High-Performance Oxide Semiconductor Tft with In-Rich A-Igzo/A-Igzo Heterostructure Using Quantum Confinement Effects: Enhancing Mobility and Reliability DOI
Taeyoon Lee, Seung-Min Lee,

Jinhan Lee

et al.

Published: Jan. 1, 2024

Language: Английский

High-Dielectric-Constant MgZrO3 by Spray Pyrolysis for Thin-Fim Transistors in Low-Power Electronics DOI
Jewel Kumer Saha, Samiran Roy, Jin Jang

et al.

ACS Applied Electronic Materials, Journal Year: 2025, Volume and Issue: unknown

Published: Feb. 4, 2025

Language: Английский

Citations

3
Integrated Opto-Synaptic IGZO Transistors for Image Recognition Fabricated at Room Temperature DOI

Shu Ming Qi,

Jia Cheng Li,

Yudong Xia

et al.

ACS Photonics, Journal Year: 2025, Volume and Issue: unknown

Published: April 5, 2025

Language: Английский

Citations

0
Effects of different contents yttrium doping on the electrical performance and stability of bilayer IZO/IYZO thin-film transistors DOI

Xiaocheng Ma,

Ablat Abliz, Da Wan

et al.

Applied Physics Letters, Journal Year: 2025, Volume and Issue: 126(14)

Published: April 1, 2025

In this study, the effects of doping with different contents rare-earth element yttrium (Y) on electrical performance indium zinc oxide (IZO) and bilayer IZO/IYZO thin-film transistors (TFTs) were investigated. Through a rational design, TFT exhibits best Vth 0.2 V μFE 32.6 cm2/V s. X-ray photoelectron spectroscopy band structure analysis demonstrated that, in TFT, 6-nm highly conductive ultrathin IZO provided free electrons electron transfer from layer to IYZO formation bending, thus increased carrier mobility devices. addition, 20-nm-thick controlled Ne by forming potential barrier (0.38 eV), thereby increasing stability. Moreover, experimental characterization revealed that Y can reduce concentration, oxygen vacancies, surface defects, other trap densities Therefore, stability small shifts −0.9, 0.8, −1.1, 1.0 under negative gate bias stress, positive light illumination stress measurements. Overall, designed TFTs open effective pathways for achieving high-performance TFTs.

Language: Английский

Citations

0
Solution-Processed High-k BaTiO3 Nanocrystal Ultrathin Films as Insulators for Thin Film Transistors DOI

Haowei Li,

Dinghao Ma,

Mengxin Liu

et al.

ACS Applied Electronic Materials, Journal Year: 2025, Volume and Issue: unknown

Published: May 21, 2025

Language: Английский

Citations

0
High Mobility and Excellent Stability of Solution-Processed Heterojunction-Channel IGO/AIGO TFT DOI

Zhonghua Gui,

Kefeng Zou,

Meng Xu

et al.

ACS Applied Electronic Materials, Journal Year: 2025, Volume and Issue: unknown

Published: April 7, 2025

Language: Английский

Citations

0
High-Performance Oxide Semiconductor Tft with In-Rich A-Igzo/A-Igzo Heterostructure Using Quantum Confinement Effects: Enhancing Mobility and Reliability DOI
Taeyoon Lee, Seung-Min Lee,

Jinhan Lee

et al.

Published: Jan. 1, 2024

Language: Английский

Citations

0