Progress in Crystal Growth and Characterization of Materials, Год журнала: 2024, Номер 71(1), С. 100658 - 100658
Опубликована: Дек. 21, 2024
Язык: Английский
Applied Physics Express, Год журнала: 2024, Номер 17(9), С. 090101 - 090101
Опубликована: Авг. 5, 2024
Abstract This review describes the progress of research on gallium oxide as a material for power devices, covering development bulk crystal growth through to epitaxial growth, defect evaluations, device processes, and development, all based author’s experiences. During last decade or so, epi-wafer size has been expanded 4–6 inches, Schottky barrier diodes field-effect transistors capable ampere-class operations with breakdown voltages several kV have demonstrated. On other hand, challenges practical application such cost epi-wafers, killer defects, purity layer, etc., also become apparent. paper provides comprehensive summary history these developments, including not only papers but patents conference presentations, gives my personal views prospects this material’s continued development.
Язык: Английский
Процитировано
22
Materials Today, Год журнала: 2025, Номер unknown
Опубликована: Янв. 1, 2025
Язык: Английский
Процитировано
2
Applied Physics Letters, Год журнала: 2024, Номер 125(14)
Опубликована: Сен. 30, 2024
Polarization-sensitive photodetection has promising prospects for civilian and military applications based on anisotropic semiconductors. However, it is greatly limited due to the lack of valid materials as well terrible linear dichroism ratio. In this Letter, a metal–oxide–semiconductor β-Ga2O3 with strong property proposed highly efficient polarizing detection, which can potentially overcome these limitations. Angle-resolved polarization Raman spectroscopy was performed confirm excellent phonon vibration. Unique narrow solar-blind polarization-sensitive photo-absorption (240–270 nm) be observed, attributed natural anisotropy, referring in particular polarization-resolved absorption surround bandgap β-Ga2O3. Benefiting from structural photodetector exhibits an dichroic ratio ∼1.8. Moreover, obvious color change observed under different polarized angles, providing great potential imaging. With advantages, we anticipated that research will pave avenues fabrication UV photodetectors.
Язык: Английский
Процитировано
4
ACS Applied Electronic Materials, Год журнала: 2025, Номер 7(5), С. 1829 - 1841
Опубликована: Фев. 17, 2025
The peculiarities of radiative and nonradiative processes associated with self-trapped intrinsic eXcitons in the excited β-Ga2O3 crystals are studied via time-resolved techniques induced absorption, transient grating, photoluminescence (PL) at room temperature. excitation above bandgap is produced by laser pulses linear light polarization parallel orthogonal (−201) (001) planes. We elucidate that recombination rate occurring eXciton prevails over its emission a wide range free carrier concentration composed equilibrium electrons. Hence, has no effect on strong anisotropy shape band. However, we find out conventional ABC model electron effective lifetime insufficient for explanation dependences. Inclusion two Auger mechanisms modified formula provides excellent agreement these conclude trap-assisted process proportion to density coefficient B = 1.1 × 10–11 cm3/s appears low/intermediate excitation, while triple-particle Δn2 C 8 10–30 cm6/s high conditions. transition between accompanied rise diffusivity preferred crystallographic directions where PL intensity maximal. diffusion length LD can reach values ∼300 nm, but, excitations, becomes limited lifetimes. These findings pave way implementation into specific optoelectronic devices.
Язык: Английский
Процитировано
0
Crystal Research and Technology, Год журнала: 2025, Номер unknown
Опубликована: Апрель 1, 2025
Abstract β‐Ga 2 O 3 is a promising wide band gap material for power device and solar‐blind photodector applications. With continuous contribution to the crystal growth of , it important conclude progress techniques remaining problems materials propel next generation industry. The size single crystals becomes larger, quality epitaxial films gradually improved, performance devices has become better. an oxide semiconductor with large bandgap width 4.7–4.9 eV high breakdown electric field ≈8 MV cm −1 . In this review, structure, thermal properties, optical electronic properties are introduced first. Then, methods bulk introduced, including Verneuil method, Czochralski (CZ) optical‐floating zone (OFZ) edge‐defined film‐fed (EFG) vertical Bridgman (VB) casting from cold crucible (OCCC) method. Crystal mechanisms their respective advantages disadvantages discussed. effects doping elements on have been highlighted in each Finally, prospect
Язык: Английский
Процитировано
0
Nanomaterials, Год журнала: 2024, Номер 15(1), С. 7 - 7
Опубликована: Дек. 25, 2024
This study reveals the significant role of pre-melting process in growing high-quality (100) β-Ga2O3 single crystals from 4N powder (99.995% purity) using edge-defined film-fed growth (EFG) method. Among various bulk melt methods, EFG method boasts a fast rate and capability multiple simultaneously, thus offering high productivity. The notably enhanced structural, optical, electrical properties by effectively eliminating impurities such as Si Fe. Specifically, employing 100% CO2 atmosphere during proved to be highly effective, reducing impurity concentrations carrier scattering, which resulted decreased concentration an increased electron mobility grown Ga2O3 crystals. These results demonstrate that is crucial technique for substantially improving crystal quality, thereby promising better performance β-Ga2O3-based device applications.
Язык: Английский
Процитировано
2
Progress in Crystal Growth and Characterization of Materials, Год журнала: 2024, Номер 71(1), С. 100658 - 100658
Опубликована: Дек. 21, 2024
Язык: Английский
Процитировано
0