Advanced Functional Materials,
Год журнала:
2024,
Номер
unknown
Опубликована: Ноя. 18, 2024
Abstract
Defect
engineering
is
extensively
utilized
in
2D
memory
devices
due
to
its
effectiveness
enhancing
charge‐trapping
ability.
However,
conventional
defect
modulation
techniques
usually
introduce
only
single
types
of
carrier
traps
and
cannot
reconfigure
trap
densities
after
device
fabrication.
Here,
for
the
first
time,
electrical
stimulation‐driven
long‐range
migration
Cu
ions
within
CuInP
2
S
6
(CIPS)
films
demonstrated
simultaneously
both
electron
hole
enable
reconfigurable
interfacial
trapping.
This
process
referred
as
“electrical
stimulation‐induced
engineering”.
By
integrating
these
dual‐gate
coupling
effect,
window‐to‐scan
range
(MW/S.R)
ratio,
which
reflects
device's
charge
trapping
ability,
doubled
peaked
at
78.1%
V
bg
=
±
80
V.
Additionally,
based
on
graphene/CIPS/h‐BN/WSe
heterostructure
exhibits
a
maximum
on/off
ratio
reaching
10
7
multi‐level
storage
states,
neuromorphic
computing
logic
operations
platform.
With
81
states
paired‐pulse
facilitation
(
PPF
),
it
achieves
≈90%
accuracy
reservoir
(RC)
simulations.
These
results
highlight
potential
next‐generation
electronics.
Chemical Reviews,
Год журнала:
2025,
Номер
unknown
Опубликована: Янв. 2, 2025
Recent
breakthroughs
in
brain-inspired
computing
promise
to
address
a
wide
range
of
problems
from
security
healthcare.
However,
the
current
strategy
implementing
artificial
intelligence
algorithms
using
conventional
silicon
hardware
is
leading
unsustainable
energy
consumption.
Neuromorphic
based
on
electronic
devices
mimicking
biological
systems
emerging
as
low-energy
alternative,
although
further
progress
requires
materials
that
can
mimic
function
while
maintaining
scalability
and
speed.
As
result
their
diverse
unique
properties,
atomically
thin
two-dimensional
(2D)
are
promising
building
blocks
for
next-generation
electronics
including
nonvolatile
memory,
in-memory
neuromorphic
computing,
flexible
edge-computing
systems.
Furthermore,
2D
achieve
biorealistic
synaptic
neuronal
responses
extend
beyond
logic
memory
Here,
we
provide
comprehensive
review
growth,
fabrication,
integration
van
der
Waals
heterojunctions
optoelectronic
devices,
circuits,
For
each
case,
relationship
between
physical
properties
device
emphasized
followed
by
critical
comparison
technologies
different
applications.
We
conclude
with
forward-looking
perspective
key
remaining
challenges
opportunities
applications
leverage
fundamental
heterojunctions.
Nano Letters,
Год журнала:
2024,
Номер
24(20), С. 6192 - 6200
Опубликована: Апрель 26, 2024
Creating
artificial
synapses
that
can
interact
with
biological
neural
systems
is
critical
for
developing
advanced
intelligent
systems.
However,
there
are
still
many
difficulties,
including
device
morphology
and
fluid
selection.
Based
on
Micro-Electro-Mechanical
System
technologies,
we
utilized
two
immiscible
electrolytes
to
form
a
liquid/liquid
interface
at
the
tip
of
funnel
nanochannel,
effectively
enabling
wafer-level
fabrication,
interactions
between
multiple
information
carriers,
electron-to-chemical
signal
transitions.
The
distinctive
ionic
transport
properties
successfully
achieved
hysteresis
in
transport,
resulting
adjustable
multistage
conductance
gradient
synaptic
functions.
Notably,
similar
terms
structure
especially
low
operating
voltage
(200
mV),
which
matches
potential
(∼110
mV).
This
work
lays
foundation
realizing
function
iontronics
neuromorphic
computing
ultralow
voltages
in-memory
computing,
break
limits
barriers
brain–machine
interfaces.
Nano-Micro Letters,
Год журнала:
2024,
Номер
16(1)
Опубликована: Авг. 9, 2024
Abstract
Two-dimensional
(2D)
transition
metal
dichalcogenides
(TMDs)
allow
for
atomic-scale
manipulation,
challenging
the
conventional
limitations
of
semiconductor
materials.
