The
accelerated
advancements
in
nanophotonic
technologies
have
amplified
the
requirements
for
optoelectronic
devices.
These
now
encompass
need
compact
design,
rapid
operation,
enhanced
efficiency,
and
reduced
power
consumption.
Meeting
these
evolving
demands
necessitates
development
of
innovative
material
frameworks
aligned
with
emerging
technological
standards.
In
this
context,
we
unveil
our
latest
research
findings,
accentuating
exploitation
low-dimensional
materials
to
pioneer
photodetector
electro-optic
modulator
functionalities.
Drawing
from
emergent
field
'strainoptronics'
work
elucidates
its
capability
modulate
a
variety
properties:
bandgap,
function,
mobility.
Moreover,
harnessing
principles
scaling-length
theory,
chart
progression
empirical
outcomes
related
high
gain-bandwidth
product
photodetectors.
This
encompasses
amalgamation
metal
slot
silicon
photonic
waveguide
aimed
at
refining
carrier-lifetime-to-transit
time
ratio.
Additionally,
2D
PN
junction
photodetector,
operable
zero
bias,
emerges
as
vanguard
curtailing
dark
currents,
resulting
remarkably
efficient
noise-equivalent
outputs.
Furthermore,
recognizing
surging
interest
wearable
technology,
also
delves
into
integration
flexible
substrates.
We
elucidate
symbiotic
relationship
between
innovations
Photonic
Integrated
Circuits
(PICs),
highlighting
potential
developments
serve
foundational
building
blocks
next
generation
compact,
efficient,
integrative
PICs.
Our
presents
confluence
approaches
amalgamations,
poised
redefine
device
performance
tandem
contemporary
paradigms
dynamic
landscape
technology
integrated
circuits.
A
van
der
Waals
(vdW)
heterostructure
is
formed
by
combining
multiple
materials
through
vdW
bonds.
It
can
combine
the
advantages
of
electronic,
optical,
thermal,
and
magnetic
properties
different
2D
has
potential
to
develop
into
next
generation
high-performance
functional
devices.
Herein,
current
research
advances
heterostructures
are
reviewed.
First,
fabrication
methods
physical
structures
summarized.
The
2D/nD
(n
=
0,1,2,3)
mixed-dimensional
discussed
in
detail.
Second,
a
new
type
introduced
based
on
two-dimensional
electron
gas
with
nanoscale
junction
interface.
Finally,
application
prospects
photoelectric
memory
devices
further
outlined
combing
applications
neural
networks.
This
review
shows
that
have
great
high
integration,
energy
harvesting,
logical
operations,
it
provides
directions
suggestions
for
future
environmentally
friendly,
high-performance,
smart
Nano-Micro Letters,
Год журнала:
2024,
Номер
16(1)
Опубликована: Авг. 9, 2024
Abstract
Two-dimensional
(2D)
transition
metal
dichalcogenides
(TMDs)
allow
for
atomic-scale
manipulation,
challenging
the
conventional
limitations
of
semiconductor
materials.
This
capability
may
overcome
short-channel
effect,
sparking
significant
advancements
in
electronic
devices
that
utilize
2D
TMDs.
Exploring
dimension
and
performance
limits
transistors
based
on
TMDs
has
gained
substantial
importance.
review
provides
a
comprehensive
investigation
into
these
single
2D-TMD
transistor.
It
delves
impacts
miniaturization,
including
reduction
channel
length,
gate
source/drain
contact
dielectric
thickness
transistor
operation
performance.
