Advanced Materials,
Год журнала:
2024,
Номер
unknown
Опубликована: Ноя. 20, 2024
Abstract
The
electrochemical
metallization
(ECM)
mechanism
is
emerging
as
a
promising
approach
for
the
development
of
optical
memristors—nonvolatile
memory
systems
proposed
use
artificial
synapses
in
neuromorphic
computing
applications.
ECM
memristors
offer
exceptional
operating
dynamics
and
power
efficiency
compared
to
other
systems,
but
challenges
with
reproducible
cycle‐to‐cycle
state
switching
absence
advanced
functionalities
hinder
their
integration
into
photonic
systems.
In
this
work,
an
free‐standing
memristor
structure
proposed,
which
simultaneously
offers
wavelength‐dependent
multilevel
nonvolatile
storage,
volatile
light
modulation,
dynamic
polarization
control.
It
demonstrated
that
presence
resonance,
readout
provides
noise‐free,
robust,
significantly
more
accurate
information
about
memristor's
than
electrical
measurement.
allows
gain
insight
intermediate
levels
device
it
transitions
between
high
low
resistance
states
recover
complete
record
applied
voltages
even
when
stochastic
filament
ruptures
occur.
Finally,
investigations
show
spectroscopic
ellipsometry
real‐time
on
cation
movement
corresponding
permittivity
changes
at
interfaces
layer
electrodes,
thus
becoming
complementary
characterization
method
alongside
state‐of‐the‐art
techniques.
Applied Physics Letters,
Год журнала:
2024,
Номер
125(19)
Опубликована: Ноя. 4, 2024
In
recent
years,
memristors
have
garnered
significant
attention,
particularly
those
based
on
the
oxygen
vacancy-driven
filamentary
conduction
mechanism.
However,
studies
utilizing
single-crystal
materials
for
remain
scarce.
This
study
investigates
memristive
effect
of
Se-implanted
β-Ga2O3
material,
fabricated
through
ion
implantation.
X-ray
photoelectron
spectroscopy
and
depth
profiling
revealed
that
Se
doping
significantly
increased
concentration
vacancies,
crucial
resistive
switching
(RS).
Electrical
testing
demonstrated
stable
repeatable
behavior,
attributed
to
mechanism
driven
by
vacancies.
These
findings
highlight
potential
implantation
tuning
surface
properties
Ga2O3-based
memristors,
advancing
their
application
in
next-generation
electronic
devices.
Journal of Laser Applications,
Год журнала:
2024,
Номер
36(2)
Опубликована: Апрель 10, 2024
Memristor-based
logic
circuits
are
gaining
a
lot
of
attention
due
to
the
potential
for
high
density
hardware
and
novel
in-memory
computing
applications.
Readily
available
methods
fabricating
memristor
structures
that
suitable
integration
with
conventional
computer
growing
need.
This
work
presents
direct
laser
writing
process
capable
rapidly
by
irradiation
metal
salt
precursor
solutions.
Planar
patterns
fabricated,
their
I–V
response
is
characterized.
Boolean
gates
fabricated
from
planar
pairs
exhibit
low
programming
voltages
rapid
switching.
Cu/Cu2O/Cu
Ag/Cu2O/Cu
memristors
also
in
crossbar
arrays,
showing
ability
be
programmed
multiple
resistance
states
through
ultrashort
voltage
pulses.
The
devices
show
have
endurance
nonvolatile
state
retention.
Materials Advances,
Год журнала:
2024,
Номер
5(16), С. 6388 - 6398
Опубликована: Янв. 1, 2024
Poly[
N
-(3-(9
H
-carbazol-9-yl)propyl)methacrylamide]
film
sandwiched
between
ITO
and
Au
electrodes
is
able
to
mimic
synaptic
plasticity
as
a
fundamental
behaviour
of
neuronal
synapses.
Advanced Physics Research,
Год журнала:
2024,
Номер
unknown
Опубликована: Окт. 28, 2024
Abstract
Neuromorphic
computing
has
emerged
as
a
key
solution
for
overcoming
the
challenge
of
von
Neumann
bottleneck,
offering
pathway
to
more
efficient
and
biologically
inspired
systems.
A
crucial
advancement
in
this
field
is
utilization
Mott
insulators,
where
metal‐insulator
transition
(MIT)
elicits
substantial
alterations
material
properties,
infusing
renewed
vigor
into
progression
neuromorphic
This
review
begins
by
explaining
MIT
mechanisms
preparation
processes
followed
an
introduction
memristors
memristor
arrays,
showing
different
types
multidimensional
integration
styles.
The
applications
are
then
discussed,
which
include
artificial
synapse
designs
various
neuron
architectures
sensory
recognition
logic
calculation.
Finally,
facing
challenges
potential
future
directions
outlined
utilizing
computing.
aims
provide
thorough
understanding
latest
advancements
their
applications,
comprehensive
reference
further
research
related
areas,
contributing
bridging
gap
between
traditional
silicon‐based
electronics
brain‐inspired
architectures.
Advanced Materials,
Год журнала:
2024,
Номер
unknown
Опубликована: Ноя. 20, 2024
Abstract
The
electrochemical
metallization
(ECM)
mechanism
is
emerging
as
a
promising
approach
for
the
development
of
optical
memristors—nonvolatile
memory
systems
proposed
use
artificial
synapses
in
neuromorphic
computing
applications.
ECM
memristors
offer
exceptional
operating
dynamics
and
power
efficiency
compared
to
other
systems,
but
challenges
with
reproducible
cycle‐to‐cycle
state
switching
absence
advanced
functionalities
hinder
their
integration
into
photonic
systems.
In
this
work,
an
free‐standing
memristor
structure
proposed,
which
simultaneously
offers
wavelength‐dependent
multilevel
nonvolatile
storage,
volatile
light
modulation,
dynamic
polarization
control.
It
demonstrated
that
presence
resonance,
readout
provides
noise‐free,
robust,
significantly
more
accurate
information
about
memristor's
than
electrical
measurement.
allows
gain
insight
intermediate
levels
device
it
transitions
between
high
low
resistance
states
recover
complete
record
applied
voltages
even
when
stochastic
filament
ruptures
occur.
Finally,
investigations
show
spectroscopic
ellipsometry
real‐time
on
cation
movement
corresponding
permittivity
changes
at
interfaces
layer
electrodes,
thus
becoming
complementary
characterization
method
alongside
state‐of‐the‐art
techniques.
