Optics Express,
Год журнала:
2024,
Номер
32(27), С. 48858 - 48858
Опубликована: Дек. 8, 2024
We
present
a
high-performance
Ge/Si
PIN
photodetector
that
leverages
the
advanced
hetero-bonding
method.
The
sputtered
microcrystalline
Ge
is
utilized
as
interlayer,
in
conjunction
with
Smart-Cut
technology,
to
fabricate
high-quality
Si-based
films.
exfoliated
film
exhibits
surface
roughness
of
0.196
nm
and
full
width
at
half
maximum
XRD
peak
merely
70
arcseconds,
which
much
lower
than
epitaxial
ones.
photodetectors
based
on
films
are
systematically
optimized
analyzed,
particular
emphasis
effects
crystal
quality
interlayer
thickness
device
performance.
2
nm-thick
demonstrates
dark
current
density
32.8
mA/cm2
bias
-1
V,
accompanied
by
an
ideality
factor
low
1.33.
At
wavelength
1310
nm,
achieves
responsivity
0.61
A/W,
devices
featuring
13
µm-diameter
mesa
exhibited
high
3
dB
bandwidth
24.3
GHz.
technology
effectively
facilitates
integration
onto
Si
platforms,
offering
substantial
potential
for
diverse
array
applications.
ACS Applied Electronic Materials,
Год журнала:
2025,
Номер
7(1), С. 512 - 519
Опубликована: Янв. 3, 2025
β-Ga2O3-based
MOSFETs
hold
significant
promise
for
high-power
device
applications
due
to
their
wide
band
gap
and
high
breakdown
voltage.
However,
the
direct
integration
of
β-Ga2O3
on
silicon
substrates
is
challenged
by
lattice
thermal
expansion
mismatches,
which
degrade
performance.
This
work
explores
use
an
aluminum
nitride
(AlN)
buffer
layer
mitigate
these
issues,
offering
improved
structural
quality
enhanced
electrical
We
demonstrate
growth
β-Ga2O3/AlN/Si
films
using
metal–organic
chemical
vapor
deposition,
where
introduction
AlN
significantly
promotes
(−201)
orientation,
lacks
in
β-Ga2O3/Si
films,
as
confirmed
XRD
analysis.
The
presence
evidenced
SEM
micrographs
XPS
depth
profile.
exhibit
a
maximum
drain
current
(IDS)
52
mA/mm,
remarkable
on/off
ratio
∼108
voltage
(Vbr)
178
V,
surpassing
performance
MOSFETs,
showed
IDS
45
mA/mm
Vbr
106
V.
These
results
underscore
potential
layers
advancing
reliability
transistors
silicon,
paving
way
next-generation
power
electronics.
Electronics,
Год журнала:
2024,
Номер
13(7), С. 1234 - 1234
Опубликована: Март 27, 2024
During
the
past
decade,
Gallium
Oxide
(Ga2O3)
has
attracted
intensive
research
interest
as
an
ultra-wide-bandgap
(UWBG)
semiconductor
due
to
its
unique
characteristics,
such
a
large
bandgap
of
4.5–4.9
eV,
high
critical
electric
field
~8
MV/cm,
and
Baliga’s
figure
merit
(BFOM).
Unipolar
β-Ga2O3
devices
Schottky
barrier
diodes
(SBDs)
field-effect
transistors
(FETs)
have
been
demonstrated.
Recently,
there
growing
attention
toward
developing
β-Ga2O3-based
heterostructures
heterojunctions,
which
is
mainly
driven
by
lack
p-type
doping
exploration
multidimensional
device
architectures
enhance
power
electronics’
performance.
This
paper
will
review
most
recent
advances
in
heterojunctions
for
electronics,
including
NiOx/β-Ga2O3,
β-(AlxGa1−x)2O3/β-Ga2O3,
heterojunctions/heterostructures
with
other
wide-
materials
integration
two-dimensional
(2D)
β-Ga2O3.
