Research Square (Research Square), Год журнала: 2025, Номер unknown
Опубликована: Апрель 14, 2025
Язык: Английский
Research Square (Research Square), Год журнала: 2025, Номер unknown
Опубликована: Апрель 14, 2025
Язык: Английский
Advanced Materials, Год журнала: 2025, Номер unknown
Опубликована: Янв. 31, 2025
Abstract SnTe‐based thermoelectric materials have attracted significant attention for their exceptional performance in mid‐to‐high temperature ranges, positioning them as promising candidates power generation. However, efficiency is constrained by challenges related to electronic structure, defect chemistry, and phonon behavior. This review comprehensively summarizes advancements SnTe devices over the past five years, focusing on strategies address these limitations. Key approaches include regulation, carrier transport optimization, engineering enhance electrical conductivity, reduce thermal improve overall conversion efficiency. The highlights breakthroughs fabrication methods, doping alloying, composite designs, development of novel nanostructures, with particular emphasis 2D such monolayers, bilayers, thin films, which offer new opportunities enhancement. Additionally, it provides an overview devices, covering techniques, stability, flexible device development. Despite progress, remain developing n‐type materials, optimizing interfaces, ensuring long‐term maximizing fills gaps existing literature offers valuable insights guidance future research aimed at improving properties, advancing integration, driving commercial viability practical applications.
Язык: Английский
Процитировано
4Energy Conversion and Management, Год журнала: 2025, Номер 332, С. 119621 - 119621
Опубликована: Март 13, 2025
Язык: Английский
Процитировано
3Nature Communications, Год журнала: 2025, Номер 16(1)
Опубликована: Фев. 12, 2025
The debate over the optimal orientation of Ag2Se thin films and its influence on thermoelectric performance remains ongoing. Here, we report a wet-chemical selenization-based anisotropy optimization technique to control in-plane film, steering it away from (002) nearly parallel planes that hinder charge carrier mobility. This approach enables us achieve an impressive power factor 30.8 μW cm−1 K−2 at 343 K. as-fabricated film demonstrates remarkable durability, retaining 90% after six months air exposure, outstanding flexibility, with variation staying within 5% 2000 bending cycles 5 mm radius. These attributes are attributed controlled thickness, crystallinity, strong adhesion polyimide substrate. Additionally, as-assembled slotted device delivers output 0.58 competitive density 807 cm−2 temperature difference 20 K, alongside high normalized 1.8 K−2, highlighting potential for practical application. study provides valuable insights into design high-performance, highly flexible real-world applications. authors achieving in device.
Язык: Английский
Процитировано
2Advanced Materials, Год журнала: 2025, Номер unknown
Опубликована: Фев. 16, 2025
Abstract The unique structure of carbon nanotubes (CNTs) endows them with exceptional electrical and mechanical properties, along a high surface area, making highly beneficial for use as flexible, high‐performing thermoelectric materials. As result, the application CNTs in field has become increasingly widespread. Considering rapid advancements this field, review offers timely overview most recent progress on CNT‐based materials devices over past five years. This begins by introducing fundamental concepts mechanisms Then new strategies are explored to enhance their performance, focusing doping composites, while emphasizing importance CNT stability key research area. Additionally, latest design expanded scenarios flexible wearable CNTs‐based summarized. Finally, current challenges addressed future directions development discussed.
Язык: Английский
Процитировано
2Advanced Functional Materials, Год журнала: 2025, Номер unknown
Опубликована: Март 11, 2025
Abstract Rhombohedral GeSe has attracted extensive attention due to its facile fabrication, low toxicity, and greater affordability compared with popular GeTe‐based thermoelectrics. However, thermoelectric properties require further optimization for practical applications. Here, a peak figure‐of‐merit of 1.31 at 623 K is reported p‐type polycrystalline (GeSe) 0.9 (AgBiTe 2 ) 0.1 ‐1.5 mol.% SnSe, ranking among the highest values. AgBiTe alloying induces phase transition in from orthorhombic rhombohedral while compositing which known thermal conductivity, establishes interfaces strong phonon scattering weak electron scattering. This strategy effectively suppresses transport maintaining exceptional electrical properties. Structural analyses reveal that multiscale defects, including intensive point defects (Ag Ge , Bi Te Se ), linear (dislocation arrays), planar (grain boundaries boundaries), volume (SnSe Ag phases), result an ultra‐low lattice conductivity 0.26 W m −1 K, approaching amorphous limit. Density functional theory calculations nanostructure characterizations indicate bonding between SnSe matrix, coupled minimal electronegativity difference Sn Ge, minimizes carrier sustains high performance.
