Fabrication of high-performance Ge/Si PIN photodetector utilizing Ge/Si hetero-bonding with a microcrystalline Ge interlayer DOI Creative Commons
Jiahui Li,

Wenhao Meng,

Zhanren Wang

et al.

Optics Express, Journal Year: 2024, Volume and Issue: 32(27), P. 48858 - 48858

Published: Dec. 8, 2024

We present a high-performance Ge/Si PIN photodetector that leverages the advanced hetero-bonding method. The sputtered microcrystalline Ge is utilized as interlayer, in conjunction with Smart-Cut technology, to fabricate high-quality Si-based films. exfoliated film exhibits surface roughness of 0.196 nm and full width at half maximum XRD peak merely 70 arcseconds, which much lower than epitaxial ones. photodetectors based on films are systematically optimized analyzed, particular emphasis effects crystal quality interlayer thickness device performance. 2 nm-thick demonstrates dark current density 32.8 mA/cm2 bias -1 V, accompanied by an ideality factor low 1.33. At wavelength 1310 nm, achieves responsivity 0.61 A/W, devices featuring 13 µm-diameter mesa exhibited high 3 dB bandwidth 24.3 GHz. technology effectively facilitates integration onto Si platforms, offering substantial potential for diverse array applications.

Language: Английский

Effect of copper substitution on the structural, optical, and magnetic properties of β-Ga₂O₃ powders DOI
A. R. Suresh Babu,

N. Madhusudhana Rao

Applied Physics A, Journal Year: 2025, Volume and Issue: 131(3)

Published: Feb. 5, 2025

Language: Английский

Citations

3
Performance Enhancement of MOCVD Grown β-Ga2O3 MOSFETs on Silicon Substrates via AlN Buffer Layer DOI

Anoop Kumar Singh,

Shi‐Ming Huang, Jun-Hong Shen

et al.

ACS Applied Electronic Materials, Journal Year: 2025, Volume and Issue: 7(1), P. 512 - 519

Published: Jan. 3, 2025

β-Ga2O3-based MOSFETs hold significant promise for high-power device applications due to their wide band gap and high breakdown voltage. However, the direct integration of β-Ga2O3 on silicon substrates is challenged by lattice thermal expansion mismatches, which degrade performance. This work explores use an aluminum nitride (AlN) buffer layer mitigate these issues, offering improved structural quality enhanced electrical We demonstrate growth β-Ga2O3/AlN/Si films using metal–organic chemical vapor deposition, where introduction AlN significantly promotes (−201) orientation, lacks in β-Ga2O3/Si films, as confirmed XRD analysis. The presence evidenced SEM micrographs XPS depth profile. exhibit a maximum drain current (IDS) 52 mA/mm, remarkable on/off ratio ∼108 voltage (Vbr) 178 V, surpassing performance MOSFETs, showed IDS 45 mA/mm Vbr 106 V. These results underscore potential layers advancing reliability transistors silicon, paving way next-generation power electronics.

Language: Английский

Citations

2
β-Ga2O3-Based Heterostructures and Heterojunctions for Power Electronics: A Review of the Recent Advances DOI Open Access
Dinusha Herath Mudiyanselage, Bingcheng Da,

Jayashree Adivarahan

et al.

Electronics, Journal Year: 2024, Volume and Issue: 13(7), P. 1234 - 1234

Published: March 27, 2024

During the past decade, Gallium Oxide (Ga2O3) has attracted intensive research interest as an ultra-wide-bandgap (UWBG) semiconductor due to its unique characteristics, such a large bandgap of 4.5–4.9 eV, high critical electric field ~8 MV/cm, and Baliga’s figure merit (BFOM). Unipolar β-Ga2O3 devices Schottky barrier diodes (SBDs) field-effect transistors (FETs) have been demonstrated. Recently, there growing attention toward developing β-Ga2O3-based heterostructures heterojunctions, which is mainly driven by lack p-type doping exploration multidimensional device architectures enhance power electronics’ performance. This paper will review most recent advances in heterojunctions for electronics, including NiOx/β-Ga2O3, β-(AlxGa1−x)2O3/β-Ga2O3, heterojunctions/heterostructures with other wide- materials integration two-dimensional (2D) β-Ga2O3. Discussions deposition, fabrication, operating principles these associated performance be provided. comprehensive serve reference researchers engaged science, semiconductors, electronics benefits future study development electronics.

Language: Английский

Citations

9
Engineering shallow and deep level defects in κ-Ga2O3 thin films: comparing metal-organic vapour phase epitaxy to molecular beam epitaxy and the effect of annealing treatments DOI Creative Commons
Piero Mazzolini, Joel B. Varley, A. Parisini

et al.

