Materials,
Год журнала:
2024,
Номер
17(7), С. 1509 - 1509
Опубликована: Март 26, 2024
In
addressing
the
global
need
for
sustainable
energy
conversion,
this
study
presents
a
breakthrough
in
thermoelectric
materials
research
by
optimizing
Bi2O2Se1–xTex
system
Bi2O2Se/Bi2O2Te
pseudobinary
series.
Leveraging
principles
of
innovative
transport
mechanisms
and
defect
engineering,
we
introduce
tellurium
(Te)
doping
into
Bi2O2Se
to
enhance
its
properties
synergistically.
With
help
various
advanced
characterization
tools
such
as
XRD,
SEM,
TEM,
XPS,
FTIR,
TGA,
LFA,
DSC,
combined
with
relevant
resistance
density
measurement
techniques,
conducted
an
in-depth
exploration
complex
interactions
between
factors
within
materials.
We
recognize
that
balance
synergy
these
conversion
process
are
crucial
achieving
efficient
conversion.
Through
systematic
research,
committed
revealing
providing
solid
scientific
foundation
optimal
design
performance
enhancement
Finally,
advantage
coefficient
(ZT)
material
has
been
significantly
improved.
The
crystallographic
analysis
confirms
formation
continuous
series
mixed
crystals
varying
Te
concentrations,
adhering
Vegard’s
law
exhibiting
significant
improvements
electrical
thermal
conductivities.
crystals,
particularly
Bi2O2Se0.6Te0.4
composition,
demonstrate
peak
ZT
0.86
at
373
K.
This
achievement
aligns
recent
advancements
defect-enabled
band
convergence
sets
new
standard
high-performance
thermoelectrics.
study’s
findings
contribute
ongoing
quest
thermal-to-electrical
offering
promising
avenue
future
technologies.
Abstract
Photodetectors
are
one
of
the
most
critical
components
for
future
optoelectronic
systems
and
it
undergoes
significant
advancements
to
meet
growing
demands
diverse
applications
spanning
spectrum
from
ultraviolet
(UV)
terahertz
(THz).
2D
materials
very
attractive
photodetector
because
their
distinct
optical
electrical
properties.
The
atomic‐thin
structure,
high
carrier
mobility,
low
van
der
Waals
(vdWs)
interaction
between
layers,
relatively
narrower
bandgap
engineered
through
engineering,
absorption
coefficient
significantly
benefit
chip‐scale
production
integration
materials‐based
photodetectors.
extremely
sensitive
detection
at
ambient
temperature
with
ultra‐fast
capabilities
is
made
possible
adaptability
materials.
Here,
recent
progress
photodetectors
based
on
materials,
covering
UV
THz
reported.
In
this
report,
light
first
deliberated
in
terms
physics.
Then,
various
mechanisms
which
detectors
work,
important
performance
parameters,
fruitful
fabrication
methods,
fundamental
properties
types
detectors,
different
strategies
improve
performance,
discussed.
Abstract
In
the
past
decade,
molybdenum
ditelluride
(MoTe
2
)
has
received
significant
attention
from
scientific
community
due
to
its
structural
features
and
unique
properties
originate
them.
current
review,
properties,
various
preparation
approaches,
versatile
applications
of
MoTe
are
presented.
The
review
provides
a
brief
update
on
state
our
fundamental
understanding
material
also
discusses
issues
that
need
be
resolved.
To
introduce
,
we
briefly
summarize
structural,
optoelectronic,
magnetic,
mechanical
in
beginning.
Then,
different
methods
such
as
exfoliation,
laser
treatment,
deposition,
hydrothermal,
microwave,
molecular
beam
epitaxy,
included.
excellent
electrical
conductivity,
strong
optical
activity,
tunable
bandgap,
high
sensitivity,
impressive
stability
make
it
an
ideal
contender
for
applications,
including
energy
storage,
catalysis,
sensors,
solar
cells,
photodetectors,
transistors.
performance
these
is
systematically
introduced
along
with
mechanistic
insights.
At
end
article,
challenges
possible
future
directions
highlighted
further
modify
numerous
functionalities.
Therefore,
availability
phases
layer
structures
implies
potential
lead
era
two‐dimensional
materials
began
exfoliation
graphene.
ACS Nano,
Год журнала:
2024,
Номер
18(34), С. 23702 - 23710
Опубликована: Авг. 15, 2024
The
most
reported
two-dimensional
(2D)
reconfigurable
multivalued
logic
(RMVL)
devices
primarily
involve
a
planar
configuration
and
carrier
transport,
which
limits
the
high-density
circuit
integration
high-speed
operation.
In
this
work,
vertical
transistors
with
MoTe
Laser & Photonics Review,
Год журнала:
2024,
Номер
unknown
Опубликована: Окт. 26, 2024
Abstract
Self‐powered
photodetection
devices,
which
meet
the
requirement
of
environmental
sustainability,
are
widely
designed
by
PN
heterojunctions.
