Journal of Applied Physics,
Год журнала:
2023,
Номер
134(10)
Опубликована: Сен. 8, 2023
Graphene-based
field-effect
transistors
(FETs)
are
suitable
for
pH
sensors
due
to
their
outstanding
surface
chemical
properties
and
its
biocompatibility.
To
improve
the
devices'
stability
sensitivity,
different
sets
of
dielectric
passivation
layers
composed
monolayer
hexagonal
boron
nitride
with
without
aluminum
oxide
were
evaluated.
Non-linearities
response
observed.
Heterostructure
FETs
derived
from
subtractive
manufacturing
commercially
transferred
two-dimensional
materials
on
four-inch
SiO2/Si
wafers
via
stainless
steel
polypropylene
masking.
Phosphate
solutions
(10
mM)
varying
incubated
bare
devices,
whereby
liquid-gating
elucidated
linear
changes
in
Dirac
voltage
hBN/graphene
(−40
mV/pH)
that
was
smaller
than
a
device
consisting
only
graphene
(−47
mV/pH).
passivated
nanofilms
electron
beam
or
atomic
layer
deposition
observed
have
distinct
Raman
spectral
force
microscopy
topologies
corroborating
hypothesis
morphological
differences
deposited
influence
pH-dependent
electrical
properties.
Atomic
2D
sensing
areas
resulted
non-linear
shifting
respect
evolved
as
function
thickness
between
capping
monolayer.
The
AlxOy
graphene-based
progressively
reduced
upon
basic
wet
etching
AlxOy.
Overall,
exhibit
deposition-dependent
responses.
ACS Nano,
Год журнала:
2022,
Номер
16(6), С. 8651 - 8661
Опубликована: Апрель 22, 2022
Optoelectronic
synaptic
transistors
with
hybrid
heterostructure
channels
have
been
extensively
developed
to
construct
artificial
visual
systems,
inspired
by
the
human
system.
However,
optoelectronic
taking
full
advantages
of
superior
behaviors,
low-cost
processes,
low-power
consumption,
and
environmental
benignity
remained
a
challenge.
Herein,
we
report
fully
printed,
high-performance
transistor
based
on
heterostructures
heavy-metal-free
InP/ZnSe
core/shell
quantum
dots
(QDs)
n-type
SnO2
amorphous
oxide
semiconductors
(AOSs).
The
elaborately
designed
heterojunction
improves
separation
efficiency
photoexcited
charges,
leading
high
photoresponsivity
tunable
weight
changes.
Under
coordinated
modulation
electrical
optical
modes,
important
biological
including
excitatory
postsynaptic
current,
short/long-term
plasticity,
paired-pulse
facilitation,
were
demonstrated
low
power
consumption
(∼5.6
pJ
per
event).
QD/SnO2
vision
system
illustrated
significantly
improved
accuracy
91%
in
image
recognition,
compared
that
bare
counterparts
(58%).
Combining
outstanding
characteristics
both
AOS
materials
structures,
this
work
provides
printable,
low-cost,
high-efficiency
strategy
achieve
advanced
synapses
for
neuromorphic
electronics
intelligence.
Science and Technology of Advanced Materials,
Год журнала:
2023,
Номер
24(1)
Опубликована: Март 3, 2023
The
traditional
von
Neumann
architecture
is
gradually
failing
to
meet
the
urgent
need
for
highly
parallel
computing,
high-efficiency,
and
ultra-low
power
consumption
current
explosion
of
data.
Brain-inspired
neuromorphic
computing
can
break
inherent
limitations
computers.
Neuromorphic
devices
are
key
hardware
units
chips
implement
intelligent
computing.
In
recent
years,
development
optogenetics
photosensitive
materials
has
provided
new
avenues
research
devices.
emerging
optoelectronic
have
received
a
lot
attentions
because
they
shown
great
potential
in
field
visual
bionics.
this
paper,
we
summarize
latest
bionic
applications
synaptic
memristors
transistors
based
on
different
materials.
basic
principle
bio-vision
formation
first
introduced.
Then
device
structures
operating
mechanisms
discussed.
Most
importantly,
progresses
various
fields
perception
described.
Finally,
problems
challenges
summarized,
future
bionics
also
proposed.
Nano Letters,
Год журнала:
2022,
Номер
22(13), С. 5434 - 5442
Опубликована: Июнь 29, 2022
Narrow-band-gap
organic
semiconductors
have
emerged
as
appealing
near-infrared
(NIR)
sensing
materials
by
virtue
of
their
unique
optoelectronic
properties.
However,
limited
carrier
mobility
impedes
the
implementation
large-area,
dynamic
NIR
sensor
arrays.
In
this
work,
high-performance
inorganic-organic
hybrid
phototransistor
arrays
are
achieved
for
sensing,
taking
advantage
high
electron
In2O3
and
strong
absorption
a
BTPV-4F:PTB7-Th
bulk
heterojunction
(BHJ)
with
an
enhanced
photogating
effect.
As
result,
phototransistors
reach
responsivity
1393.0
A
W-1,
specific
detectivity
4.8
×
1012
jones,
fast
response
0.72
ms
to
light
(900
nm).
Meanwhile,
integrated
16
array
one-transistor-one-phototransistor
(1T1PT)
architecture
is
achieved.
On
basis
effect,
can
not
only
achieve
real-time,
mapping
but
also
implement
image
preprocessing,
which
promising
advanced
sensors.
