The
accelerated
advancements
in
nanophotonic
technologies
have
amplified
the
requirements
for
optoelectronic
devices.
These
now
encompass
need
compact
design,
rapid
operation,
enhanced
efficiency,
and
reduced
power
consumption.
Meeting
these
evolving
demands
necessitates
development
of
innovative
material
frameworks
aligned
with
emerging
technological
standards.
In
this
context,
we
unveil
our
latest
research
findings,
accentuating
exploitation
low-dimensional
materials
to
pioneer
photodetector
electro-optic
modulator
functionalities.
Drawing
from
emergent
field
'strainoptronics'
work
elucidates
its
capability
modulate
a
variety
properties:
bandgap,
function,
mobility.
Moreover,
harnessing
principles
scaling-length
theory,
chart
progression
empirical
outcomes
related
high
gain-bandwidth
product
photodetectors.
This
encompasses
amalgamation
metal
slot
silicon
photonic
waveguide
aimed
at
refining
carrier-lifetime-to-transit
time
ratio.
Additionally,
2D
PN
junction
photodetector,
operable
zero
bias,
emerges
as
vanguard
curtailing
dark
currents,
resulting
remarkably
efficient
noise-equivalent
outputs.
Furthermore,
recognizing
surging
interest
wearable
technology,
also
delves
into
integration
flexible
substrates.
We
elucidate
symbiotic
relationship
between
innovations
Photonic
Integrated
Circuits
(PICs),
highlighting
potential
developments
serve
foundational
building
blocks
next
generation
compact,
efficient,
integrative
PICs.
Our
presents
confluence
approaches
amalgamations,
poised
redefine
device
performance
tandem
contemporary
paradigms
dynamic
landscape
technology
integrated
circuits.
Nano-Micro Letters,
Год журнала:
2024,
Номер
16(1)
Опубликована: Фев. 16, 2024
Due
to
the
constraints
imposed
by
physical
effects
and
performance
degradation,
silicon-based
chip
technology
is
facing
certain
limitations
in
sustaining
advancement
of
Moore's
law.
Two-dimensional
(2D)
materials
have
emerged
as
highly
promising
candidates
for
post-Moore
era,
offering
significant
potential
domains
such
integrated
circuits
next-generation
computing.
Here,
this
review,
progress
2D
semiconductors
process
engineering
various
electronic
applications
are
summarized.
A
careful
introduction
material
synthesis,
transistor
focused
on
device
configuration,
dielectric
engineering,
contact
integration
given
first.
Then
transistors
including
digital
analog
circuits,
heterogeneous
chips,
sensing
discussed.
Moreover,
several
(artificial
intelligence
chips
quantum
chips)
based
specific
mechanism
devices
introduced.
Finally,
challenges
encountered
achieving
circuit-level
or
system-level
analyzed,
development
pathways
roadmaps
further
speculated
outlooked.
Advanced Functional Materials,
Год журнала:
2024,
Номер
34(29)
Опубликована: Март 19, 2024
Abstract
Two‐dimensional
(2D)
transition
metal
dichalcogenides
(TMDCs)
have
gained
much
attention
due
to
their
excellent
electronic
and
optoelectronic
properties.
The
reasonable
band
gap,
higher
light‐matter
interaction,
hundreds
of
categories
as
well
wafer‐scale
growth
Si‐compatible
fabrication
etc.
proof
immense
potential
for
next‐generation
solar
cells.
Over
the
past
years,
a
variety
specific
device
structure
are
investigated
including
multi‐field
tunable
2D
TMDCs‐based
photovoltaic
cell
since
its
is
easily
tunable.
Their
work
function
distributes
in
wide
range
which
facilitate
interfacial
modulation
optimize
electron/hole
transfer
layer
perovskite‐/organic‐based
cell.
In
this
review,
recent
developments
TMDCs
comprehensively
described.
First,
energy
diagram
traditional
semiconductor
TDMCs
discussed.
Then,
introduced
considering
homojunction,
heterojunction
Schottky‐junction
tunability.
Third,
role
photosensitive
modifying
silicon‐based
cells,
applications
cells
summarized
or
active
layer.
Lastly,
prospect
future
materials,
process
trends
practical
presented.
Journal of Semiconductors,
Год журнала:
2025,
Номер
46(1), С. 011602 - 011602
Опубликована: Янв. 1, 2025
Abstract
Infrared
optoelectronic
sensing
is
the
core
of
many
critical
applications
such
as
night
vision,
health
and
medication,
military,
space
exploration,
etc.
Further
including
mechanical
flexibility
a
new
dimension
enables
novel
features
adaptability
conformability,
promising
for
developing
next-generation
sensory
toward
reduced
size,
weight,
price,
power
consumption,
enhanced
performance
(SWaP
3
).
However,
in
this
emerging
research
frontier,
challenges
persist
simultaneously
achieving
high
infrared
response
good
deformability
devices
integrated
systems.
Therefore,
we
perform
comprehensive
review
design
strategies
insights
flexible
sensors,
fundamentals
photodetectors,
selection
materials
device
architectures,
fabrication
techniques
strategies,
discussion
architectural
functional
integration
towards
wearable
optoelectronics
advanced
image
sensing.
Finally,
article
offers
into
future
directions
to
practically
realize
ultra-high
smart
sensors
enabled
by
infrared-sensitive
materials,
covering
development
micro-/nanofabrication.
