Stacking-dependent and electric field-driven electronic properties and band alignment transitions in γ-GeSe/Ga2SSe heterostructures: a first-principles study DOI

Nguyen V. Vinh,

Dung V. Lu, Khang D. Pham

et al.

Nanoscale Advances, Journal Year: 2024, Volume and Issue: unknown

Published: Dec. 12, 2024

In this work, we present a comprehensive investigation into the electronic properties and contact behavior of γ-GeSe/Ga 2 SSe heterostructures using first-principles calculations.

Language: Английский

Advanced surface engineering of TZO nanostructures via irradiation technique for enhanced nitric oxide (NO) gas sensitivity DOI
G. Yergaliuly,

Abylay Tangirbergen,

Almаgul Mentbayeva

et al.

Applied Surface Science Advances, Journal Year: 2025, Volume and Issue: 27, P. 100736 - 100736

Published: March 24, 2025

Language: Английский

Citations

1
High-efficiency photocatalyst and high-response ultraviolet photodetector based on the Ga2SSe@GaN heterojunctions DOI
Ke Qin, Enling Li, Yang Shen

et al.

Surfaces and Interfaces, Journal Year: 2024, Volume and Issue: 52, P. 104996 - 104996

Published: Aug. 23, 2024

Language: Английский

Citations

6
Direct Z-scheme CdTe/g-C3N4 van der Waals heterojunction for enhanced solar-to-hydrogen efficiency and spontaneous photocatalytic water splitting DOI

Yi Li,

Xin Qiu, Cheng Gong

et al.

Molecular Catalysis, Journal Year: 2025, Volume and Issue: 582, P. 115170 - 115170

Published: April 30, 2025

Language: Английский

Citations

0
van der Waals ZnO/HfSn2N4 Heterojunction with Exceptional Photoresponse for Photodetectors DOI
Yang Shen, Xiaoyu Zhao, Zhen Cui

et al.

ACS Applied Materials & Interfaces, Journal Year: 2024, Volume and Issue: 16(43), P. 58802 - 58810

Published: Oct. 21, 2024

Two-dimensional van der Waals heterojunctions represent a promising avenue for spectrum of optoelectronic endeavors. Nonetheless, their deployment has been somewhat constrained by the suboptimal efficiency photocurrent generated. In this article, ZnO/HfSn2N4 heterojunction is proposed to achieve high photoresponse efficiency. First-principles calculations are utilized confirm that possesses thermal stability with direct bandgap (1.36 eV). It exhibits light absorption coefficient and carrier mobility (2.51 × 103 cm2 V-1 s-1), biaxial strain significant effect on modulation band structure. As tensile increases, changes nonlinearly, transitioning from type-II type-I heterojunction. When compressive decreases. Quantum transport simulations employed calculate density states transmission model, verifying its excellent (a peak reaching 4.93 a02/photon an extinction ratio 75.1). shows potentially efficient photodetector.

Language: Английский

Citations

3
First-principles investigation of the ZnO/TiSn2N4 heterojunction: A promising photoresponse material for high-performance photodetectors DOI
Yang Shen, Xiaoyu Zhao, Zhen Cui

et al.

Applied Surface Science, Journal Year: 2024, Volume and Issue: unknown, P. 162193 - 162193

Published: Dec. 1, 2024

Language: Английский

Citations

3
Stacking-dependent and electric field-driven electronic properties and band alignment transitions in γ-GeSe/Ga2SSe heterostructures: a first-principles study DOI

Nguyen V. Vinh,

Dung V. Lu, Khang D. Pham

et al.

Nanoscale Advances, Journal Year: 2024, Volume and Issue: unknown

Published: Dec. 12, 2024

In this work, we present a comprehensive investigation into the electronic properties and contact behavior of γ-GeSe/Ga 2 SSe heterostructures using first-principles calculations.

Language: Английский

Citations

1