The
design
semiconductor/metal
interface
is
vital
in
PN‐junction
devices.
In
particular,
elevated
potential
barrier
at
metal/semiconductor
impedes
efficient
carrier
transport.
Therefore,
optimizing
for
junction,
either
reducing
or
leveraging
built‐in
electric
field
within
Schottky
holds
significant
importance
enhancing
performance
this
study,
an
InSe/MoTe
2
Type‐II
heterojunction
photodetector
constructed,
with
graphene
(Gr)
and
gold
(Au)
serving
as
electrodes
contact
InSe
MoTe
,
respectively.
Benefiting
from
reduced
Au/InSe
interfaces
formed
/Au
same
direction,
device
achieves
ultra‐fast
photoresponse
speed
14
µs
ultra‐low
dark
current
8.5
×
10⁻¹⁴
A
zero
bias.
Furthermore,
exhibits
a
remarkable
light
on/off
ratio
up
to
10
5
broad‐spectrum
ranging
visible
infrared
wavelength.
This
research
highlights
enormous
Gr/InSe/MoTe
van
der
Waals
heterostructure
realms
self‐powered
photodetection,
imaging,
optical
communication.
Advanced Functional Materials,
Год журнала:
2025,
Номер
unknown
Опубликована: Март 17, 2025
Abstract
2D
layered
Sb
2
Te
3
has
emerged
as
a
promising
material
for
thermoelectric
and
optoelectronic
applications.
However,
fabricating
single‐crystalline
flakes
with
the
desired
size,
shape,
orientation
remains
challenging
due
to
limited
understanding
of
their
growth
mechanisms.
In
this
study,
how
substrate,
time,
carrying
gas,
its
flow
rate
influence
behavior
through
chemical
vapor
deposition
(CVD)
approach
combined
van
der
Waals
epitaxy
(vdWE)
is
elucidated.
By
fine‐tuning
these
parameters,
controlled
morphology,
crystal
on
mica
substrates
are
successfully
achieved.
Notably,
record‐high
anisotropy
ratio
in
exceeding
10,000
obtained.
Photodetectors
fabricated
from
demonstrate
excellent
performance,
achieving
responsivity
1.34
A
W
−1
,
large
external
quantum
efficiency
(EQE)
332%,
high
specific
detectivity
(D
*
)
1.38
×
10¹⁰
Jones
under
light
power
density
10
mW
cm
−
.
Moreover,
device
exhibits
modulated
photocurrent
pulsed
light,
suggesting
potential
applications
synapses.
This
work
provides
detailed
insights
into
flakes,
offering
unprecedented
opportunities
exploring
fundamental
properties
development
next‐generation
devices.
Nano-Micro Letters,
Год журнала:
2025,
Номер
17(1)
Опубликована: Июнь 3, 2025
Abstract
With
high
surface-to-volume
ratio,
the
abundant
surface
states
and
carrier
concentration
are
challenging
near-infrared
photodetection
behaviors
of
narrow
band
gap
semiconductors
nanowires.
In
this
study,
semiconductor
Bi
2
O
Se
nanosheets
(NSs)
is
adopted
to
construct
mixed-dimensional
heterojunctions
with
GaSb
nanowires
(NWs)
for
demonstrating
impressive
self-powered
NIR
photodetection.
Benefiting
from
built-in
electric
field
~
140
meV,
as-constructed
NW/NS
heterojunction
photodetector
shows
low
dark
current
0.07
pA,
I
light
/
ratio
82
fast
response
times
<
2/2
ms
at
room
temperature.
The
performance
can
be
further
enhanced
by
fabricating
NW
array/NS
using
a
contact
printing
technique.
excellent
promises
in
imaging
photocommunication.
Applied Sciences,
Год журнала:
2024,
Номер
14(13), С. 5914 - 5914
Опубликована: Июль 6, 2024
Due
to
their
exceptional
electronic
and
optical
properties,
two-dimensional
materials
have
emerged
as
one
of
the
most
promising
candidates
for
future
optoelectronic
detection.
However,
detectors
based
on
transition
metal
still
face
challenges
due
factors
such
limited
absorption
coefficients
carrier
recombination.
In
this
study,
we
combine
Bi2O2Se
with
PbS
quantum
dots
prepare
a
hybrid
heterojunction,
effectively
broadening
detection
range
significantly
enhancing
photoresponse
rate.
The
photodetector
exhibited
remarkable
photoresponsivity
14.89
A/W
at
450
nm
demonstrated
broadband
capabilities
from
visible
(405
nm)
near-infrared
(1350
light
illumination.
Moreover,
device
showed
reduced
photocurrent
response
recovery
times,
highlighting
its
improved
performance
over
bare
photodetectors.
This
work
underscores
potential
heterojunctions
capabilities,
paving
way
advanced
applications
in
various
fields.
