Abnormal Response of Indirect Excitons to Non‐Uniform Elastic Strain in MoS2 Flakes DOI

Xinxin Yue,

Lifu Zhang, Xiang Chen

и другие.

Advanced Optical Materials, Год журнала: 2024, Номер unknown

Опубликована: Окт. 15, 2024

Abstract Regulating the electronic structures and carrier dynamics in 2D materials via elastic strain is a fascinating avenue for tailoring their optoelectronic properties at atomic scale. Here, abnormal response of indirect excitons to non‐uniform MoS 2 flakes reported. The introduced by transferring them pre‐prepared convex cross on SiO /Si substrate, where topography distribution are determined force microscopy Raman spectroscopy, respectively. It observed that emission energy shows an unexpected blue‐shift followed red‐shift with increasing local tensile strain, which sharp contrast linear direct excitons. Density functional theory calculations reveal shift arises from strain‐induced competition between two bandgap transitions spatial exciton funnel effect field. This work provides new insights into semiconductors, possesses potential applications flexible devices.

Язык: Английский

Engineering Multifunctional Surface Topography to Regulate Multiple Biological Responses DOI Creative Commons

Mohammad Asadi Tokmedash,

Changheon Kim,

Ajay P Chavda

и другие.

Biomaterials, Год журнала: 2025, Номер unknown, С. 123136 - 123136

Опубликована: Янв. 1, 2025

Язык: Английский

Процитировано

3

The Mechanical Behavior of 2D Metal Borides - MBenes: A Detailed Review DOI

Andrii Babenko,

Ehsan Ghasali,

Li Jie

и другие.

Materials Today Physics, Год журнала: 2025, Номер unknown, С. 101671 - 101671

Опубликована: Фев. 1, 2025

Язык: Английский

Процитировано

1

Performance Limits and Advancements in Single 2D Transition Metal Dichalcogenide Transistor DOI Creative Commons
Jing Chen, Mingyuan Sun, Zhenhua Wang

и другие.

Nano-Micro Letters, Год журнала: 2024, Номер 16(1)

Опубликована: Авг. 9, 2024

Abstract Two-dimensional (2D) transition metal dichalcogenides (TMDs) allow for atomic-scale manipulation, challenging the conventional limitations of semiconductor materials. This capability may overcome short-channel effect, sparking significant advancements in electronic devices that utilize 2D TMDs. Exploring dimension and performance limits transistors based on TMDs has gained substantial importance. review provides a comprehensive investigation into these single 2D-TMD transistor. It delves impacts miniaturization, including reduction channel length, gate source/drain contact dielectric thickness transistor operation performance. In addition, this detailed analysis parameters such as resistance, subthreshold swing, hysteresis loop, carrier mobility, on/off ratio, development p-type logic transistors. details two logical expressions transistor, current voltage. also emphasizes role TMD-based memory devices, focusing enhancing speed, endurance, data retention, extinction well reducing energy consumption functioning artificial synapses. demonstrates calculating methods dynamic synaptic devices. not only summarizes state art field but highlights potential future research directions applications. underscores anticipated challenges, opportunities, solutions navigating boundaries

Язык: Английский

Процитировано

8

Growth of copper oxide at V2O5/Cu interface and its impact on the performance of piezoresistive pressure sensors using V2O5 films DOI

Prasad T Waman,

N. Padma,

K.G. Girija

и другие.

Surfaces and Interfaces, Год журнала: 2025, Номер 57, С. 105765 - 105765

Опубликована: Янв. 1, 2025

Язык: Английский

Процитировано

1

Excellent visible light absorption and ultra-high photoelectric conversion efficiency of two-dimensional (MoSe2)x(MoSTe)1-x mosaic heterostructures DOI

Zi-Qiang Deng,

Xingchen Ding, Shiyao Liu

и другие.

Chemical Physics, Год журнала: 2024, Номер 583, С. 112299 - 112299

Опубликована: Апрель 19, 2024

Язык: Английский

Процитировано

3

Research Progress of Single-Photon Emitters Based on Two-Dimensional Materials DOI Creative Commons
Chengzhi Zhang,

Zehuizi Gong,

Dawei He

и другие.

Nanomaterials, Год журнала: 2024, Номер 14(11), С. 918 - 918

Опубликована: Май 23, 2024

From quantum communications to computing, single-photon emitters (SPEs) are essential components of numerous technologies. Two-dimensional (2D) materials have especially been found be highly attractive for the research into nanoscale light–matter interactions. In particular, localized photonic states at their surfaces attracted great attention due enormous potential applications in optics. Recently, SPEs achieved various 2D materials, while challenges still remain. This paper reviews recent progress on these based such as transition metal dichalcogenides (TMDs), hexagonal boron nitride (hBN), and twisted-angle materials. Additionally, we summarized strategies create, position, enhance, tune emission wavelength by introducing external fields system. For example, pronounced enhancement SPEs’ properties can coupling with fields, plasmonic field, locating optical microcavities. Finally, this also discusses current offers perspectives that could further stimulate scientific field. These emitters, unique physical integration potential, appealing information communication, well other technological fields.