Materials Today Physics, Journal Year: 2024, Volume and Issue: 45, P. 101463 - 101463

Published: May 15, 2024

Orthorhombic gallium oxide (κ-Ga2O3) is an ultra-wide bandgap semiconductor with great potential in new generation electronics. Its application hindered at present by the limited physical understanding of relationship between synthesis and functional properties. This work discusses effects growth method (metal-organic vapour phase epitaxy molecular beam epitaxy) as well annealing treatments different atmospheres (O2, H2) on point defects κ-Ga2O3 layers epitaxially grown c-plane sapphire. Comprehensive experimental characterization X-ray diffraction, photo current- photoluminescence excitation spectroscopy, electron spectroscopy combined first principles calculations defects' formation complex-dissociation energies. We demonstrate that for concentration shallow deep level can be sensitively controlled through temperatures (T = 500 °C) below thermal stability threshold this polymorph. In particular, our results suggest hydrogen-related (e.g., H-interstitials, Ga-vacancies—H complexes) play a key role process. While we provide direct exemplary implications performances based photodetectors, these findings are predicted to impact further fields κ-Ga2O3, such high mobility transistors or memory devices.

Language: Английский

Citations

9
Effect of Traps on the UV Sensitivity of Gallium Oxide-Based Structures DOI Creative Commons

V. M. Kalygina,

A. V. Tsymbalov, П. М. Корусенко

et al.

Crystals, Journal Year: 2024, Volume and Issue: 14(3), P. 268 - 268

Published: March 9, 2024

Resistive metal/β-Ga2O3/metal structures with different interelectrode distances and electrode topologies were investigated. The oxide films deposited by radio-frequency magnetron sputtering of a Ga2O3 (99.999%) target onto an unheated sapphire c-plane substrate (0001) in Ar/O2 gas mixture. are sensitive to ultraviolet radiation wavelength λ = 254. Structures interdigital topology have pronounced persistent conductivity. It is shown that the magnitude responsivity, response time τr, recovery τd determined concentration free holes p involved recombination processes. For first time, it proposed consider hole trapping both surface states Nts at metal/Ga2O3 interface traps bulk film.

Language: Английский

Citations

3
Brain-computer interfaces inspired spiking neural network model for depression stage identification DOI

M. Angelin Ponrani,

Monika Anand, Mahmood Alsaadi

et al.

Journal of Neuroscience Methods, Journal Year: 2024, Volume and Issue: 409, P. 110203 - 110203

Published: June 15, 2024

Language: Английский

Citations

3
Structure and properties of boron-implanted β-Ga2O3 monocrystals DOI
Alena Nikolskaya, Д. С. Королев, P. A. Yunin

et al.

Vacuum, Journal Year: 2025, Volume and Issue: 235, P. 114129 - 114129

Published: Feb. 13, 2025

Language: Английский

Citations

0
Morphological and Optical Tuning of β-Ga2O3 NRs/p-GaN/Sapphire via Precursor Concentration for High-Performance MSM UV Photodetector Application DOI

Aijaz Ali Soomro,

Sabah M. Mohammad, Naveed Afzal

et al.

Optical Materials, Journal Year: 2025, Volume and Issue: unknown, P. 116927 - 116927

Published: March 1, 2025

Language: Английский

Citations

0
Thinking Laterally - Probing the Force Holding the Oxide Layer to a Liquid Metal Interface. DOI Creative Commons
Pierre H. A. Vaillant, Vaishnavi Krishnamurthi, Caiden J. Parker

et al.

Surfaces and Interfaces, Journal Year: 2025, Volume and Issue: unknown, P. 106576 - 106576

Published: April 1, 2025

Language: Английский

Citations

0
In-sensor neuromorphic computing using perovskites and transition metal dichalcogenides DOI Creative Commons

Shen-Yi Li,

Ji-Tuo Li,

Kui Zhou

et al.

Journal of Physics Materials, Journal Year: 2024, Volume and Issue: 7(3), P. 032002 - 032002

Published: May 30, 2024

Abstract With the advancements in Web of Things, Artificial Intelligence, and other emerging technologies, there is an increasing demand for artificial visual systems to perceive learn about external environments. However, traditional sensing computing are limited by physical separation sense, processing, memory units that results challenges such as high energy consumption, large additional hardware costs, long latency time. Integrating neuromorphic functions into unit effective way overcome these challenges. Therefore, it extremely important design devices with ability properties low power consumption switching speed exploring in-sensor systems. In this review, we provide elementary introduction structures two common optoelectronic materials, perovskites transition metal dichalcogenides (TMDs). Subsequently, discuss fundamental concepts devices, including device working mechanisms. Furthermore, summarize extensively applications TMDs computing. Finally, propose potential strategies address offer a brief outlook on application materials term

Language: Английский

Citations

2