CogniFiber: Harnessing Biocompatible and Biodegradable 1D Collagen Nanofibers for Sustainable Nonvolatile Memory and Synaptic Learning Applications

Advanced Materials, Год журнала: 2024, Номер 36(24)

Опубликована: Март 19, 2024

Here, resistive switching (RS) devices are fabricated using naturally abundant, nontoxic, biocompatible, and biodegradable biomaterials. For this purpose, 1D chitosan nanofibers (NFs), collagen NFs, chitosan-collagen NFs synthesized by an electrospinning technique. Among different the collagen-NFs-based device shows promising RS characteristics. In particular, optimized Ag/collagen NFs/fluorine-doped tin oxide a voltage-tunable analog memory behavior good nonvolatile properties. Moreover, it can also mimic various biological synaptic learning properties be used for pattern classification applications with help of spiking neural network. The time series analysis technique is employed to model predict variations device. have shown cytotoxicity anticancer properties, suggesting excellent biocompatibility as layer. explored NRK-52E (Normal Rat Kidney cell line) MCF-7 (Michigan Cancer Foundation-7 cancer line). Additionally, biodegradability evaluated through physical transient test. This work provides vital step toward developing biocompatible material sustainable neuromorphic computing applications.

Язык: Английский

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Nanoscale memristor devices: materials, fabrication, and artificial intelligence

Journal of Materials Chemistry C, Год журнала: 2024, Номер 12(11), С. 3770 - 3810

Опубликована: Янв. 1, 2024

An overview of fabrication methods, including CMOS, nanojoining, and 3D printing techniques, materials, structures, properties, mechanisms, applications memristors, as well the most recent advancements in molecular is provided.

Язык: Английский

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A High‐Stability Pressure‐Sensitive Implantable Memristor for Pulmonary Hypertension Monitoring

Advanced Materials, Год журнала: 2024, Номер unknown

Опубликована: Ноя. 12, 2024

Pulmonary hypertension (PH) significantly affects the quality of life and lifespan humans has promoted development flexible implantable electronic devices for PH diagnosis prevention. Traditional based on von Neumann architecture face insurmountable challenges in processing large amounts biological data due to computational bottlenecks. Memristors, with integrated in-memory sensing computing capabilities, can effectively eliminate bottlenecks become one most promising products health monitoring. Here, a memristor Ag/MnO

Язык: Английский

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Forming-less flexible memristor crossbar array for neuromorphic computing applications produced using low-temperature atomic layer deposition

Applied Materials Today, Год журнала: 2024, Номер 38, С. 102204 - 102204

Опубликована: Апрель 25, 2024

Язык: Английский

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Brain-inspired computing systems: a systematic literature review

The European Physical Journal B, Год журнала: 2024, Номер 97(6)

Опубликована: Июнь 1, 2024

Abstract Brain-inspired computing is a growing and interdisciplinary area of research that investigates how the computational principles biological brain can be translated into hardware design to achieve improved energy efficiency. encompasses various subfields, including neuromorphic in-memory computing, have been shown outperform traditional digital in executing specific tasks. With rising demand for more powerful yet energy-efficient large-scale artificial neural networks , brain-inspired emerging as promising solution enabling expanding AI edge. However, vast scope field has made it challenging compare assess effectiveness solutions compared state-of-the-art counterparts. This systematic literature review provides comprehensive overview latest advances hardware. To ensure accessibility researchers from diverse backgrounds, we begin by introducing key concepts pointing out respective in-depth topical reviews. We continue with categorizing dominant platforms. highlight studies potential applications could greatly benefit systems their reported accuracy. Finally, fair comparison performance different approaches, employ standardized normalization approach efficiency reports literature. Graphical abstract

Язык: Английский

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Flexible Memristors for Implantable Applications

ACS Applied Nano Materials, Год журнала: 2025, Номер unknown

Опубликована: Янв. 27, 2025

Язык: Английский

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A reversible implantable memristor for health monitoring applications

Materials Today Bio, Год журнала: 2024, Номер 26, С. 101096 - 101096

Опубликована: Май 20, 2024

Conventional implantable electronics based on von Neumann architectures encounter significant limitations in computing and processing vast biological information due to computational bottlenecks. The memristor with integrated memory-computing low power consumption offer a promising solution overcome the bottleneck Moore's law of traditional silicon-based devices, making them most candidates for next-generation devices. In this work, highly stable an Ag/BaTiO3/MnO2/FTO structure was fabricated, demonstrating retention characteristics exceeding 1200 cycles endurance above 1000 s. device successfully exhibited three-stage responses signals after implantation SD (Sprague-Dawley) rats. Importantly, perform remarkable reversibility, maintaining over 100 repetition even extraction from rat. This study provides new perspective biomedical application memristors, expanding potential memristive devices intelligent medical fields such as health monitoring auxiliary diagnostics.

Язык: Английский

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Nitrogen-induced filament confinement strategy for implementing reliable resistive switching performance in a-HfOx memristors

Applied Physics Letters, Год журнала: 2025, Номер 126(1)

Опубликована: Янв. 6, 2025

Hafnium oxide (HfOx) films are highly valued as functional layers in nonvolatile resistive switching (RS) memristors due to their scalability, compatibility with CMOS technology, and high dielectric constant. However, the low reliability of HfOx-based is key factor hindering widespread practical applications. Herein, amorphous HfOx (a-HfOx) used construct memristors, nitrogen treatment strategy employed enhance characteristics. All fabricated Al/a-HfOx/ITO demonstrate bipolar digital RS behaviors, specifically, 500 °C-treated a-HfOx device exhibits reliable performance, including cycle-to-cycle variability, concentrated distributions operating voltages, long-term retention capacity (>104 s), good cycle endurance (>200 cycles). The mechanisms physical models for enhanced performance thoroughly elucidated, revealing that formation stable oxygen vacancy–dinitrogen complexes confines conductive filament path significantly reduces randomness during rupture. This work renders an effective material engineering widening a toward designing data storage devices striking performances.

Язык: Английский

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An innovative biomimetic technology: Memristors mimic human sensation

Nano Energy, Год журнала: 2025, Номер unknown, С. 110698 - 110698

Опубликована: Янв. 1, 2025

Язык: Английский

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Multilevel resistive switching in hydrothermally synthesized FeWO4 thin film-based memristive device for non-volatile memory application

Journal of Colloid and Interface Science, Год журнала: 2024, Номер 669, С. 444 - 457

Опубликована: Май 5, 2024

Язык: Английский

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