Fabrication of high-performance Ge/Si PIN photodetector utilizing Ge/Si hetero-bonding with a microcrystalline Ge interlayer DOI Creative Commons
Jiahui Li,

Wenhao Meng,

Zhanren Wang

и другие.

Optics Express, Год журнала: 2024, Номер 32(27), С. 48858 - 48858

Опубликована: Дек. 8, 2024

We present a high-performance Ge/Si PIN photodetector that leverages the advanced hetero-bonding method. The sputtered microcrystalline Ge is utilized as interlayer, in conjunction with Smart-Cut technology, to fabricate high-quality Si-based films. exfoliated film exhibits surface roughness of 0.196 nm and full width at half maximum XRD peak merely 70 arcseconds, which much lower than epitaxial ones. photodetectors based on films are systematically optimized analyzed, particular emphasis effects crystal quality interlayer thickness device performance. 2 nm-thick demonstrates dark current density 32.8 mA/cm2 bias -1 V, accompanied by an ideality factor low 1.33. At wavelength 1310 nm, achieves responsivity 0.61 A/W, devices featuring 13 µm-diameter mesa exhibited high 3 dB bandwidth 24.3 GHz. technology effectively facilitates integration onto Si platforms, offering substantial potential for diverse array applications.

Язык: Английский

Effect of copper substitution on the structural, optical, and magnetic properties of β-Ga₂O₃ powders DOI
A. R. Suresh Babu,

N. Madhusudhana Rao

Applied Physics A, Год журнала: 2025, Номер 131(3)

Опубликована: Фев. 5, 2025

Язык: Английский

Процитировано

3

Performance Enhancement of MOCVD Grown β-Ga2O3 MOSFETs on Silicon Substrates via AlN Buffer Layer DOI

Anoop Kumar Singh,

Shi‐Ming Huang, Jun-Hong Shen

и другие.

ACS Applied Electronic Materials, Год журнала: 2025, Номер 7(1), С. 512 - 519

Опубликована: Янв. 3, 2025

β-Ga2O3-based MOSFETs hold significant promise for high-power device applications due to their wide band gap and high breakdown voltage. However, the direct integration of β-Ga2O3 on silicon substrates is challenged by lattice thermal expansion mismatches, which degrade performance. This work explores use an aluminum nitride (AlN) buffer layer mitigate these issues, offering improved structural quality enhanced electrical We demonstrate growth β-Ga2O3/AlN/Si films using metal–organic chemical vapor deposition, where introduction AlN significantly promotes (−201) orientation, lacks in β-Ga2O3/Si films, as confirmed XRD analysis. The presence evidenced SEM micrographs XPS depth profile. exhibit a maximum drain current (IDS) 52 mA/mm, remarkable on/off ratio ∼108 voltage (Vbr) 178 V, surpassing performance MOSFETs, showed IDS 45 mA/mm Vbr 106 V. These results underscore potential layers advancing reliability transistors silicon, paving way next-generation power electronics.

Язык: Английский

Процитировано

2

β-Ga2O3-Based Heterostructures and Heterojunctions for Power Electronics: A Review of the Recent Advances DOI Open Access
Dinusha Herath Mudiyanselage, Bingcheng Da,

Jayashree Adivarahan

и другие.

Electronics, Год журнала: 2024, Номер 13(7), С. 1234 - 1234

Опубликована: Март 27, 2024

During the past decade, Gallium Oxide (Ga2O3) has attracted intensive research interest as an ultra-wide-bandgap (UWBG) semiconductor due to its unique characteristics, such a large bandgap of 4.5–4.9 eV, high critical electric field ~8 MV/cm, and Baliga’s figure merit (BFOM). Unipolar β-Ga2O3 devices Schottky barrier diodes (SBDs) field-effect transistors (FETs) have been demonstrated. Recently, there growing attention toward developing β-Ga2O3-based heterostructures heterojunctions, which is mainly driven by lack p-type doping exploration multidimensional device architectures enhance power electronics’ performance. This paper will review most recent advances in heterojunctions for electronics, including NiOx/β-Ga2O3, β-(AlxGa1−x)2O3/β-Ga2O3, heterojunctions/heterostructures with other wide- materials integration two-dimensional (2D) β-Ga2O3. Discussions deposition, fabrication, operating principles these associated performance be provided. comprehensive serve reference researchers engaged science, semiconductors, electronics benefits future study development electronics.

Язык: Английский

Процитировано

9

Engineering shallow and deep level defects in κ-Ga2O3 thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments DOI Creative Commons
Piero Mazzolini, Joel B. Varley, A. Parisini

и другие.