Язык: Английский

Процитировано

3

Reducing Atomic Defects in 2D Transition Metal Dichalcogenides DOI Open Access
Yunhao Zhang, Jingwei Wang,

Huiyu Nong

и другие.

Advanced Functional Materials, Год журнала: 2024, Номер unknown

Опубликована: Сен. 3, 2024

Abstract Preparing high‐quality 2D semiconductors represented by transition metal dichalcogenides (TMDCs) is of great importance for the next‐generation devices. However, currently available TMDCs contain many atomic defects, which greatly affect their electronic and optical properties. This review starts with formation defects effects on properties TMDCs. Then, techniques characterizing are systematically summarized, including atomic‐resolution imaging spectroscopy measurements. Further, recent progress defect suppression during growth repair after reviewed. Finally, challenges opportunities in this important field discussed.

Язык: Английский

Процитировано

3

Interfacial Stress Transfer and Fracture in van der Waals Heterostructures DOI
Zheling Li, Mufeng Liu, Pankaj Kumar

и другие.

Advanced Materials, Год журнала: 2024, Номер 36(47)

Опубликована: Окт. 2, 2024

Abstract Artificially stacking 2D materials (2DMs) into vdW heterostructures creates with properties not present in nature that offer great potential for various applications such as flexible electronics. Properties of stacked structures are controlled largely by the interfacial interactions and structural integrity 2DMs. In spite their crucial roles, stress transfer failure mechanisms heterostructures, particularly during deformation, have been well addressed so far. this work, a MoS 2 /graphene heterostructure studied, through strain distributions both laterally individual 2DMs vertically across different revealed in‐situ. The fracture associated states monitored experimentally. This enables properties, shear strength energy, to be estimated. Based only on measured single heterostructure, criterion is proposed predict similar any lateral dimensions. work provides an insight deformation micromechanics value miniaturization applications, especially

Язык: Английский

Процитировано

3

Local Strain Engineering of Two-Dimensional Transition Metal Dichalcogenides Towards Quantum Emitters DOI Creative Commons

Ruoqi Ai,

Ximin Cui, Yang Li

и другие.

Nano-Micro Letters, Год журнала: 2025, Номер 17(1)

Опубликована: Янв. 8, 2025

Abstract Two-dimensional transition metal dichalcogenides (2D TMDCs) have received considerable attention in local strain engineering due to their extraordinary mechanical flexibility, electonic structure, and optical properties. The strain-induced out-of-plane deformations 2D TMDCs lead diverse excitonic behaviors versatile modulations properties, paving the way for development of advanced quantum technologies, flexible optoelectronic materials, straintronic devices. Research on has been delved into fabrication techniques, electronic state variations, applications. This review begins by summarizing state-of-the-art methods introducing TMDCs, followed an exploration impact intriguing phenomena resulting from strain, such as exciton funnelling anti-funnelling, are also discussed. We then shift focus application locally strained emitters, with various strategies outlined modulating properties TMDC-based emitters. Finally, we discuss remaining questions this field provide outlook future TMDCs.

Язык: Английский

Процитировано

0

Strain‐Induced Bandgap Narrowing in Crumpled TMDs for NIR Light Detection DOI Open Access
Ajit K. Katiyar, Youngjae Kim, B. Kim

и другие.

Small, Год журнала: 2025, Номер unknown

Опубликована: Фев. 19, 2025

Abstract Transition metal dichalcogenides (TMDs) such as MoS 2 and WS emerge promising materials in optoelectronics, especially for flexible photo‐ /image‐sensors due to their direct bandgap nature. However, the intrinsic bandgaps of these semiconductor monolayers (e.g., ≈1.86 eV ≈2.0 eV) restrict operational wavelength range developed photosensors visible spectrum. In addition, ultrathin nature provides a limited optical absorption cross‐section that restricts device's performance. Exploiting strong impact strain on electronic band structure, engineering has emerged approach adjusting electrical characteristics layered semiconductors. particular, application tensile can decrease bandgaps, which potentially extend toward near‐infrared (NIR) wavelength. Herein, non‐conventional crumpling is employed incorporate uniaxial into graphene/TMD/graphene metal‐semiconductor‐metal photodetector (PD) array. The utilized crumpled geometry exclusive photon management with enhanced light scattering trapping at sinusoidal surface results increased NIR range.

Язык: Английский

Процитировано

0