Prospects for β-Ga2O3: now and into the future
Applied Physics Express,
Год журнала:
2024,
Номер
17(9), С. 090101 - 090101
Опубликована: Авг. 5, 2024
Abstract
This
review
describes
the
progress
of
research
on
gallium
oxide
as
a
material
for
power
devices,
covering
development
bulk
crystal
growth
through
to
epitaxial
growth,
defect
evaluations,
device
processes,
and
development,
all
based
author’s
experiences.
During
last
decade
or
so,
epi-wafer
size
has
been
expanded
4–6
inches,
Schottky
barrier
diodes
field-effect
transistors
capable
ampere-class
operations
with
breakdown
voltages
several
kV
have
demonstrated.
On
other
hand,
challenges
practical
application
such
cost
epi-wafers,
killer
defects,
purity
layer,
etc.,
also
become
apparent.
paper
provides
comprehensive
summary
history
these
developments,
including
not
only
papers
but
patents
conference
presentations,
gives
my
personal
views
prospects
this
material’s
continued
development.
Язык: Английский
Rutile germanium dioxide: An emerging ultrawide bandgap semiconductor for power device applications – A review
Madani Labed,
Ho Jung Jeon,
Jang Hyeok Park
и другие.
Materials Today,
Год журнала:
2025,
Номер
unknown
Опубликована: Янв. 1, 2025
Язык: Английский
Angle-resolved polarization Raman spectroscopy of β-Ga2O3 and their application in sensitive solar-blind photodetection
Applied Physics Letters,
Год журнала:
2024,
Номер
125(14)
Опубликована: Сен. 30, 2024
Polarization-sensitive
photodetection
has
promising
prospects
for
civilian
and
military
applications
based
on
anisotropic
semiconductors.
However,
it
is
greatly
limited
due
to
the
lack
of
valid
materials
as
well
terrible
linear
dichroism
ratio.
In
this
Letter,
a
metal–oxide–semiconductor
β-Ga2O3
with
strong
property
proposed
highly
efficient
polarizing
detection,
which
can
potentially
overcome
these
limitations.
Angle-resolved
polarization
Raman
spectroscopy
was
performed
confirm
excellent
phonon
vibration.
Unique
narrow
solar-blind
polarization-sensitive
photo-absorption
(240–270
nm)
be
observed,
attributed
natural
anisotropy,
referring
in
particular
polarization-resolved
absorption
surround
bandgap
β-Ga2O3.
Benefiting
from
structural
photodetector
exhibits
an
dichroic
ratio
∼1.8.
Moreover,
obvious
color
change
observed
under
different
polarized
angles,
providing
great
potential
imaging.
With
advantages,
we
anticipated
that
research
will
pave
avenues
fabrication
UV
photodetectors.
Язык: Английский
Self-Trapped-Exciton Radiative Recombination in β–Ga2O3: Impact of Two Concurrent Nonradiative Auger Processes
ACS Applied Electronic Materials,
Год журнала:
2025,
Номер
7(5), С. 1829 - 1841
Опубликована: Фев. 17, 2025
The
peculiarities
of
radiative
and
nonradiative
processes
associated
with
self-trapped
intrinsic
eXcitons
in
the
excited
β-Ga2O3
crystals
are
studied
via
time-resolved
techniques
induced
absorption,
transient
grating,
photoluminescence
(PL)
at
room
temperature.
excitation
above
bandgap
is
produced
by
laser
pulses
linear
light
polarization
parallel
orthogonal
(−201)
(001)
planes.
We
elucidate
that
recombination
rate
occurring
eXciton
prevails
over
its
emission
a
wide
range
free
carrier
concentration
composed
equilibrium
electrons.
Hence,
has
no
effect
on
strong
anisotropy
shape
band.
However,
we
find
out
conventional
ABC
model
electron
effective
lifetime
insufficient
for
explanation
dependences.
Inclusion
two
Auger
mechanisms
modified
formula
provides
excellent
agreement
these
conclude
trap-assisted
process
proportion
to
density
coefficient
B
=
1.1
×
10–11
cm3/s
appears
low/intermediate
excitation,
while
triple-particle
Δn2
C
8
10–30
cm6/s
high
conditions.
transition
between
accompanied
rise
diffusivity
preferred
crystallographic
directions
where
PL
intensity
maximal.
diffusion
length
LD
can
reach
values
∼300
nm,
but,
excitations,
becomes
limited
lifetimes.
These
findings
pave
way
implementation
into
specific
optoelectronic
devices.
Язык: Английский
Research Progress and Prospect of the Bulk Single Crystal Growth of β‐Ga2O3: from 1964 to 2024
Crystal Research and Technology,
Год журнала:
2025,
Номер
unknown
Опубликована: Апрель 1, 2025
Abstract
β‐Ga
2
O
3
is
a
promising
wide
band
gap
material
for
power
device
and
solar‐blind
photodector
applications.
With
continuous
contribution
to
the
crystal
growth
of
,
it
important
conclude
progress
techniques
remaining
problems
materials
propel
next
generation
industry.
The
size
single
crystals
becomes
larger,
quality
epitaxial
films
gradually
improved,
performance
devices
has
become
better.
an
oxide
semiconductor
with
large
bandgap
width
4.7–4.9
eV
high
breakdown
electric
field
≈8
MV
cm
−1
.
In
this
review,
structure,
thermal
properties,
optical
electronic
properties
are
introduced
first.
Then,
methods
bulk
introduced,
including
Verneuil
method,
Czochralski
(CZ)
optical‐floating
zone
(OFZ)
edge‐defined
film‐fed
(EFG)
vertical
Bridgman
(VB)
casting
from
cold
crucible
(OCCC)
method.
Crystal
mechanisms
their
respective
advantages
disadvantages
discussed.
effects
doping
elements
on
have
been
highlighted
in
each
Finally,
prospect
Язык: Английский
Morphology features of β-Ga2O3 bulk crystals by EFG and CZ methods: A review
Progress in Crystal Growth and Characterization of Materials,
Год журнала:
2024,
Номер
71(1), С. 100658 - 100658
Опубликована: Дек. 21, 2024
Язык: Английский
Pre-Melting-Assisted Impurity Control of β-Ga2O3 Single Crystals in Edge-Defined Film-Fed Growth
Nanomaterials,
Год журнала:
2024,
Номер
15(1), С. 7 - 7
Опубликована: Дек. 25, 2024
This
study
reveals
the
significant
role
of
pre-melting
process
in
growing
high-quality
(100)
β-Ga2O3
single
crystals
from
4N
powder
(99.995%
purity)
using
edge-defined
film-fed
growth
(EFG)
method.
Among
various
bulk
melt
methods,
EFG
method
boasts
a
fast
rate
and
capability
multiple
simultaneously,
thus
offering
high
productivity.
The
notably
enhanced
structural,
optical,
electrical
properties
by
effectively
eliminating
impurities
such
as
Si
Fe.
Specifically,
employing
100%
CO2
atmosphere
during
proved
to
be
highly
effective,
reducing
impurity
concentrations
carrier
scattering,
which
resulted
decreased
concentration
an
increased
electron
mobility
grown
Ga2O3
crystals.
These
results
demonstrate
that
is
crucial
technique
for
substantially
improving
crystal
quality,
thereby
promising
better
performance
β-Ga2O3-based
device
applications.
Язык: Английский