A 2D ferroelectric vortex pattern in twisted BaTiO3 freestanding layers

Nature, Год журнала: 2024, Номер 626(7999), С. 529 - 534

Опубликована: Фев. 14, 2024

Abstract The wealth of complex polar topologies 1–10 recently found in nanoscale ferroelectrics results from a delicate balance between the intrinsic tendency materials to develop homogeneous polarization and electric mechanical boundary conditions imposed on them. Ferroelectric–dielectric interfaces are model systems which curling originates open circuit-like conditions, avoid build-up charges through formation flux-closure 11–14 domains that evolve into vortex-like structures at 15–17 level. Although ferroelectricity is known couple strongly with strain (both 18 inhomogeneous 19,20 ), effect constraints 21 thin-film has been comparatively less explored because relative paucity patterns can be implemented experimentally. Here we show stacking freestanding ferroelectric perovskite layers controlled twist angles provides an opportunity tailor these topological nanostructures way determined by lateral modulation associated twisting. Furthermore, find peculiar pattern vortices antivortices emerges flexoelectric coupling gradients. This finding opportunities create two-dimensional high-density vortex crystals would enable us explore previously unknown physical effects functionalities.

Язык: Английский

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Selenium Interface Layers Boost High Mobility and Switch Ratios in van der Waals Electronics

Nano Letters, Год журнала: 2025, Номер unknown

Опубликована: Янв. 6, 2025

Achieving high mobility while minimizing off-current and static power consumption is critical for applications of two-dimensional field-effect transistors. Herein, a selenium (Se) sacrificial layer introduced between the rhenium sulfide (ReS

Язык: Английский

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Engineering Directional Charge Carrier Transport Using Ferroelectric Polarization for Enhanced Photoelectrochemical Water Oxidation

Small, Год журнала: 2024, Номер 20(23)

Опубликована: Янв. 10, 2024

Abstract Introducing ferroelectric polarization has shown great potential to facilitate interfacial charge separation in photoelectrochemical (PEC) water splitting. However, unambiguous evidence of the actual influence spontaneous polarization, as compared heterojunction formation, on electron extraction and PEC splitting is still lacking date. Herein, core‐shell BaTiO3/TiO 2 nanostructures are designed photoanodes based paraelectric cubic tetragonal phases BaTiO 3 (BTO) perovskite. The crystalline stabilized using selected elaboration methods. Compared ( c ‐BTO), t ‐BTO) leads a favorable enhancing directional consequence increased photocurrent up factor 1.95. More interestingly, efficiency can be tuned by applying positive or negative with highest obtained for one. When loading Ni(OH) cocatalyst ‐BTO@TiO photoanode, /TiO / ‐BTO exhibits high performance superior stability toward oxidation almost 6.7 times that reference SiO @TiO . proposed facilitation may open an avenue engineer transport high‐performance oxidation.

Язык: Английский

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Steep Slope Field Effect Transistors Based on 2D Materials

Advanced Electronic Materials, Год журнала: 2024, Номер 10(8)

Опубликована: Май 24, 2024

Abstract With field effect transistor (FET) sustained to downscale sub‐10 nm nodes, performance degradation originates from short channel effects (SCEs) and power consumption increment attributed inhibition of supply voltage (VDD) scaling down proportionally caused by thermionic limit subthreshold swing (SS) (60 mV dec −1 ) pose substantial challenges for today's semiconductor industry. To further sustain the Moore's law life, incorporation new device concepts or materials are imperative. 2D predicted be able combat SCEs virtue high carrier mobility maintainability regardless thickness thinning down, dangling bonds free surface atomic thickness, which contributes super gate electrostatic controllability. overcome increasing dissipation problem, structures including negative capacitance FET (NCFET), tunnel (TFET), dirac source (DSFET) like, show superiority in decreasing VDD lowering SS below 60 have been brought out. The combination ultralow steep slope holds great promise low power‐dissipation electronics, encompass both suppressed reduced simultaneously, leading improved lowered dissipation.

Язык: Английский

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Freestanding Membranes for Unique Functionality in Electronics

ACS Applied Electronic Materials, Год журнала: 2023, Номер 5(2), С. 690 - 704

Опубликована: Янв. 20, 2023

Epitaxy of single-crystalline materials laid the foundation for numerous electronics as a core technology. Nevertheless, because epilayers are covalently bonded to substrates, only limited applications were explored. The recent development layer transfer techniques has suggested another way involving production freestanding membranes that free from substrates. In this review, we comprehensively catalog advances freestanding-membrane-based transistors and memory storage sensors energy harvesters. We highlight their unique advantages, including flexibility, physical coupling, heterointegrability, cost-effectiveness, summarize challenges perspectives.

