Highly Reliable and Sensitive Solar-Blind Ultraviolet and X-Ray Detector based on ALD Deposited Amorphous Ga2O3 DOI
Zhan Wang, Xinyuan Wang, Yan Ma

и другие.

IEEE Electron Device Letters, Год журнала: 2024, Номер 45(10), С. 1879 - 1882

Опубликована: Авг. 2, 2024

Язык: Английский

Sensitive direct converting thin film x-ray detector utilizing β-Ga2O3 fabricated via MOCVD DOI

Zhiyu Gan,

Chen Li, Xiaohu Hou

и другие.

Applied Physics Letters, Год журнала: 2024, Номер 125(19)

Опубликована: Ноя. 4, 2024

Ga2O3 has been considered as one of the most suitable materials for x-ray detection, but its detection performance is still at a low level due to limitation quality and absorbance, especially hard x-ray. In this work, effects growth temperature miscut angle sapphire substrate on crystal thin films were investigated based MOCVD technique. It was found that mode transformed from island step-flow using substrates increasing temperature, which accompanied by improvement reduction density trapped states. with optimal finally prepared 4° 900 °C. The detector film shows good response sensitivity 3.72 × 105μC·Gyair−1·cm−2. Furthermore, impacts trap in depth, mechanism photoconductive gain thin-film analyzed.

Язык: Английский

Процитировано

2
Luminescence properties of β-Ga2O3:Bi single crystals growth by the optical floating zone method DOI
Xiaolong Yang, Huili Tang, Chaoyi Zhang

и другие.

Journal of Luminescence, Год журнала: 2024, Номер unknown, С. 121002 - 121002

Опубликована: Ноя. 1, 2024

Язык: Английский

Процитировано

2
Iron dopant energy levels in β-Ga2O3 DOI Creative Commons
Louis A. Angeloni, I.-J. Shan, Jacob H. Leach

и другие.

Applied Physics Letters, Год журнала: 2024, Номер 124(25)

Опубликована: Июнь 17, 2024

The energetic positions of the two Fe dopant levels in bandgap β-Ga2O3 are determined to be at 3.05(±0.05) and 3.85(±0.05) eV below conduction band minimum from transmission measurements employing a sub-picosecond tunable ultraviolet laser radiation source. A further measurement quantum efficiency photoelectron emission Fe:Ga2O3(010) photocathode is consistent with obtained absorption data dominant optical phonon assisted Franck–Condon mechanism, while also providing an estimate 100 ps for electron lifetime.

Язык: Английский

Процитировано

1
Charge Neutral Point Shift of a 700 nm-Thick α-Ga2O3 Thin-Film Detector under Soft X-ray Irradiation DOI

Thanh Huong Vo,

Sunjae Kim, Minje Kim

и другие.

ACS Applied Electronic Materials, Год журнала: 2024, Номер unknown

Опубликована: Июль 26, 2024

This study investigates the shift of charge neutral point (CNP) 700 nm-thick α-Ga2O3 metal–semiconductor-metal (MSM) devices in response to X-ray exposure and relaxation time. The CNP is mainly attributed generation recombination positive ions thin film. These findings contribute understanding MSM detectors have potential be applied various fields imaging sensing technologies.

Язык: Английский

Процитировано

1
Highly Reliable and Sensitive Solar-Blind Ultraviolet and X-Ray Detector based on ALD Deposited Amorphous Ga2O3 DOI
Zhan Wang, Xinyuan Wang, Yan Ma

и другие.

IEEE Electron Device Letters, Год журнала: 2024, Номер 45(10), С. 1879 - 1882

Опубликована: Авг. 2, 2024

Язык: Английский

Процитировано

0