Stacking-dependent and electric field-driven electronic properties and band alignment transitions in γ-GeSe/Ga2SSe heterostructures: a first-principles study DOI

Nguyen V. Vinh,

Dung V. Lu, Khang D. Pham

и другие.

Nanoscale Advances, Год журнала: 2024, Номер unknown

Опубликована: Дек. 12, 2024

In this work, we present a comprehensive investigation into the electronic properties and contact behavior of γ-GeSe/Ga 2 SSe heterostructures using first-principles calculations.

Язык: Английский

Advanced surface engineering of TZO nanostructures via irradiation technique for enhanced nitric oxide (NO) gas sensitivity DOI
G. Yergaliuly,

Abylay Tangirbergen,

Almаgul Mentbayeva

и другие.

Applied Surface Science Advances, Год журнала: 2025, Номер 27, С. 100736 - 100736

Опубликована: Март 24, 2025

Язык: Английский

Процитировано

1
High-efficiency photocatalyst and high-response ultraviolet photodetector based on the Ga2SSe@GaN heterojunctions DOI
Ke Qin, Enling Li, Yang Shen

и другие.

Surfaces and Interfaces, Год журнала: 2024, Номер 52, С. 104996 - 104996

Опубликована: Авг. 23, 2024

Язык: Английский

Процитировано

6
Direct Z-scheme CdTe/g-C3N4 van der Waals heterojunction for enhanced solar-to-hydrogen efficiency and spontaneous photocatalytic water splitting DOI

Yi Li,

Xin Qiu, Cheng Gong

и другие.

Molecular Catalysis, Год журнала: 2025, Номер 582, С. 115170 - 115170

Опубликована: Апрель 30, 2025

Язык: Английский

Процитировано

0
van der Waals ZnO/HfSn2N4 Heterojunction with Exceptional Photoresponse for Photodetectors DOI
Yang Shen, Xiaoyu Zhao, Zhen Cui

и другие.

ACS Applied Materials & Interfaces, Год журнала: 2024, Номер 16(43), С. 58802 - 58810

Опубликована: Окт. 21, 2024

Two-dimensional van der Waals heterojunctions represent a promising avenue for spectrum of optoelectronic endeavors. Nonetheless, their deployment has been somewhat constrained by the suboptimal efficiency photocurrent generated. In this article, ZnO/HfSn2N4 heterojunction is proposed to achieve high photoresponse efficiency. First-principles calculations are utilized confirm that possesses thermal stability with direct bandgap (1.36 eV). It exhibits light absorption coefficient and carrier mobility (2.51 × 103 cm2 V-1 s-1), biaxial strain significant effect on modulation band structure. As tensile increases, changes nonlinearly, transitioning from type-II type-I heterojunction. When compressive decreases. Quantum transport simulations employed calculate density states transmission model, verifying its excellent (a peak reaching 4.93 a02/photon an extinction ratio 75.1). shows potentially efficient photodetector.

Язык: Английский

Процитировано

3
First-principles investigation of the ZnO/TiSn2N4 heterojunction: A promising photoresponse material for high-performance photodetectors DOI
Yang Shen, Xiaoyu Zhao, Zhen Cui

и другие.

Applied Surface Science, Год журнала: 2024, Номер unknown, С. 162193 - 162193

Опубликована: Дек. 1, 2024

Язык: Английский

Процитировано

3
Stacking-dependent and electric field-driven electronic properties and band alignment transitions in γ-GeSe/Ga2SSe heterostructures: a first-principles study DOI

Nguyen V. Vinh,

Dung V. Lu, Khang D. Pham

и другие.

Nanoscale Advances, Год журнала: 2024, Номер unknown

Опубликована: Дек. 12, 2024

In this work, we present a comprehensive investigation into the electronic properties and contact behavior of γ-GeSe/Ga 2 SSe heterostructures using first-principles calculations.

Язык: Английский

Процитировано

1