Polarization-controlled contact barriers enable giant tunneling electroresistance in van der Waals ferroelectric tunnel junctions DOI

Xueyan Bai,

Daifeng Zou, Chihou Lei

et al.

Applied Physics Letters, Journal Year: 2025, Volume and Issue: 126(16)

Published: April 21, 2025

The regulation of tunneling electroresistance (TER) in two-dimensional (2D) ferroelectric tunnel junctions (FTJs) is crucial for their practical applications. In this Letter, we introduce an innovative approach to manipulate TER by altering the interfacial contact barrier through polarization-induced modifications interface transport properties. A comprehensive analysis electronic structures within heterostructures, consisting a metallic TaSe2 monolayer and Sc2CO2 layer, uncovers dual modulation effect ferroelectricity on both Schottky height barrier. This phenomenon substantiates influence polarization charge carrier across interface. Through calculations employing non-equilibrium Green's function method, reveal significant ratio (2.41×1013%) TaSe2/Sc2CO2-based FTJs. Our findings illustrate that distinct resistance states can be achieved reversal, as predicted proposed mechanism. These insights enhance understanding polarization-mediated 2D FTJs provide foundation design next-generation devices leveraging materials.

Language: Английский

Polarization-controlled contact barriers enable giant tunneling electroresistance in van der Waals ferroelectric tunnel junctions DOI

Xueyan Bai,

Daifeng Zou, Chihou Lei

et al.

Applied Physics Letters, Journal Year: 2025, Volume and Issue: 126(16)

Published: April 21, 2025

The regulation of tunneling electroresistance (TER) in two-dimensional (2D) ferroelectric tunnel junctions (FTJs) is crucial for their practical applications. In this Letter, we introduce an innovative approach to manipulate TER by altering the interfacial contact barrier through polarization-induced modifications interface transport properties. A comprehensive analysis electronic structures within heterostructures, consisting a metallic TaSe2 monolayer and Sc2CO2 layer, uncovers dual modulation effect ferroelectricity on both Schottky height barrier. This phenomenon substantiates influence polarization charge carrier across interface. Through calculations employing non-equilibrium Green's function method, reveal significant ratio (2.41×1013%) TaSe2/Sc2CO2-based FTJs. Our findings illustrate that distinct resistance states can be achieved reversal, as predicted proposed mechanism. These insights enhance understanding polarization-mediated 2D FTJs provide foundation design next-generation devices leveraging materials.

Language: Английский

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