Abnormal Response of Indirect Excitons to Non‐Uniform Elastic Strain in MoS2 Flakes DOI

Xinxin Yue,

Lifu Zhang, Xiang Chen

et al.

Advanced Optical Materials, Journal Year: 2024, Volume and Issue: unknown

Published: Oct. 15, 2024

Abstract Regulating the electronic structures and carrier dynamics in 2D materials via elastic strain is a fascinating avenue for tailoring their optoelectronic properties at atomic scale. Here, abnormal response of indirect excitons to non‐uniform MoS 2 flakes reported. The introduced by transferring them pre‐prepared convex cross on SiO /Si substrate, where topography distribution are determined force microscopy Raman spectroscopy, respectively. It observed that emission energy shows an unexpected blue‐shift followed red‐shift with increasing local tensile strain, which sharp contrast linear direct excitons. Density functional theory calculations reveal shift arises from strain‐induced competition between two bandgap transitions spatial exciton funnel effect field. This work provides new insights into semiconductors, possesses potential applications flexible devices.

Language: Английский

Engineering Multifunctional Surface Topography to Regulate Multiple Biological Responses DOI Creative Commons

Mohammad Asadi Tokmedash,

Changheon Kim,

Ajay P Chavda

et al.

Biomaterials, Journal Year: 2025, Volume and Issue: unknown, P. 123136 - 123136

Published: Jan. 1, 2025

Language: Английский

Citations

3
The Mechanical Behavior of 2D Metal Borides - MBenes: A Detailed Review DOI

Andrii Babenko,

Ehsan Ghasali,

Li Jie

et al.

Materials Today Physics, Journal Year: 2025, Volume and Issue: unknown, P. 101671 - 101671

Published: Feb. 1, 2025

Language: Английский

Citations

1
Performance Limits and Advancements in Single 2D Transition Metal Dichalcogenide Transistor DOI Creative Commons
Jing Chen, Mingyuan Sun, Zhenhua Wang

et al.

Nano-Micro Letters, Journal Year: 2024, Volume and Issue: 16(1)

Published: Aug. 9, 2024

Abstract Two-dimensional (2D) transition metal dichalcogenides (TMDs) allow for atomic-scale manipulation, challenging the conventional limitations of semiconductor materials. This capability may overcome short-channel effect, sparking significant advancements in electronic devices that utilize 2D TMDs. Exploring dimension and performance limits transistors based on TMDs has gained substantial importance. review provides a comprehensive investigation into these single 2D-TMD transistor. It delves impacts miniaturization, including reduction channel length, gate source/drain contact dielectric thickness transistor operation performance. In addition, this detailed analysis parameters such as resistance, subthreshold swing, hysteresis loop, carrier mobility, on/off ratio, development p-type logic transistors. details two logical expressions transistor, current voltage. also emphasizes role TMD-based memory devices, focusing enhancing speed, endurance, data retention, extinction well reducing energy consumption functioning artificial synapses. demonstrates calculating methods dynamic synaptic devices. not only summarizes state art field but highlights potential future research directions applications. underscores anticipated challenges, opportunities, solutions navigating boundaries

Language: Английский

Citations

8
Growth of copper oxide at V2O5/Cu interface and its impact on the performance of piezoresistive pressure sensors using V2O5 films DOI

Prasad T Waman,

N. Padma,

K.G. Girija

et al.

Surfaces and Interfaces, Journal Year: 2025, Volume and Issue: 57, P. 105765 - 105765

Published: Jan. 1, 2025

Language: Английский

Citations

1
Excellent visible light absorption and ultra-high photoelectric conversion efficiency of two-dimensional (MoSe2)x(MoSTe)1-x mosaic heterostructures DOI

Zi-Qiang Deng,

Xingchen Ding, Shiyao Liu

et al.

Chemical Physics, Journal Year: 2024, Volume and Issue: 583, P. 112299 - 112299

Published: April 19, 2024

Language: Английский

Citations

3
Research Progress of Single-Photon Emitters Based on Two-Dimensional Materials DOI Creative Commons
Chengzhi Zhang,

Zehuizi Gong,

Dawei He

et al.

Nanomaterials, Journal Year: 2024, Volume and Issue: 14(11), P. 918 - 918

Published: May 23, 2024

From quantum communications to computing, single-photon emitters (SPEs) are essential components of numerous technologies. Two-dimensional (2D) materials have especially been found be highly attractive for the research into nanoscale light–matter interactions. In particular, localized photonic states at their surfaces attracted great attention due enormous potential applications in optics. Recently, SPEs achieved various 2D materials, while challenges still remain. This paper reviews recent progress on these based such as transition metal dichalcogenides (TMDs), hexagonal boron nitride (hBN), and twisted-angle materials. Additionally, we summarized strategies create, position, enhance, tune emission wavelength by introducing external fields system. For example, pronounced enhancement SPEs’ properties can coupling with fields, plasmonic field, locating optical microcavities. Finally, this also discusses current offers perspectives that could further stimulate scientific field. These emitters, unique physical integration potential, appealing information communication, well other technological fields.

