Pre-Melting-Assisted Impurity Control of β-Ga2O3 Single Crystals in Edge-Defined Film-Fed Growth DOI Creative Commons
Aesun Shin, T. Gu,

Yun‐Ji Shin

и другие.

Nanomaterials, Год журнала: 2024, Номер 15(1), С. 7 - 7

Опубликована: Дек. 25, 2024

This study reveals the significant role of pre-melting process in growing high-quality (100) β-Ga2O3 single crystals from 4N powder (99.995% purity) using edge-defined film-fed growth (EFG) method. Among various bulk melt methods, EFG method boasts a fast rate and capability multiple simultaneously, thus offering high productivity. The notably enhanced structural, optical, electrical properties by effectively eliminating impurities such as Si Fe. Specifically, employing 100% CO2 atmosphere during proved to be highly effective, reducing impurity concentrations carrier scattering, which resulted decreased concentration an increased electron mobility grown Ga2O3 crystals. These results demonstrate that is crucial technique for substantially improving crystal quality, thereby promising better performance β-Ga2O3-based device applications.

Язык: Английский

Prospects for β-Ga2O3: now and into the future DOI Creative Commons
Kohei Sasaki

Applied Physics Express, Год журнала: 2024, Номер 17(9), С. 090101 - 090101

Опубликована: Авг. 5, 2024

Abstract This review describes the progress of research on gallium oxide as a material for power devices, covering development bulk crystal growth through to epitaxial growth, defect evaluations, device processes, and development, all based author’s experiences. During last decade or so, epi-wafer size has been expanded 4–6 inches, Schottky barrier diodes field-effect transistors capable ampere-class operations with breakdown voltages several kV have demonstrated. On other hand, challenges practical application such cost epi-wafers, killer defects, purity layer, etc., also become apparent. paper provides comprehensive summary history these developments, including not only papers but patents conference presentations, gives my personal views prospects this material’s continued development.

Язык: Английский

Процитировано

20
Rutile germanium dioxide: An emerging ultrawide bandgap semiconductor for power device applications – A review DOI

Madani Labed,

Ho Jung Jeon,

Jang Hyeok Park

и другие.

Materials Today, Год журнала: 2025, Номер unknown

Опубликована: Янв. 1, 2025

Язык: Английский

Процитировано

2
Angle-resolved polarization Raman spectroscopy of β-Ga2O3 and their application in sensitive solar-blind photodetection DOI
Lei Li, Sihan Yan, Wanyu Ma

и другие.

Applied Physics Letters, Год журнала: 2024, Номер 125(14)

Опубликована: Сен. 30, 2024

Polarization-sensitive photodetection has promising prospects for civilian and military applications based on anisotropic semiconductors. However, it is greatly limited due to the lack of valid materials as well terrible linear dichroism ratio. In this Letter, a metal–oxide–semiconductor β-Ga2O3 with strong property proposed highly efficient polarizing detection, which can potentially overcome these limitations. Angle-resolved polarization Raman spectroscopy was performed confirm excellent phonon vibration. Unique narrow solar-blind polarization-sensitive photo-absorption (240–270 nm) be observed, attributed natural anisotropy, referring in particular polarization-resolved absorption surround bandgap β-Ga2O3. Benefiting from structural photodetector exhibits an dichroic ratio ∼1.8. Moreover, obvious color change observed under different polarized angles, providing great potential imaging. With advantages, we anticipated that research will pave avenues fabrication UV photodetectors.

Язык: Английский

Процитировано

3
Self-Trapped-Exciton Radiative Recombination in β–Ga2O3: Impact of Two Concurrent Nonradiative Auger Processes DOI Creative Commons
V. Grivickas, Patrik Ščajev, S. Miasojedovas

и другие.

ACS Applied Electronic Materials, Год журнала: 2025, Номер 7(5), С. 1829 - 1841

Опубликована: Фев. 17, 2025

The peculiarities of radiative and nonradiative processes associated with self-trapped intrinsic eXcitons in the excited β-Ga2O3 crystals are studied via time-resolved techniques induced absorption, transient grating, photoluminescence (PL) at room temperature. excitation above bandgap is produced by laser pulses linear light polarization parallel orthogonal (−201) (001) planes. We elucidate that recombination rate occurring eXciton prevails over its emission a wide range free carrier concentration composed equilibrium electrons. Hence, has no effect on strong anisotropy shape band. However, we find out conventional ABC model electron effective lifetime insufficient for explanation dependences. Inclusion two Auger mechanisms modified formula provides excellent agreement these conclude trap-assisted process proportion to density coefficient B = 1.1 × 10–11 cm3/s appears low/intermediate excitation, while triple-particle Δn2 C 8 10–30 cm6/s high conditions. transition between accompanied rise diffusivity preferred crystallographic directions where PL intensity maximal. diffusion length LD can reach values ∼300 nm, but, excitations, becomes limited lifetimes. These findings pave way implementation into specific optoelectronic devices.

Язык: Английский

Процитировано

0
Research Progress and Prospect of the Bulk Single Crystal Growth of β‐Ga2O3: from 1964 to 2024 DOI

Xueyi Wang,

Xi Chang,

Ping Wang

и другие.

Crystal Research and Technology, Год журнала: 2025, Номер unknown

Опубликована: Апрель 1, 2025

Abstract β‐Ga 2 O 3 is a promising wide band gap material for power device and solar‐blind photodector applications. With continuous contribution to the crystal growth of , it important conclude progress techniques remaining problems materials propel next generation industry. The size single crystals becomes larger, quality epitaxial films gradually improved, performance devices has become better. an oxide semiconductor with large bandgap width 4.7–4.9 eV high breakdown electric field ≈8 MV cm −1 . In this review, structure, thermal properties, optical electronic properties are introduced first. Then, methods bulk introduced, including Verneuil method, Czochralski (CZ) optical‐floating zone (OFZ) edge‐defined film‐fed (EFG) vertical Bridgman (VB) casting from cold crucible (OCCC) method. Crystal mechanisms their respective advantages disadvantages discussed. effects doping elements on have been highlighted in each Finally, prospect

Язык: Английский

Процитировано

0
Morphology features of β-Ga2O3 bulk crystals by EFG and CZ methods: A review DOI
Man Xu,

Zining Wang,

Rui Wang

и другие.

Progress in Crystal Growth and Characterization of Materials, Год журнала: 2024, Номер 71(1), С. 100658 - 100658

Опубликована: Дек. 21, 2024

Язык: Английский

Процитировано

0
Pre-Melting-Assisted Impurity Control of β-Ga2O3 Single Crystals in Edge-Defined Film-Fed Growth DOI Creative Commons
Aesun Shin, T. Gu,

Yun‐Ji Shin

и другие.

Nanomaterials, Год журнала: 2024, Номер 15(1), С. 7 - 7

Опубликована: Дек. 25, 2024

This study reveals the significant role of pre-melting process in growing high-quality (100) β-Ga2O3 single crystals from 4N powder (99.995% purity) using edge-defined film-fed growth (EFG) method. Among various bulk melt methods, EFG method boasts a fast rate and capability multiple simultaneously, thus offering high productivity. The notably enhanced structural, optical, electrical properties by effectively eliminating impurities such as Si Fe. Specifically, employing 100% CO2 atmosphere during proved to be highly effective, reducing impurity concentrations carrier scattering, which resulted decreased concentration an increased electron mobility grown Ga2O3 crystals. These results demonstrate that is crucial technique for substantially improving crystal quality, thereby promising better performance β-Ga2O3-based device applications.

Язык: Английский

Процитировано

0