Язык: Английский
Процитировано
2Nature Communications, Год журнала: 2025, Номер 16(1)
Опубликована: Март 14, 2025
Wearable thermoelectric devices, capable of converting body heat into electrical energy, provide the potential driving power for Internet Things, artificial intelligence, and soft robotics. However, critical parameters have long been overlooked these practical applications. Here, we report a three-dimensional flexible device with structure featuring an inner rigid outer woven design. Such includes numerous small static air pockets that create stable out-of-plane temperature difference, enabling precise signal detection (accuracy up to 0.02 K). Particularly, this exhibits excellent multi-signal decoupling capability, elasticity (>10,000 compression cycles), ultra-fast response (20 ms), output under 50% compressive strain, high breathability (1300 mm s−1), washability. All metrics achieve highest values currently reported, fully meeting requirements moisture exchange, as demonstrated in our designed integrated smart mask glove systems based on vector machine learning technology. This work shows has broad applicability wearable electronics. devices are promising, though fabricating breathable, sensitive, washable challenge. fabric, incorporating layers, devices.
Язык: Английский
Процитировано
2Chemical Engineering Journal, Год журнала: 2025, Номер unknown, С. 160219 - 160219
Опубликована: Фев. 1, 2025
Язык: Английский
Процитировано
1Advanced Materials, Год журнала: 2025, Номер unknown
Опубликована: Фев. 26, 2025
Abstract Beyond its role in cultural communication, printing technology has emerged as one of the most important approaches to distributing and patterning functional materials for advanced manufacturing. In a process, stamp is employed transfer inks target surface, generating specific pattern that exactly replicates stamp. Through precise manipulation different inkdrops, herein, “one stamp, diverse patterns” strategy developed achieves deposition varied patterns utilizing single This features patterned surface energy, achieved through regioselective energy injection treatment an ultralow solid. It revealed with tensions can selectively exhibit Cassie or Wenzel state on generate ink distributions, which enables distinct surfaces. Leveraging this approach, flexible light‐emitting devices high‐density transistor array are successfully printed using stamps. These findings advance understanding finely tuning liquid offer leap forward efficient versatile methodology will boost innovative integration simplified manner.
Язык: Английский
Процитировано
1Nature Communications, Год журнала: 2025, Номер 16(1)
Опубликована: Янв. 14, 2025
Here, we design exotic interfaces within a flexible thermoelectric device, incorporating polyimide substrate, Ti contact layer, Cu electrode, barrier and thin film. The device features 162 pairs of thin-film legs with high room-temperature performance, using p-Bi0.5Sb1.5Te3 n-Bi2Te2.7Se0.3, figure-of-merit values 1.39 1.44, respectively. 10 nm layer creates strong bond between the substrate while significantly reduces internal resistance enhances tightness films electrodes. This enables both exceptional flexibility an impressive power density 108 μW cm−2 under temperature difference just 5 K, normalized exceeding 4 K−2. When attached to 50 °C irregular heat source, three series-connected devices generate 1.85 V, powering light-emitting diode without need for additional sink or booster. authors introduce nanoscale titanium layers boost (p-Bi0.5Sb1.5Te3/n-Bi2Te2.7Se0.3), achieving >4 K−2 offering good flexibility.
Язык: Английский
Процитировано
1Nano Energy, Год журнала: 2025, Номер unknown, С. 110836 - 110836
Опубликована: Март 1, 2025
Язык: Английский
Процитировано
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