This
capability
may
overcome
short-channel
effect,
sparking
significant
advancements
in
electronic
devices
that
utilize
2D
TMDs.
Exploring
dimension
and
performance
limits
transistors
based
on
TMDs
has
gained
substantial
importance.
review
provides
a
comprehensive
investigation
into
these
single
2D-TMD
transistor.
It
delves
impacts
miniaturization,
including
reduction
channel
length,
gate
source/drain
contact
dielectric
thickness
transistor
operation
performance.
In
addition,
this
detailed
analysis
parameters
such
as
resistance,
subthreshold
swing,
hysteresis
loop,
carrier
mobility,
on/off
ratio,
development
p-type
logic
transistors.
details
two
logical
expressions
transistor,
current
voltage.
also
emphasizes
role
TMD-based
memory
devices,
focusing
enhancing
speed,
endurance,
data
retention,
extinction
well
reducing
energy
consumption
functioning
artificial
synapses.
demonstrates
calculating
methods
dynamic
synaptic
devices.
not
only
summarizes
state
art
field
but
highlights
potential
future
research
directions
applications.
underscores
anticipated
challenges,
opportunities,
solutions
navigating
boundaries
Inorganic Chemistry Frontiers,
Год журнала:
2023,
Номер
10(21), С. 6253 - 6261
Опубликована: Янв. 1, 2023
Based
on
the
“electronic
structure
engineering
bucket
effect”,
a
new
AEM-containing
sulfide
BaZnGeS
4
with
wide
band
gap
(∼3.36
eV)
and
large
SHG
response
(
∼
0.8×
AGS)
has
been
designed
synthesized
via
high-temperature
solid-state
reactions.
IEEE Transactions on Electron Devices,
Год журнала:
2024,
Номер
71(4), С. 2729 - 2735
Опубликована: Фев. 26, 2024
Van
der
Waals
stacking
engineering
presents
a
potent
strategy
for
achieving
specialized
functionality
and
high-performance
optoelectronic
devices.
Herein,
we
report
the
development
of
self-powered
photodetector
with
high
performance
polarization
sensitive
based
on
Ta2PdS6/MoTe2
heterojunction.
Leveraging
inherent
photovoltaic
effect
(PVE),
as-fabricated
device
demonstrates
exemplary
characteristics
at
zero
bias,
characterized
by
broad
spectral
response
extending
from
visible
to
near-infrared
(405–1310
nm)
spectrum.
The
achieved
responsivity
474
mA/W
swift
time
107/98
$\mu
\text{s}$
.
Remarkably,
intrinsic
anisotropic
properties
2-D
Ta2PdS6
nanosheets
endow
heterojunction
exceptional
sensitivity,
recording
value
3.56
under
635-nm
polarized
light.
This
finding
significantly
advances
state
heterostructures,
demonstrating
their
considerable
promise
next
generation
applications.
Advanced Functional Materials,
Год журнала:
2024,
Номер
unknown
Опубликована: Апрель 16, 2024
Abstract
Double
van
der
Waals
heterojunctions
(vdWHs)
based
on
2D
materials
showcase
multifunctional
properties,
including
anti‐ambipolar
behavior
and
polarization‐sensitive
photodetection
capabilities,
providing
a
new
degree
of
freedom
for
the
development
next‐generation
integrated
electronics
optoelectronics.
Herein,
this
work
reports
an
transistor
with
high
polarized
photosensitivity
MoS
2
/Ta
NiS
5
/WSe
double
vdWH
back‐to‐back
type‐I
band
alignment.
It
demonstrates
noticeable
negative
differential
transconductance
ultrahigh
peak‐to‐valley
ratio
4.3
×
10
4
bidirectional
variation
from
41.6
to
−17.5
nS
when
V
D
=
V.
is
ascribed
effective
gate‐modulation
reversed
edge
bending
at
interfaces.
Additionally,
structure
benefits
photogating
effect
anisotropic
Ta
interlayer,
achieving
peak
responsivity
120.58
A
W
−1
decent
specific
detectivity
2.65
12
Jones
g
exhibiting
exceptional
photocurrent
15.31
via
photovoltaic
under
635
nm
light.
These
findings
not
only
expand
potential
applications
advanced
material
but
also
offer
valuable
insights
optoelectronic
devices
leveraging
vdWHs.