Advanced Optical Materials,
Год журнала:
2025,
Номер
unknown
Опубликована: Фев. 28, 2025
Abstract
The
advancement
of
optoelectronic
sensing
synapse
devices,
which
integrate
multiple
sensory
modalities
and
achieve
the
efficiency
biological
vision
systems,
is
crucial
for
field
artificial
systems.
This
work
incorporates
CdSe/CdSe
x
S
1‐x
quantum
dots
with
In
2
O
3
semiconductor
into
a
heterojunction
via
low‐cost
fully
solution‐based
process
to
endow
synaptic
transistor
dual‐modality
lights
electricity.
Optoelectronic
transistors
exhibit
sensitivity
broad
spectrum
light,
encompassing
wavelengths
ranging
from
395
808
nm,
in
addition
their
responsiveness
electrical
signals.
information
processing
therefore
improved
by
integration
senses.
Additionally,
doping
lithium
ions
dielectric
layer,
gate
capacitance
increased
over
ten
times
significantly
devices
channel
modulation
retention
characteristics.
An
visual
perception
demo
based
on
Quantum
Dot‐Enhanced
ransistors
(QDET)
well
presented
showcase
practical
application
pattern
recognition
QDETs
offer
promising
platform
energy‐efficient,
high‐performance
neuromorphic
Advanced Sensor Research,
Год журнала:
2023,
Номер
2(8)
Опубликована: Март 3, 2023
Abstract
It
is
vital
to
acquire
real‐time
pH
signals
with
high
resolution
as
variation
can
reflect
important
information
regarding
health
status
and
physiological
environment.
Field‐effect
transistor
(FET)‐based
biosensors
(bio‐FETs),
a
kind
of
potentiometric
sensor,
are
being
rapidly
developed
for
detection
due
their
advantages
sensitivity,
low
temperature
dependence,
portability.
More
importantly,
the
scalability
bio‐FETs
renders
them
applicable
achieving
spatial
in
sensing.
In
this
review
paper,
design,
operation
principle,
critical
characteristics
FET‐based
sensor
introduced.
Then,
recent
progress
mapping
FET
arrays,
including
static
array
where
pixel
directly
addressed
by
wiring,
active‐matrix
accessed
additional
switching
FETs,
presented.
Last,
typical
examples
arrays
biomedical
applications,
such
monitoring
DNA
sequencing
elongation
Advanced Materials,
Год журнала:
2024,
Номер
36(33)
Опубликована: Июнь 18, 2024
Artificial
spiking
neurons
capable
of
interpreting
ionic
information
into
electrical
spikes
are
critical
to
mimic
biological
signaling
systems.
Mott
memristors
attractive
for
constructing
artificial
due
their
simple
structure,
low
energy
consumption,
and
rich
neural
dynamics.
However,
challenges
remain
in
achieving
ion-mediated
biohybrid-interfacing
neurons.
Here,
a
biomimetic
chemical
neuron
(SCN)
utilizing
an
NbO
Advanced Optical Materials,
Год журнала:
2022,
Номер
10(24)
Опубликована: Окт. 25, 2022
Abstract
Printable
oxide
transistors
have
emerged
as
important
optoelectronic
synaptic
devices
to
emulate
the
human
visual
cognitive
system
by
integrating
both
photo‐sensing
and
perception
functions.
However,
inferior
electrical
performance
low
pixel
density
of
printed
impede
their
implementation
complex
neuromorphic
computing.
Herein,
a
printable
all‐oxide
transistor
array
based
on
modified
coffee‐ring
structure
indium
tin
(ITO)
is
reported.
The
extraordinary
structural
design
endows
ITO
with
high
device
uniformity,
outstanding
performance,
superior
process
efficiency.
Furthermore,
10
×
12
spatial
resolution
(142
dpi)
exhibits
durable
detection
memory
behaviors.
Meanwhile,
an
artificial
neural
network
accuracy
in
recognition
rate.
These
results
promise
efficiency
exceptional
printing
strategy
developing
advanced
for
systems.
ACS Applied Materials & Interfaces,
Год журнала:
2023,
Номер
15(19), С. 23583 - 23592
Опубликована: Апрель 6, 2023
Field-effect
transistor
(FET)
biosensors
based
on
two-dimensional
(2D)
materials
have
drawn
significant
attention
due
to
their
outstanding
sensitivity.
However,
the
Boltzmann
distribution
of
electrons
imposes
a
physical
limit
subthreshold
swing
(SS),
and
2D-material
biosensor
with
sub-60
mV/dec
SS
has
not
been
realized,
which
hinders
further
increase
sensitivity
FET
biosensors.
Here,
we
report
tunnel
FETs
(TFETs)
SnSe2/WSe2
heterostructure
observe
tunneling
effect
2D
material
in
aqueous
solution
for
first
time
an
ultralow
29
mV/dec.
A
bilayer
dielectric
(Al2O3/HfO2)
graphene
contacts,
significantly
reduce
leakage
current
contact
resistance,
respectively,
are
crucial
realization
solution.
Then,
propose
novel
biosensing
method
by
using
as
sensing
signal.
The
TFETs
show
extremely
high
pH
895/pH
SS,
surpassing
single
(WSe2)
8-fold.
Specific
detection
glucose
is
superb
(3158
A/A
5
mM),
wide
range
(from
10-9
10-3
M),
low
(10-9
rapid
response
rate
(11
s).
sensors
also
exhibit
ability
monitoring
complex
biofluid
(sweat).
This
work
provides
platform
ultrasensitive
biosensing.
discovery
may
stimulate
fundamental
research
potential
applications.
