Artificial synapses based on CIPS/Te vdW heterojunction ferroelectric transistor for traffic light recognition DOI
Zhimin Wang, Fei Li, Yiming Zhao

и другие.

Applied Physics Letters, Год журнала: 2025, Номер 126(21)

Опубликована: Май 26, 2025

Neuromorphic computing is a key technology for simulating brain function and plays crucial role in the next-generation computing, offering potential solution to challenges posed by von Neumann bottleneck. Tellurium (Te) CuInP2S6 (CIPS), as two-dimensional (2D) materials with excellent properties, have been widely used advanced electronics optoelectronics. However, combination of stable ferroelectricity CIPS high current characteristics Te, which both electrical optical stimuli can modulate, offers great addressing complex application scenarios, yet this type 2D van der Waals (vdW) device has largely unexplored. In study, we developed an optoelectronic neuromorphic based on exhibits fundamental synaptic behaviors response stimulation demonstrates different responses under light varying wavelengths. Additionally, constructed RC system address problem traffic recognition. system, ferroelectric modulation voltage enables short-term depression (STD) simulate human braking behavior dangerous signals. This approach effectively enhances capabilities intelligent systems signals, significant potential.

Язык: Английский

Polarization-controlled contact barriers enable giant tunneling electroresistance in van der Waals ferroelectric tunnel junctions DOI

Xueyan Bai,

Daifeng Zou, Chihou Lei

и другие.

Applied Physics Letters, Год журнала: 2025, Номер 126(16)

Опубликована: Апрель 21, 2025

The regulation of tunneling electroresistance (TER) in two-dimensional (2D) ferroelectric tunnel junctions (FTJs) is crucial for their practical applications. In this Letter, we introduce an innovative approach to manipulate TER by altering the interfacial contact barrier through polarization-induced modifications interface transport properties. A comprehensive analysis electronic structures within heterostructures, consisting a metallic TaSe2 monolayer and Sc2CO2 layer, uncovers dual modulation effect ferroelectricity on both Schottky height barrier. This phenomenon substantiates influence polarization charge carrier across interface. Through calculations employing non-equilibrium Green's function method, reveal significant ratio (2.41×1013%) TaSe2/Sc2CO2-based FTJs. Our findings illustrate that distinct resistance states can be achieved reversal, as predicted proposed mechanism. These insights enhance understanding polarization-mediated 2D FTJs provide foundation design next-generation devices leveraging materials.

Язык: Английский

Процитировано

0

Artificial synapses based on CIPS/Te vdW heterojunction ferroelectric transistor for traffic light recognition DOI
Zhimin Wang, Fei Li, Yiming Zhao

и другие.

Applied Physics Letters, Год журнала: 2025, Номер 126(21)

Опубликована: Май 26, 2025

Neuromorphic computing is a key technology for simulating brain function and plays crucial role in the next-generation computing, offering potential solution to challenges posed by von Neumann bottleneck. Tellurium (Te) CuInP2S6 (CIPS), as two-dimensional (2D) materials with excellent properties, have been widely used advanced electronics optoelectronics. However, combination of stable ferroelectricity CIPS high current characteristics Te, which both electrical optical stimuli can modulate, offers great addressing complex application scenarios, yet this type 2D van der Waals (vdW) device has largely unexplored. In study, we developed an optoelectronic neuromorphic based on exhibits fundamental synaptic behaviors response stimulation demonstrates different responses under light varying wavelengths. Additionally, constructed RC system address problem traffic recognition. system, ferroelectric modulation voltage enables short-term depression (STD) simulate human braking behavior dangerous signals. This approach effectively enhances capabilities intelligent systems signals, significant potential.

Язык: Английский

Процитировано

0