Small Methods,
Journal Year:
2024,
Volume and Issue:
unknown
Published: Oct. 31, 2024
Abstract
To
facilitate
the
development
of
efficient
neuromorphic
perception
and
computation,
it
is
crucial
to
explore
optoelectronic
synaptic
devices
that
integrate
perceptual
computational
capabilities.
Various
materials
such
as
oxide
semiconductors,
conjugated
organic
polymers,
transition
metal
sulfides,
perovskite
materials,
nanoparticles,
along
with
their
composites,
are
utilized
in
constructing
these
devices.
However,
based
on
2D
covalent
frameworks
(COFs)
rarely
reported.
In
this
study,
an
anthracene‐based
COF
(COF‐DaTp)
film
prepared
using
a
room‐temperature
interface‐confined
strategy
active
layer
device
Al/COF‐DaTp/ITO
configuration.
The
demonstrated
dual
modulation,
exhibiting
significant
resistive
switching
response
light
pulses,
achieving
32
photoconductive
states.
Moreover,
exhibited
history‐dependent
memristive
behavior
voltage
scans
electrical
comparable
diversity
conductive
photodual‐responsive
properties
COF‐DaTp‐based
enable
simultaneously
perform
optical
sensing
basic
image
denoising
recognition
tasks,
significantly
enhancing
accuracy
reducing
number
training
epochs
compared
datasets
without
noise
mitigation.
This
work
opens
door
for
application
COF‐based
visual
processing.
The Journal of Physical Chemistry Letters,
Journal Year:
2024,
Volume and Issue:
unknown, P. 10087 - 10103
Published: Sept. 27, 2024
With
the
advent
of
generation
artificial
intelligence
(AI)
based
on
big
data-processing
technologies,
next-generation
memristor
and
memristive
neuromorphic
devices
have
been
actively
studied
with
great
interest
to
overcome
von
Neumann
bottleneck
limits.
Among
various
candidates,
halide
perovskites
(HPs)
in
spotlight
as
potential
candidates
for
these
due
their
unique
switching
characteristics
low
energy
consumption
flexible
integration
compatibility
across
sources
scalability.
We
outline
operating
principles
HP-based
memristors
devices.
explain
filamentary-
interface-type
according
type
conducting
pathway
occurring
inside
active
HP
layer
mechanisms
depending
species
that
make
up
this
pathway.
summarize
types
current
changes
beneficial
device
applications
finally
organize
suggested
analysis
tools
physical
models
enable
experimental
determination
from
perspectives.
Nanoscale,
Journal Year:
2024,
Volume and Issue:
16(36), P. 17064 - 17078
Published: Jan. 1, 2024
An
Au
25
nanocluster/2D-MoS
2
vdWaals
heterojunction
phototransistor
achieves
intriguing
chromamorphic
functions
through
a
color
spatiotemporal
coupling
approach,
providing
fascinating
opportunity
for
artificial
visual
perception
systems.
Nanoscale,
Journal Year:
2025,
Volume and Issue:
unknown
Published: Jan. 1, 2025
Reliable
parylene–PbTe
memristors
controlled
via
electrical
and
optical
stimuli
replicate
key
synaptic
functions
are
applicable
in
neuromorphic
computing
systems.
Applied Physics Letters,
Journal Year:
2025,
Volume and Issue:
126(14)
Published: April 1, 2025
The
rapid
advancements
in
artificial
intelligence
and
high-performance
computing
have
emphasized
the
need
for
efficient
optoelectronic
synapses,
essential
elements
neuromorphic
computing.
This
study
proposes
a
solar-blind
ultraviolet
(UV)
photodetector
(PD)
based
on
SrTiO3/AlXGa1−XN
heterostructure
to
serve
as
an
synapse.
Under
265
nm
illumination,
device
demonstrates
remarkably
low
dark
current
of
1.08
×
10−11
A
impressive
peak
responsivity
36.43
A/W
at
−15
V.
Notably,
UV
PD
functions
synapse
that
emulates
biological
neuron,
simulating
fundamental
operations
various
synapses.
Moreover,
research
extends
promising
field
photoelectric
achieved
exceptional
97.91%
accuracy
rate
challenging
MNIST
handwritten
digit
recognition
task,
further
validating
its
potential
neural
applications.
Applied Physics Letters,
Journal Year:
2025,
Volume and Issue:
126(19)
Published: May 12, 2025
The
Schottky
interface
in
metal–semiconductor
contacts
significantly
affects
and
even
dominates
the
performance
of
semiconductor
devices.
Therefore,
accurately
characterizing
regulating
barrier
at
is
great
research
significance.
In
this
report,
Au/MoS2/Ag
transistor
fabricated
by
using
an
asymmetric
electrode
configuration.
Under
405
nm
light
illumination,
a
maximum
photocurrent
density
7.7
mA/cm2
observed,
on/off
ratio
reaches
6.31
×
104.
For
incident
wavelengths
660,
808,
1064,
1550
nm,
measured
values
are
2.44,
0.044,
0.015,
5.6
10−4
mA/cm2,
respectively.
Moreover,
under
bias
voltage,
exhibits
dynamic
properties
similar
to
visual
synapses
including
paired-pulse
facilitation,
short-term
plasticity,
long-term
plasticity
pulses.
irradiation,
power
consumption
per
spike
energy
as
low
0.31
pW
7.22
pJ,
Evidently,
possesses
significant
development
potential
presents
promising
prospects
broadband
detection
artificial
systems.