Benchmarks
scaling
these
across
fabrication,
performance,
are
presented,
alongside
perspectives
on
potential
medication
health,
biomimetic
neuromorphic
systems,
Nano-Micro Letters,
Год журнала:
2024,
Номер
16(1)
Опубликована: Янв. 23, 2024
Abstract
Transition
metal
dichalcogenides
(TMDs)
are
a
promising
class
of
layered
materials
in
the
post-graphene
era,
with
extensive
research
attention
due
to
their
diverse
alternative
elements
and
fascinating
semiconductor
behavior.
Binary
MX
2
layers
different
and/or
chalcogen
have
similar
structural
parameters
but
varied
optoelectronic
properties,
providing
opportunities
for
atomically
substitutional
engineering
via
partial
alteration
or/and
chalcogenide
atoms
produce
ternary
or
quaternary
TMDs.
The
resulting
multinary
TMD
still
maintain
integrity
homogeneity
while
achieving
tunable
(opto)electronic
properties
across
full
range
composition
arbitrary
ratios
introduced
original
counterparts
(0–100%).
Atomic
substitution
offers
new
adjustable
degrees
freedom
tailoring
crystal
phase,
band
alignment/structure,
carrier
density,
surface
reactive
activity,
enabling
novel
applications.
This
review
comprehensively
elaborates
on
layers,
including
theoretical
foundations,
synthetic
strategies,
tailored
superior
emerging
type
TMDs,
Janus
is
presented
specifically
highlight
typical
compounds,
fabrication
methods,
potential
Finally,
challenges
further
development
TMDs
envisioned
expedite
evolution
this
pivotal
field.
ACS Applied Materials & Interfaces,
Год журнала:
2024,
Номер
16(5), С. 6152 - 6161
Опубликована: Янв. 25, 2024
Mid-
and
far-infrared
photodetectors
that
can
operate
at
room
temperature
are
essential
for
both
civil
military
applications.
However,
the
widespread
use
of
mid-to-far-infrared
photonic
technology
faces
challenges
due
to
need
low-temperature
cooling
existing
commercial
semiconductors
limited
optical
absorption
efficiency
two-dimensional
materials.
We
have
utilized
photothermoelectric
effect
fabricate
a
self-powered,
broadband,
high-performance
photodetector
based
on
one-dimensional
tellurium
nanorod
array
film.
The
device
surpasses
energy
band
gap
limitations,
functioning
even
wavelengths
up
approximately
10,600
nm.
In
particular,
detectivity
reach
4.8
×
10
Advanced Physics Research,
Год журнала:
2025,
Номер
unknown
Опубликована: Фев. 5, 2025
Abstract
Magnetic
2D
materials
have
gotten
significant
attention
due
to
their
unique
low‐dimensional
magnetism
and
potential
applications
in
advanced
spintronics,
providing
an
perfect
platform
for
investigating
magnetic
properties
at
the
limit.
The
chemical
vapor
deposition
(CVD),
known
its
simplicity
strong
controllability,
has
become
a
key
technique
fabricating
ultrathin
nanosheets.
This
article
systematically
reviews
recent
advancements
CVD‐grown
materials,
focusing
on
effects
of
growth
parameters
material
morphologies
properties,
analyzing
construction
heterostructures
role
regulation.
In
addition,
various
characterization
methods
are
introduced,
these
spintronic
devices
discussed.
By
summarizing
current
challenges,
provides
insights
into
future
research
directions,
emphasizing
need
improve
stability,
Curie
temperature,
scalable
synthesis
enable
practical
materials.
Materials Horizons,
Год журнала:
2023,
Номер
10(11), С. 5099 - 5109
Опубликована: Янв. 1, 2023
Anomalous
negative
phototransistors
have
emerged
as
a
distinct
research
area,
characterized
by
decrease
in
channel
current
under
light
illumination.
Recently,
their
potential
applications
been
expanded
beyond
photodetection.
Despite
the
considerable
attention
given
to
phototransistors,
photoconductance
(NPC)
particular
remains
relatively
unexplored,
with
limited
advancements
compared
well-established
positive
phototransistors.
In
this
study,
we
designed
ferroelectric
field-effect
transistors
(FeFETs)
based
on
WSe2/CIPS
van
der
Waals
(vdW)
vertical
heterostructures
buried-gated
architecture.
The
transistor
exhibits
NPC
and
(PPC),
demonstrating
significant
role
of
polarization
distinctive
photoresponse.
observed
inverse
can
be
attributed
dynamic
switching
interfacial
charge
transfer
processes,
which
investigated
experimentally
theoretically
using
Density
Functional
Theory
(DFT).
unique
phenomena
enable
coexistence
controllable
polarity-switchable
PPC
NPC.
novel
feature
holds
tremendous
for
optical
encryption,
where
specific
gate
voltages
serve
universal
keys
achieve
modulation
conductivity.
ability
manipulate
conductivity
response
stimuli
opens
up
new
avenues
developing
secure
communication
systems
data
storage
technologies.
Harnessing
enables
design
advanced
encryption
schemes
that
rely
properties
our
material
system.
study
not
only
advances
development
but
also
paves
way
more
robust
efficient
methods
ensuring
confidentiality
integrity
critical
information
various
domains,
including
transmission,
security.
