2D Memory Enabled by Electrical Stimulation‐Induced Defect Engineering for Complicated Neuromorphic Computing DOI
Jie Cheng, Pan Zhang,

Xinyu Ouyang

и другие.

Advanced Functional Materials, Год журнала: 2024, Номер unknown

Опубликована: Ноя. 18, 2024

Abstract Defect engineering is extensively utilized in 2D memory devices due to its effectiveness enhancing charge‐trapping ability. However, conventional defect modulation techniques usually introduce only single types of carrier traps and cannot reconfigure trap densities after device fabrication. Here, for the first time, electrical stimulation‐driven long‐range migration Cu ions within CuInP 2 S 6 (CIPS) films demonstrated simultaneously both electron hole enable reconfigurable interfacial trapping. This process referred as “electrical stimulation‐induced engineering”. By integrating these dual‐gate coupling effect, window‐to‐scan range (MW/S.R) ratio, which reflects device's charge trapping ability, doubled peaked at 78.1% V bg = ± 80 V. Additionally, based on graphene/CIPS/h‐BN/WSe heterostructure exhibits a maximum on/off ratio reaching 10 7 multi‐level storage states, neuromorphic computing logic operations platform. With 81 states paired‐pulse facilitation ( PPF ), it achieves ≈90% accuracy reservoir (RC) simulations. These results highlight potential next‐generation electronics.

Язык: Английский

Two-Dimensional Materials for Brain-Inspired Computing Hardware DOI
Shreyash Hadke, Min‐A Kang,

Vinod K. Sangwan

и другие.

Chemical Reviews, Год журнала: 2025, Номер unknown

Опубликована: Янв. 2, 2025

Recent breakthroughs in brain-inspired computing promise to address a wide range of problems from security healthcare. However, the current strategy implementing artificial intelligence algorithms using conventional silicon hardware is leading unsustainable energy consumption. Neuromorphic based on electronic devices mimicking biological systems emerging as low-energy alternative, although further progress requires materials that can mimic function while maintaining scalability and speed. As result their diverse unique properties, atomically thin two-dimensional (2D) are promising building blocks for next-generation electronics including nonvolatile memory, in-memory neuromorphic computing, flexible edge-computing systems. Furthermore, 2D achieve biorealistic synaptic neuronal responses extend beyond logic memory Here, we provide comprehensive review growth, fabrication, integration van der Waals heterojunctions optoelectronic devices, circuits, For each case, relationship between physical properties device emphasized followed by critical comparison technologies different applications. We conclude with forward-looking perspective key remaining challenges opportunities applications leverage fundamental heterojunctions.

Язык: Английский

Процитировано

5

Artificial Funnel Nanochannel Device Emulates Synaptic Behavior DOI
Peiyue Li, Junjie Liu, Jun‐Hui Yuan

и другие.

Nano Letters, Год журнала: 2024, Номер 24(20), С. 6192 - 6200

Опубликована: Апрель 26, 2024

Creating artificial synapses that can interact with biological neural systems is critical for developing advanced intelligent systems. However, there are still many difficulties, including device morphology and fluid selection. Based on Micro-Electro-Mechanical System technologies, we utilized two immiscible electrolytes to form a liquid/liquid interface at the tip of funnel nanochannel, effectively enabling wafer-level fabrication, interactions between multiple information carriers, electron-to-chemical signal transitions. The distinctive ionic transport properties successfully achieved hysteresis in transport, resulting adjustable multistage conductance gradient synaptic functions. Notably, similar terms structure especially low operating voltage (200 mV), which matches potential (∼110 mV). This work lays foundation realizing function iontronics neuromorphic computing ultralow voltages in-memory computing, break limits barriers brain–machine interfaces.

Язык: Английский

Процитировано

12

Sliding ferroelectricity in two-dimensional materials and device applications DOI

Xiaoyao Sun,

Qian Xia, Tengfei Cao

и другие.

Materials Science and Engineering R Reports, Год журнала: 2025, Номер 163, С. 100927 - 100927

Опубликована: Янв. 11, 2025

Язык: Английский

Процитировано

1

Double alkaline earth metals sulfide SrMgGeS4 with high laser-induced damage threshold and strong second-harmonic generation DOI
Hongshan Wang, Yu Chu, Xueting Pan

и другие.

Materials Today Physics, Год журнала: 2023, Номер 38, С. 101243 - 101243

Опубликована: Сен. 29, 2023

Язык: Английский

Процитировано

19

Performance Limits and Advancements in Single 2D Transition Metal Dichalcogenide Transistor DOI Creative Commons
Jing Chen, Mingyuan Sun, Zhenhua Wang

и другие.

