ACS Applied Electronic Materials,
Год журнала:
2024,
Номер
7(1), С. 489 - 499
Опубликована: Дек. 23, 2024
A
flexible
ITO/ZnO/TiOx/ITO
memristor
has
been
confirmed
to
be
a
suitable
candidate
for
nociceptors
by
demonstrating
all
of
the
typical
nociceptive
characteristics.
The
annealing
effect
on
synapse
is
explored
using
different
time
variants
invisible
(above
90%
transparency
in
visible
region)
device.
10
min
annealed
device
found
one
its
bipolar
nonvolatile
gradual
switching
with
over
3000
cycles
endurance
and
>104
s
retention.
Device-to-device
uniformity
reproducibility
have
achieved
narrow
distribution
set,
reset,
forming
voltages.
Synaptic
behaviors
like
long-term
potentiation
depression
800
nearly
linear
potentiation-depression
nonlinearity
(Np/Nd
=
3/0.3),
as
well
short-term
plasticity,
make
it
capable
neuromorphic
computing
applications.
Advanced Functional Materials,
Год журнала:
2024,
Номер
unknown
Опубликована: Сен. 2, 2024
Abstract
To
achieve
cost‐effectiveness,
researchers
are
exploring
various
memristors
for
their
adaptation
in
neuromorphic
computing.
Recent
studies
have
focused
on
developing
versatile
functioning
singular
memristors,
such
as
those
involved
on‐receptor
computing,
which
integrates
sensory
functions
into
current
computing
paradigms.
Additionally,
adaptations
like
reservoir
being
investigated
systems.
In
this
study,
a
memristor
composed
of
stack
Ti/NbO
x
/Pt
layers
is
fabricated
to
explore
multifunctional
behaviors
within
single
memristor.
By
applying
bias
toward
the
top
Ti
electrode,
gradual
changes
with
volatile
features
demonstrated,
revealing
an
ion‐migration‐based
nonfilamentary
switching
Leveraging
functionality,
artificial
nociceptor
first
implemented,
demonstrating
key
biological
nociceptors
including
thresholding,
relaxation,
no‐adaptation,
and
sensitization.
Subsequently,
synapse
emulation
akin
brain
achieved
through
easy
conductance
potentiation
depression
diverse
functions,
enabling
mimic
learning
activities
spike
firing.
Lastly,
computational
applications
explored
by
adapting
edge
multi‐bit
expanding
memristor's
across
fields
behaviors.
Understanding
the
resistive
switching
(RS)
behavior
of
oxide-based
memory
devices
at
nanoscale
is
crucial
for
advancement
high-integration
density
in-memory
computing
platforms.
This
study
explores
a
comprehensive
growth
parameter
space
to
address
RS
pulsed-laser-deposited
substoichiometric
TiO2
(TiOx)
thin
films
in
search
tailored
memristors
with
low-power
consumption
and
high
stability.
Conductive-atomic-force-microscopy-based
measurements
facilitate
deciphering
nanoscale,
providing
direct
avenue
understand
microstructure-property
relationships.
The
present
investigation
reveals
that
rutile
TiOx
an
optimal
stoichiometric
configuration
exhibits
superior
attributes,
enabling
forming-free,
low-power,
highly
stable
functionalities
nanoscale.
By
contrast,
expected
formation
Magnéli
phase
within
defective
as-grown
film
hinders
occurrence
switching.
Detailed
analyses
yield
parametric
diagram,
valuable
insights
predict
parameters
fabricating
on-demand
TiOx-based
devices.
As
bulk
attributes
do
not
always
translate
seamlessly
leads
pathway
develop
electronics
promoting
their
integration
into
ultrahigh-density,
low-energy-consuming
advanced
technologies
across
diverse
disciplines
including
robotics,
data
storage,
sensing.
Advanced Functional Materials,
Год журнала:
2025,
Номер
unknown
Опубликована: Фев. 19, 2025
Abstract
In
this
study,
a
highly
rectifying
memristor
composed
of
Pt/TaO
x
/TiN
stack,
incorporating
complementary
metal‐oxide
semiconductor‐friendly
metal
oxide
switching
layer,
is
fabricated
to
assess
its
performance
in
diverse
range
applications.
The
exhibits
characteristics
due
the
Schottky
barrier
formed
by
work
function
difference
between
Pt
and
TiN
electrodes.
For
compliance
current
1
mA,
displays
volatile
memory
properties,
attributed
migration
oxygen
ions
within
TaO
layer.
Leveraging
behavior,
synaptic
functions—where
changes
plasticity
occur
response
incoming
spikes—are
emulated.
Additionally,
complete
functions
biological
nociceptor
are
demonstrated,
including
threshold,
relaxation,
no‐adaptation,
sensitization,
recovery.
These
dynamic
then
utilized
mimic
neuronal
firing
with
array,
Morse
code
implementation
enabling
data
generation,
computing
through
cost‐effective
reservoir
computing.
simplicity
fabrication
process
broad
implemented
single
make
device
promising
candidate
for
future
Nanoscale,
Год журнала:
2024,
Номер
16(32), С. 15330 - 15342
Опубликована: Янв. 1, 2024
The
increasing
demand
for
energy-efficient
data
processing
leads
to
a
growing
interest
in
neuromorphic
computing
that
aims
emulate
cerebral
functions.
This
approach
offers
cost-effective
and
rapid
parallel
processing,
surpassing
the
limitations
of
conventional
von
Neumann
architecture.
Key
this
emulation
is
development
memristors
mimic
biological
synapses.
Recently,
research
efforts
have
focused
on
incorporation
nociceptors-sensory
neurons
capable
detecting
external
stimuli-into
applications
robotics
artificial
intelligence.
integration
enables
adapt
various
circumstances
while
remaining
cost-effective.
A
nonfilamentary
gradual
resistive
switching
memristor
utilized
implement
nociceptor
synaptic
behaviors.
fabricated
Pt/indium
gallium
zinc
oxide
(IGZO)/SnO