Language: Английский

Citations

3
Reducing Atomic Defects in 2D Transition Metal Dichalcogenides DOI Open Access
Yunhao Zhang, Jingwei Wang,

Huiyu Nong

et al.

Advanced Functional Materials, Journal Year: 2024, Volume and Issue: unknown

Published: Sept. 3, 2024

Abstract Preparing high‐quality 2D semiconductors represented by transition metal dichalcogenides (TMDCs) is of great importance for the next‐generation devices. However, currently available TMDCs contain many atomic defects, which greatly affect their electronic and optical properties. This review starts with formation defects effects on properties TMDCs. Then, techniques characterizing are systematically summarized, including atomic‐resolution imaging spectroscopy measurements. Further, recent progress defect suppression during growth repair after reviewed. Finally, challenges opportunities in this important field discussed.

Language: Английский

Citations

3
Interfacial Stress Transfer and Fracture in van der Waals Heterostructures DOI
Zheling Li, Mufeng Liu, Pankaj Kumar

et al.

Advanced Materials, Journal Year: 2024, Volume and Issue: 36(47)

Published: Oct. 2, 2024

Abstract Artificially stacking 2D materials (2DMs) into vdW heterostructures creates with properties not present in nature that offer great potential for various applications such as flexible electronics. Properties of stacked structures are controlled largely by the interfacial interactions and structural integrity 2DMs. In spite their crucial roles, stress transfer failure mechanisms heterostructures, particularly during deformation, have been well addressed so far. this work, a MoS 2 /graphene heterostructure studied, through strain distributions both laterally individual 2DMs vertically across different revealed in‐situ. The fracture associated states monitored experimentally. This enables properties, shear strength energy, to be estimated. Based only on measured single heterostructure, criterion is proposed predict similar any lateral dimensions. work provides an insight deformation micromechanics value miniaturization applications, especially

Language: Английский

Citations

3
Local Strain Engineering of Two-Dimensional Transition Metal Dichalcogenides Towards Quantum Emitters DOI Creative Commons

Ruoqi Ai,

Ximin Cui, Yang Li

et al.

Nano-Micro Letters, Journal Year: 2025, Volume and Issue: 17(1)

Published: Jan. 8, 2025

Abstract Two-dimensional transition metal dichalcogenides (2D TMDCs) have received considerable attention in local strain engineering due to their extraordinary mechanical flexibility, electonic structure, and optical properties. The strain-induced out-of-plane deformations 2D TMDCs lead diverse excitonic behaviors versatile modulations properties, paving the way for development of advanced quantum technologies, flexible optoelectronic materials, straintronic devices. Research on has been delved into fabrication techniques, electronic state variations, applications. This review begins by summarizing state-of-the-art methods introducing TMDCs, followed an exploration impact intriguing phenomena resulting from strain, such as exciton funnelling anti-funnelling, are also discussed. We then shift focus application locally strained emitters, with various strategies outlined modulating properties TMDC-based emitters. Finally, we discuss remaining questions this field provide outlook future TMDCs.

Language: Английский

Citations

0
Strain‐Induced Bandgap Narrowing in Crumpled TMDs for NIR Light Detection DOI Open Access
Ajit K. Katiyar, Youngjae Kim, B. Kim

et al.

Small, Journal Year: 2025, Volume and Issue: unknown

Published: Feb. 19, 2025

Abstract Transition metal dichalcogenides (TMDs) such as MoS 2 and WS emerge promising materials in optoelectronics, especially for flexible photo‐ /image‐sensors due to their direct bandgap nature. However, the intrinsic bandgaps of these semiconductor monolayers (e.g., ≈1.86 eV ≈2.0 eV) restrict operational wavelength range developed photosensors visible spectrum. In addition, ultrathin nature provides a limited optical absorption cross‐section that restricts device's performance. Exploiting strong impact strain on electronic band structure, engineering has emerged approach adjusting electrical characteristics layered semiconductors. particular, application tensile can decrease bandgaps, which potentially extend toward near‐infrared (NIR) wavelength. Herein, non‐conventional crumpling is employed incorporate uniaxial into graphene/TMD/graphene metal‐semiconductor‐metal photodetector (PD) array. The utilized crumpled geometry exclusive photon management with enhanced light scattering trapping at sinusoidal surface results increased NIR range.

Language: Английский

Citations

0