Язык: Английский

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A review on recent advances in fabricating freestanding single-crystalline complex-oxide membranes and its applications

Physica Scripta, Год журнала: 2023, Номер 98(5), С. 052002 - 052002

Опубликована: Апрель 13, 2023

Abstract Complex-oxide materials are gaining a tremendous amount of interest in the semiconductor and device community as they hold many useful intrinsic physical properties such ferro/piezoelectricity, pyroelectricity, ferromagnetism, well magnetostriction other suitable for energy storage elements. Complex-oxides can also be complemented with conventional semiconductor-based devices or used by themselves to realize state-of-the-art electronic/photonic/quantum information devices. However, because complex-oxide have vastly different crystalline structures lattice constant difference compared (such Si III-V/III-N materials), integration complex-oxides onto platforms has been difficult. Thus, there efforts produce freestanding single-crystalline thin films that these transferred integrated together based on materials. This review will provide comprehensive membranes technology developed thus far: how synthesized, methods release them from substrate, their outstanding applications.

Язык: Английский

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Freestanding Perovskite Oxide Membranes: A New Playground for Novel Ferroic Properties and Applications

Advanced Functional Materials, Год журнала: 2023, Номер 34(4)

Опубликована: Окт. 20, 2023

Abstract Transition metal perovskite oxide membranes and their unique properties have attracted great attention recently been developed into one of the research frontiers in condensed matter physics materials science. Free constraint imposed by underlying substrate, freestanding exhibit extraordinary structural tunability flexibility far exceeding bulk epitaxial films clamped on substrates, which substantially extends explorable regime phase diagrams. Moreover, high‐quality membranes, even down to a single unit cell, can be synthesized stacked/integrated with any for novel artificial heterostructures electronic applications. The exceptional stacking ability provide new knobs explore spontaneous symmetry breaking oxides, providing fertile playground emergent primary ferroic/multiferroic Here, recent progress is briefly reviewed promising outlook future ferroic applications discussed.

Язык: Английский

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Two-Dimensional Layered Materials Meet Perovskite Oxides: A Combination for High-Performance Electronic Devices

ACS Nano, Год журнала: 2023, Номер 17(11), С. 9748 - 9762

Опубликована: Май 12, 2023

As the Si-based transistors scale down to atomic dimensions, basic principle of current electronics, which heavily relies on tunable charge degree freedom, faces increasing challenges meet future requirements speed, switching energy, heat dissipation, and packing density as well functionalities. Heterogeneous integration, where dissimilar layers materials functionalities are unrestrictedly stacked at an scale, is appealing for next-generation such multifunctional, neuromorphic, spintronic, ultralow-power devices, because it unlocks technologically useful interfaces distinct Recently, combination functional perovskite oxides two-dimensional layered (2DLMs) led unexpected enhanced device performance. In this paper, we review recent progress heterogeneous integration 2DLMs from perspectives fabrication interfacial properties, electronic applications, outlooks. particular, focus three types attractive namely field-effect transistors, memory, neuromorphic electronics. The van der Waals approach extendible other 2DLMs, leading almost unlimited combinations contributing high-performance spintronic devices.

Язык: Английский

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Graphene/III–V Quantum Dot Mixed-Dimensional Heterostructure for Enhanced Radiative Recombinations via Hole Carrier Transfer

Nano Letters, Год журнала: 2023, Номер 23(8), С. 3344 - 3351

Опубликована: Апрель 7, 2023

Fabrication of high quantum efficiency nanoscale device is challenging due to increased carrier loss at surface. Low dimensional materials such 0D dots and 2D have been widely studied mitigate the loss. Here, we demonstrate a strong photoluminescence enhancement from graphene/III-V dot mixed-dimensional heterostructures. The distance between graphene in 2D/0D hybrid structure determines degree radiative recombination 80% 800% compared only structure. Time-resolved decay also shows lifetimes when decreases 50 10 nm. We propose that optical energy band bending hole transfer, which repair imbalance electron densities dots. This graphene/0D heterostructure promise for performance optoelectronic devices.

Язык: Английский

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Ultralow-pressure-driven polarization switching in ferroelectric membranes

Nature Communications, Год журнала: 2024, Номер 15(1)

Опубликована: Окт. 28, 2024

Van der Waals integration of freestanding perovskite-oxide membranes with two-dimensional semiconductors has emerged as a promising strategy for developing high-performance electronics, such field-effect transistors. In these innovative transistors, the oxide have primarily functioned dielectric layers, yet their great potential structural tunability remains largely untapped. Free epitaxial constraints by substrate, exhibit remarkable tunability, providing unique material system to achieve huge strain gradients and pronounced flexoelectric effects. Here, harnessing excellent PbTiO3 modulating underlying substrate's elasticity, we demonstrate tip-pressure-induced polarization switching an ultralow pressure (down 0.06 GPa). Moreover, application demonstration, develop prototype non-volatile ferroelectric transistor integrated on silicon that can be operated mechanically electrically. Our findings underscore utilization in advanced electronics highly sensitive sensors. The authors realize low-pressure-driven leveraging substrate enabling transistors silicon, operatable

Язык: Английский

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