Nano-Micro Letters, Год журнала: 2024, Номер 16(1)

Опубликована: Авг. 9, 2024

Abstract Two-dimensional (2D) transition metal dichalcogenides (TMDs) allow for atomic-scale manipulation, challenging the conventional limitations of semiconductor materials. This capability may overcome short-channel effect, sparking significant advancements in electronic devices that utilize 2D TMDs. Exploring dimension and performance limits transistors based on TMDs has gained substantial importance. review provides a comprehensive investigation into these single 2D-TMD transistor. It delves impacts miniaturization, including reduction channel length, gate source/drain contact dielectric thickness transistor operation performance. In addition, this detailed analysis parameters such as resistance, subthreshold swing, hysteresis loop, carrier mobility, on/off ratio, development p-type logic transistors. details two logical expressions transistor, current voltage. also emphasizes role TMD-based memory devices, focusing enhancing speed, endurance, data retention, extinction well reducing energy consumption functioning artificial synapses. demonstrates calculating methods dynamic synaptic devices. not only summarizes state art field but highlights potential future research directions applications. underscores anticipated challenges, opportunities, solutions navigating boundaries

Язык: Английский

Процитировано

8

基于极性可重构WSe2肖特基异质结的非对称逻辑整 流器和光电探测器 DOI Open Access
Jianming Huang,

Kaixiang Shu,

Nabuqi Bu

и другие.

Science China Materials, Год журнала: 2023, Номер 66(12), С. 4711 - 4722

Опубликована: Ноя. 22, 2023

Язык: Английский

Процитировано

17

A new infrared nonlinear optical material BaZnGeS4 with a wide band gap and large nonlinear optical response DOI
Hongshan Wang, Xueting Pan, Wang Zhao

и другие.

Inorganic Chemistry Frontiers, Год журнала: 2023, Номер 10(21), С. 6253 - 6261

Опубликована: Янв. 1, 2023

Based on the “electronic structure engineering bucket effect”, a new AEM-containing sulfide BaZnGeS 4 with wide band gap (∼3.36 eV) and large SHG response ( ∼ 0.8× AGS) has been designed synthesized via high-temperature solid-state reactions.

Язык: Английский

Процитировано

15

Enhancing methanol oxidation electrocatalysis by Pt/Mo2CT -rGO ternary hybrid catalyst DOI

Ruige Wang,

Xin Zhang,

Sijie Chang

и другие.

Fuel, Год журнала: 2023, Номер 360, С. 130507 - 130507

Опубликована: Дек. 10, 2023

Язык: Английский

Процитировано

10

Self-Powered Photodetector With High Polarization Sensitivity Enabled by Ta2PdS6/MoTe2 Heterojunction DOI
Rui Xiong, Quan Chen, Tao Zheng

и другие.

IEEE Transactions on Electron Devices, Год журнала: 2024, Номер 71(4), С. 2729 - 2735

Опубликована: Фев. 26, 2024

Van der Waals stacking engineering presents a potent strategy for achieving specialized functionality and high-performance optoelectronic devices. Herein, we report the development of self-powered photodetector with high performance polarization sensitive based on Ta2PdS6/MoTe2 heterojunction. Leveraging inherent photovoltaic effect (PVE), as-fabricated device demonstrates exemplary characteristics at zero bias, characterized by broad spectral response extending from visible to near-infrared (405–1310 nm) spectrum. The achieved responsivity 474 mA/W swift time 107/98 $\mu \text{s}$ . Remarkably, intrinsic anisotropic properties 2-D Ta2PdS6 nanosheets endow heterojunction exceptional sensitivity, recording value 3.56 under 635-nm polarized light. This finding significantly advances state heterostructures, demonstrating their considerable promise next generation applications.

Язык: Английский

Процитировано

4

Multifunctional Phototransistor Based on Double Van der Waals Heterojunction with Reversed Band Edge Bending DOI

Shaowu Xiao,

Tao Zheng, Wenlong Chen

и другие.

Advanced Functional Materials, Год журнала: 2024, Номер unknown

Опубликована: Апрель 16, 2024

Abstract Double van der Waals heterojunctions (vdWHs) based on 2D materials showcase multifunctional properties, including anti‐ambipolar behavior and polarization‐sensitive photodetection capabilities, providing a new degree of freedom for the development next‐generation integrated electronics optoelectronics. Herein, this work reports an transistor with high polarized photosensitivity MoS 2 /Ta NiS 5 /WSe double vdWH back‐to‐back type‐I band alignment. It demonstrates noticeable negative differential transconductance ultrahigh peak‐to‐valley ratio 4.3 × 10 4 bidirectional variation from 41.6 to −17.5 nS when V D = V. is ascribed effective gate‐modulation reversed edge bending at interfaces. Additionally, structure benefits photogating effect anisotropic Ta interlayer, achieving peak responsivity 120.58 A W −1 decent specific detectivity 2.65 12 Jones g exhibiting exceptional photocurrent 15.31 via photovoltaic under 635 nm light. These findings not only expand potential applications advanced material but also offer valuable insights optoelectronic devices leveraging vdWHs.

Язык: Английский

Процитировано

4