOI
Fu-Chiao Wu, Zhicheng Su, Yu‐Chieh Hsu

и другие.

Materials Today Physics, Год журнала: 2025, Номер unknown, С. 101708 - 101708

Опубликована: Март 1, 2025

Язык: Английский

Процитировано

0

Synaptic solar-blind UV PD based on STO/AlXGa1−XN heterostructure for neuromorphic computing DOI
Qi Xu, Shiting Dai, Chunshuang Chu

и другие.

Applied Physics Letters, Год журнала: 2025, Номер 126(14)

Опубликована: Апрель 1, 2025

The rapid advancements in artificial intelligence and high-performance computing have emphasized the need for efficient optoelectronic synapses, essential elements neuromorphic computing. This study proposes a solar-blind ultraviolet (UV) photodetector (PD) based on SrTiO3/AlXGa1−XN heterostructure to serve as an synapse. Under 265 nm illumination, device demonstrates remarkably low dark current of 1.08 × 10−11 A impressive peak responsivity 36.43 A/W at −15 V. Notably, UV PD functions synapse that emulates biological neuron, simulating fundamental operations various synapses. Moreover, research extends promising field photoelectric achieved exceptional 97.91% accuracy rate challenging MNIST handwritten digit recognition task, further validating its potential neural applications.

Язык: Английский

Процитировано

0

A Review of Current Progress in Perovskite-Based Energy Storage to Photorechargeable Systems DOI
Tanuj Kumar, Mahesh Kumar, Arun Kumar

и другие.

Energy & Fuels, Год журнала: 2025, Номер unknown

Опубликована: Апрель 7, 2025

Язык: Английский

Процитировано

0

MoS2-based transistor with asymmetric Schottky contacts for self-powered broadband photodetection and visual synapse DOI
Xianjun Zhang, Hangyu Li, Peiwen Song

и другие.

Applied Physics Letters, Год журнала: 2025, Номер 126(19)

Опубликована: Май 12, 2025

The Schottky interface in metal–semiconductor contacts significantly affects and even dominates the performance of semiconductor devices. Therefore, accurately characterizing regulating barrier at is great research significance. In this report, Au/MoS2/Ag transistor fabricated by using an asymmetric electrode configuration. Under 405 nm light illumination, a maximum photocurrent density 7.7 mA/cm2 observed, on/off ratio reaches 6.31 × 104. For incident wavelengths 660, 808, 1064, 1550 nm, measured values are 2.44, 0.044, 0.015, 5.6 10−4 mA/cm2, respectively. Moreover, under bias voltage, exhibits dynamic properties similar to visual synapses including paired-pulse facilitation, short-term plasticity, long-term plasticity pulses. irradiation, power consumption per spike energy as low 0.31 pW 7.22 pJ, Evidently, possesses significant development potential presents promising prospects broadband detection artificial systems.

Язык: Английский

Процитировано

0

Low Energy Consumption and Stable Perovskite-based Photonic Synapse with Two-terminal Lateral Configuration DOI
Fei Liu, Xiangyang Zhang, Agnes Valencia

и другие.

Nano Energy, Год журнала: 2025, Номер unknown, С. 111145 - 111145

Опубликована: Май 1, 2025

Язык: Английский

Процитировано

0

人工突触和光磁神经网络的研究进展(特邀) DOI

林基伟 Lin Jiwei,

陈杰威 Chen Jiewei,

李丽华 Li Lihua

и другие.

Chinese Journal of Lasers, Год журнала: 2025, Номер 52(9), С. 0907303 - 0907303

Опубликована: Янв. 1, 2025

Процитировано

0