In
addition,
this
detailed
analysis
parameters
such
as
resistance,
subthreshold
swing,
hysteresis
loop,
carrier
mobility,
on/off
ratio,
development
p-type
logic
transistors.
details
two
logical
expressions
transistor,
current
voltage.
also
emphasizes
role
TMD-based
memory
devices,
focusing
enhancing
speed,
endurance,
data
retention,
extinction
well
reducing
energy
consumption
functioning
artificial
synapses.
demonstrates
calculating
methods
dynamic
synaptic
devices.
not
only
summarizes
state
art
field
but
highlights
potential
future
research
directions
applications.
underscores
anticipated
challenges,
opportunities,
solutions
navigating
boundaries
Advanced Functional Materials,
Год журнала:
2023,
Номер
34(15)
Опубликована: Июль 12, 2023
Abstract
Molybdenum
disulfide
(MoS
2
)
based
memristor
presents
intriguing
chance
for
the
implementation
bio‐inspired
artificial
synapse
and
neural
interactions.
However,
electrical
properties
of
intrinsic
MoS
single‐crystal
film
suffer
from
inevitable
lattice
defects
or
structure
vacancies
as
well
restraining
reliable
resistive
switching
mechanism.
Here,
a
fundamental
study
on
tunable
p‐type
doping
in
by
controllable
oxygen
passivation
is
reported.
In
situ
KPFM
measurements
reveal
near‐linear
increase
Fermi‐level
energy.
The
TiN/O‐MoS
exhibits
surprising
bipolar
feature,
revealing
an
interesting
transition
between
rectification‐mediated
conduction‐mediated
characteristics
means
surficial
kinetics.
window
demonstrates
nearly
symmetric
SET
RESET
domain
capability
to
analog
programming
conductance.
Moreover,
memristor,
accuracy
up
94%
MINST
recognition
ensures
network
LTP/LTD
behaviors.
This
as‐prepared
capable
mimicking
synaptic
feature
through
regulated
mechanics
electrode
contact
interaction,
which
can
be
up‐and‐coming
strategy
bio‐realistic
electronics.
Applied Physics Letters,
Год журнала:
2023,
Номер
122(10)
Опубликована: Март 6, 2023
Self-powered
near-infrared
detectors
that
can
work
without
an
external
power
source
underpin
important
applications
in
versatile
fields.
Herein,
a
self-powered
(NIR)
detector
with
metal–semiconductor–metal
structure
was
fabricated
by
mounting
hydrothermal
synthesized
Te
microwire
onto
Ti
electrodes.
Under
1550
nm
illumination,
the
exhibits
responsivity
of
3.47
×
105
V/W
and
170
mA/W
detectivity
4
109
Jones
at
room
temperature.
Such
competitive
performance
be
attributed
to
built-in
electric
fields
induced
asymmetric
Schottky
barrier.
Moreover,
benefiting
from
highly
anisotropic
microwire,
polarization
dichroic
ratio
device
under
irradiation
reach
up
2.1.
This
provided
facile
strategy
realize
polarization-sensitive
detection
wide
temperature
range.
ACS Nano,
Год журнала:
2024,
Номер
18(5), С. 4320 - 4328
Опубликована: Янв. 26, 2024
Applying
a
drain
bias
to
strongly
gate-coupled
semiconductor
influences
the
carrier
density
of
channel.
However,
practical
applications
this
drain-bias-induced
effect
in
advancement
switching
electronics
have
remained
elusive
due
limited
capabilities
its
current
modulation
known
date.
Here,
we
show
strategies
largely
control
by
utilizing
type
an
ambipolar
molybdenum
disulfide
(MoS2)
field-effect
transistor
with
Pt
bottom
contacts.
Our
CMOS-compatible
device
architecture,
incorporating
partially
p–n
junction,
achieves
multifunctionality.
The
MoS2
operates
as
(on/off
ratios
exceeding
107
for
both
NMOS
and
PMOS),
rectifier
(rectification
ratio
∼3
×
106),
reversible
negative
breakdown
diode
adjustable
voltage
109
maximum
high
10–4
A),
photodetector.
Finally,
demonstrate
complementary
inverter
(gain
∼24
at
Vdd
=
1.5
V),
which
is
highly
facile
fabricate
without
need
complex
heterostructures
doping
processes.
study
provides
achieve
high-performance
devices
effectively
utilize
electrical
switching.