Materials Today Physics, Год журнала: 2024, Номер 45, С. 101463 - 101463

Опубликована: Май 15, 2024

Orthorhombic gallium oxide (κ-Ga2O3) is an ultra-wide bandgap semiconductor with great potential in new generation electronics. Its application hindered at present by the limited physical understanding of relationship between synthesis and functional properties. This work discusses effects growth method (metal-organic vapour phase epitaxy molecular beam epitaxy) as well annealing treatments different atmospheres (O2, H2) on point defects κ-Ga2O3 layers epitaxially grown c-plane sapphire. Comprehensive experimental characterization X-ray diffraction, photo current- photoluminescence excitation spectroscopy, electron spectroscopy combined first principles calculations defects' formation complex-dissociation energies. We demonstrate that for concentration shallow deep level can be sensitively controlled through temperatures (T = 500 °C) below thermal stability threshold this polymorph. In particular, our results suggest hydrogen-related (e.g., H-interstitials, Ga-vacancies—H complexes) play a key role process. While we provide direct exemplary implications performances based photodetectors, these findings are predicted to impact further fields κ-Ga2O3, such high mobility transistors or memory devices.

Язык: Английский

Процитировано

9

Effect of Traps on the UV Sensitivity of Gallium Oxide-Based Structures DOI Creative Commons

V. M. Kalygina,

A. V. Tsymbalov, П. М. Корусенко

и другие.

Crystals, Год журнала: 2024, Номер 14(3), С. 268 - 268

Опубликована: Март 9, 2024

Resistive metal/β-Ga2O3/metal structures with different interelectrode distances and electrode topologies were investigated. The oxide films deposited by radio-frequency magnetron sputtering of a Ga2O3 (99.999%) target onto an unheated sapphire c-plane substrate (0001) in Ar/O2 gas mixture. are sensitive to ultraviolet radiation wavelength λ = 254. Structures interdigital topology have pronounced persistent conductivity. It is shown that the magnitude responsivity, response time τr, recovery τd determined concentration free holes p involved recombination processes. For first time, it proposed consider hole trapping both surface states Nts at metal/Ga2O3 interface traps bulk film.

Язык: Английский

Процитировано

3

Brain-computer interfaces inspired spiking neural network model for depression stage identification DOI

M. Angelin Ponrani,

Monika Anand, Mahmood Alsaadi

и другие.

Journal of Neuroscience Methods, Год журнала: 2024, Номер 409, С. 110203 - 110203

Опубликована: Июнь 15, 2024

Язык: Английский

Процитировано

3

Structure and properties of boron-implanted β-Ga2O3 monocrystals DOI
Alena Nikolskaya, Д. С. Королев, P. A. Yunin

и другие.

Vacuum, Год журнала: 2025, Номер 235, С. 114129 - 114129

Опубликована: Фев. 13, 2025

Язык: Английский

Процитировано

0

Morphological and Optical Tuning of β-Ga2O3 NRs/p-GaN/Sapphire via Precursor Concentration for High-Performance MSM UV Photodetector Application DOI

Aijaz Ali Soomro,

Sabah M. Mohammad, Naveed Afzal

и другие.

Optical Materials, Год журнала: 2025, Номер unknown, С. 116927 - 116927

Опубликована: Март 1, 2025

Язык: Английский

Процитировано

0

Thinking Laterally - Probing the Force Holding the Oxide Layer to a Liquid Metal Interface. DOI Creative Commons
Pierre H. A. Vaillant, Vaishnavi Krishnamurthi, Caiden J. Parker

и другие.

Surfaces and Interfaces, Год журнала: 2025, Номер unknown, С. 106576 - 106576

Опубликована: Апрель 1, 2025

Язык: Английский

Процитировано

0

In-sensor neuromorphic computing using perovskites and transition metal dichalcogenides DOI Creative Commons

Shen-Yi Li,

Ji-Tuo Li,

Kui Zhou

и другие.

Journal of Physics Materials, Год журнала: 2024, Номер 7(3), С. 032002 - 032002

Опубликована: Май 30, 2024

Abstract With the advancements in Web of Things, Artificial Intelligence, and other emerging technologies, there is an increasing demand for artificial visual systems to perceive learn about external environments. However, traditional sensing computing are limited by physical separation sense, processing, memory units that results challenges such as high energy consumption, large additional hardware costs, long latency time. Integrating neuromorphic functions into unit effective way overcome these challenges. Therefore, it extremely important design devices with ability properties low power consumption switching speed exploring in-sensor systems. In this review, we provide elementary introduction structures two common optoelectronic materials, perovskites transition metal dichalcogenides (TMDs). Subsequently, discuss fundamental concepts devices, including device working mechanisms. Furthermore, summarize extensively applications TMDs computing. Finally, propose potential strategies address offer a brief outlook on application materials term

Язык: Английский

Процитировано

2