Polarization-controlled contact barriers enable giant tunneling electroresistance in van der Waals ferroelectric tunnel junctions
Applied Physics Letters,
Год журнала:
2025,
Номер
126(16)
Опубликована: Апрель 21, 2025
The
regulation
of
tunneling
electroresistance
(TER)
in
two-dimensional
(2D)
ferroelectric
tunnel
junctions
(FTJs)
is
crucial
for
their
practical
applications.
In
this
Letter,
we
introduce
an
innovative
approach
to
manipulate
TER
by
altering
the
interfacial
contact
barrier
through
polarization-induced
modifications
interface
transport
properties.
A
comprehensive
analysis
electronic
structures
within
heterostructures,
consisting
a
metallic
TaSe2
monolayer
and
Sc2CO2
layer,
uncovers
dual
modulation
effect
ferroelectricity
on
both
Schottky
height
barrier.
This
phenomenon
substantiates
influence
polarization
charge
carrier
across
interface.
Through
calculations
employing
non-equilibrium
Green's
function
method,
reveal
significant
ratio
(2.41×1013%)
TaSe2/Sc2CO2-based
FTJs.
Our
findings
illustrate
that
distinct
resistance
states
can
be
achieved
reversal,
as
predicted
proposed
mechanism.
These
insights
enhance
understanding
polarization-mediated
2D
FTJs
provide
foundation
design
next-generation
devices
leveraging
materials.
Язык: Английский
Artificial synapses based on CIPS/Te vdW heterojunction ferroelectric transistor for traffic light recognition
Applied Physics Letters,
Год журнала:
2025,
Номер
126(21)
Опубликована: Май 26, 2025
Neuromorphic
computing
is
a
key
technology
for
simulating
brain
function
and
plays
crucial
role
in
the
next-generation
computing,
offering
potential
solution
to
challenges
posed
by
von
Neumann
bottleneck.
Tellurium
(Te)
CuInP2S6
(CIPS),
as
two-dimensional
(2D)
materials
with
excellent
properties,
have
been
widely
used
advanced
electronics
optoelectronics.
However,
combination
of
stable
ferroelectricity
CIPS
high
current
characteristics
Te,
which
both
electrical
optical
stimuli
can
modulate,
offers
great
addressing
complex
application
scenarios,
yet
this
type
2D
van
der
Waals
(vdW)
device
has
largely
unexplored.
In
study,
we
developed
an
optoelectronic
neuromorphic
based
on
exhibits
fundamental
synaptic
behaviors
response
stimulation
demonstrates
different
responses
under
light
varying
wavelengths.
Additionally,
constructed
RC
system
address
problem
traffic
recognition.
system,
ferroelectric
modulation
voltage
enables
short-term
depression
(STD)
simulate
human
braking
behavior
dangerous
signals.
This
approach
effectively
enhances
capabilities
intelligent
systems
signals,
significant
potential.
Язык: Английский