High-Dielectric-Constant MgZrO₃ by Spray Pyrolysis for Thin-Fim Transistors in Low-Power Electronics

ACS Applied Electronic Materials, Год журнала: 2025, Номер unknown

Опубликована: Фев. 4, 2025

Язык: Английский

---

Integrated Opto-Synaptic IGZO Transistors for Image Recognition Fabricated at Room Temperature

ACS Photonics, Год журнала: 2025, Номер unknown

Опубликована: Апрель 5, 2025

Язык: Английский

---

High Mobility and Excellent Stability of Solution-Processed Heterojunction-Channel IGO/AIGO TFT

ACS Applied Electronic Materials, Год журнала: 2025, Номер unknown

Опубликована: Апрель 7, 2025

Язык: Английский

---

Effects of different contents yttrium doping on the electrical performance and stability of bilayer IZO/IYZO thin-film transistors

Applied Physics Letters, Год журнала: 2025, Номер 126(14)

Опубликована: Апрель 1, 2025

In this study, the effects of doping with different contents rare-earth element yttrium (Y) on electrical performance indium zinc oxide (IZO) and bilayer IZO/IYZO thin-film transistors (TFTs) were investigated. Through a rational design, TFT exhibits best Vth 0.2 V μFE 32.6 cm2/V s. X-ray photoelectron spectroscopy band structure analysis demonstrated that, in TFT, 6-nm highly conductive ultrathin IZO provided free electrons electron transfer from layer to IYZO formation bending, thus increased carrier mobility devices. addition, 20-nm-thick controlled Ne by forming potential barrier (0.38 eV), thereby increasing stability. Moreover, experimental characterization revealed that Y can reduce concentration, oxygen vacancies, surface defects, other trap densities Therefore, stability small shifts −0.9, 0.8, −1.1, 1.0 under negative gate bias stress, positive light illumination stress measurements. Overall, designed TFTs open effective pathways for achieving high-performance TFTs.

Язык: Английский

---

Solution-Processed High-k BaTiO₃ Nanocrystal Ultrathin Films as Insulators for Thin Film Transistors

ACS Applied Electronic Materials, Год журнала: 2025, Номер unknown

Опубликована: Май 21, 2025

Язык: Английский

---

An investigation into the rationally designed GaN:ZnO/NiTe2 composites for photocatalytic hydrogen generation under both simulated and natural solar light

Materials Chemistry and Physics, Год журнала: 2025, Номер unknown, С. 131084 - 131084

Опубликована: Май 1, 2025

Язык: Английский

---

High-Performance Oxide Semiconductor Tft with In-Rich A-Igzo/A-Igzo Heterostructure Using Quantum Confinement Effects: Enhancing Mobility and Reliability

Опубликована: Янв. 1, 2024

Язык: Английский

---