Discussions
deposition,
fabrication,
operating
principles
these
associated
performance
be
provided.
comprehensive
serve
reference
researchers
engaged
science,
semiconductors,
electronics
benefits
future
study
development
electronics.
Materials Today Physics,
Год журнала:
2024,
Номер
45, С. 101463 - 101463
Опубликована: Май 15, 2024
Orthorhombic
gallium
oxide
(κ-Ga2O3)
is
an
ultra-wide
bandgap
semiconductor
with
great
potential
in
new
generation
electronics.
Its
application
hindered
at
present
by
the
limited
physical
understanding
of
relationship
between
synthesis
and
functional
properties.
This
work
discusses
effects
growth
method
(metal-organic
vapour
phase
epitaxy
molecular
beam
epitaxy)
as
well
annealing
treatments
different
atmospheres
(O2,
H2)
on
point
defects
κ-Ga2O3
layers
epitaxially
grown
c-plane
sapphire.
Comprehensive
experimental
characterization
X-ray
diffraction,
photo
current-
photoluminescence
excitation
spectroscopy,
electron
spectroscopy
combined
first
principles
calculations
defects'
formation
complex-dissociation
energies.
We
demonstrate
that
for
concentration
shallow
deep
level
can
be
sensitively
controlled
through
temperatures
(T
=
500
°C)
below
thermal
stability
threshold
this
polymorph.
In
particular,
our
results
suggest
hydrogen-related
(e.g.,
H-interstitials,
Ga-vacancies—H
complexes)
play
a
key
role
process.
While
we
provide
direct
exemplary
implications
performances
based
photodetectors,
these
findings
are
predicted
to
impact
further
fields
κ-Ga2O3,
such
high
mobility
transistors
or
memory
devices.
Crystals,
Год журнала:
2024,
Номер
14(3), С. 268 - 268
Опубликована: Март 9, 2024
Resistive
metal/β-Ga2O3/metal
structures
with
different
interelectrode
distances
and
electrode
topologies
were
investigated.
The
oxide
films
deposited
by
radio-frequency
magnetron
sputtering
of
a
Ga2O3
(99.999%)
target
onto
an
unheated
sapphire
c-plane
substrate
(0001)
in
Ar/O2
gas
mixture.
are
sensitive
to
ultraviolet
radiation
wavelength
λ
=
254.
Structures
interdigital
topology
have
pronounced
persistent
conductivity.
It
is
shown
that
the
magnitude
responsivity,
response
time
τr,
recovery
τd
determined
concentration
free
holes
p
involved
recombination
processes.
For
first
time,
it
proposed
consider
hole
trapping
both
surface
states
Nts
at
metal/Ga2O3
interface
traps
bulk
film.
Journal of Physics Materials,
Год журнала:
2024,
Номер
7(3), С. 032002 - 032002
Опубликована: Май 30, 2024
Abstract
With
the
advancements
in
Web
of
Things,
Artificial
Intelligence,
and
other
emerging
technologies,
there
is
an
increasing
demand
for
artificial
visual
systems
to
perceive
learn
about
external
environments.
However,
traditional
sensing
computing
are
limited
by
physical
separation
sense,
processing,
memory
units
that
results
challenges
such
as
high
energy
consumption,
large
additional
hardware
costs,
long
latency
time.
Integrating
neuromorphic
functions
into
unit
effective
way
overcome
these
challenges.
Therefore,
it
extremely
important
design
devices
with
ability
properties
low
power
consumption
switching
speed
exploring
in-sensor
systems.
In
this
review,
we
provide
elementary
introduction
structures
two
common
optoelectronic
materials,
perovskites
transition
metal
dichalcogenides
(TMDs).
Subsequently,
discuss
fundamental
concepts
devices,
including
device
working
mechanisms.
Furthermore,
summarize
extensively
applications
TMDs
computing.
Finally,
propose
potential
strategies
address
offer
a
brief
outlook
on
application
materials
term
