Physical Review Research,
Год журнала:
2025,
Номер
7(2)
Опубликована: Апрель 3, 2025
Oxygen-deficient
titanium
dioxide
(TiO2−x)
is
a
very
attractive
material
for
several
applications
ranging
from
photocatalysis
to
resistive
switching.
Oxygen
vacancies
turn
insulating
anatase
into
polaronic
conductor,
while
creating
defect-state
band
below
the
ultraviolet
semiconducting
gap.
Here
we
employ
combination
of
broadband
infrared
(IR)
reflectivity
and
THz-pump/IR-probe
measurements
investigate
relationship
between
localized
defect
states
delocalized
conducting
states.
We
show
that
THz
pump
allows
convert
deeply
electrons
metastable
polarons
with
lifetime
in
ns
range.
These
long-lived
may
find
application
novel
optoelectronic
exploiting
interplay
dc
resistivity,
terahertz
signals.
Published
by
American
Physical
Society
2025
Nano-Micro Letters,
Год журнала:
2024,
Номер
16(1)
Опубликована: Фев. 16, 2024
Due
to
the
constraints
imposed
by
physical
effects
and
performance
degradation,
silicon-based
chip
technology
is
facing
certain
limitations
in
sustaining
advancement
of
Moore's
law.
Two-dimensional
(2D)
materials
have
emerged
as
highly
promising
candidates
for
post-Moore
era,
offering
significant
potential
domains
such
integrated
circuits
next-generation
computing.
Here,
this
review,
progress
2D
semiconductors
process
engineering
various
electronic
applications
are
summarized.
A
careful
introduction
material
synthesis,
transistor
focused
on
device
configuration,
dielectric
engineering,
contact
integration
given
first.
Then
transistors
including
digital
analog
circuits,
heterogeneous
chips,
sensing
discussed.
Moreover,
several
(artificial
intelligence
chips
quantum
chips)
based
specific
mechanism
devices
introduced.
Finally,
challenges
encountered
achieving
circuit-level
or
system-level
analyzed,
development
pathways
roadmaps
further
speculated
outlooked.
Advanced Functional Materials,
Год журнала:
2024,
Номер
unknown
Опубликована: Сен. 9, 2024
Abstract
Research
on
organic–inorganic
hybrid
materials
(OIHMs)
has
experienced
explosive
growth
in
the
past
decades.
The
diversity
of
organic
components
allows
for
introduction
various
spatial
scales,
functional
groups,
and
polarities,
while
inorganic
provide
higher
hardness,
heat
resistance,
stability,
their
flexible
combination
facilitates
formation
diverse
structures.
Furthermore,
simple
cost‐effective
synthesis
methods,
such
as
room
temperature
solution
processes
mechanochemical
techniques,
enable
precise
control
over
materials'
properties
at
different
thus
achieving
adjustable
structure–performance
relationships.
This
review
will
discuss
recent
research
progress
OIHMs
within
field
optoelectronics
related
optoelectronic
device
applications.
According
to
dimension
nature
interface,
this
divides
into
four
structural
categories.
ongoing
revealed
applications
fields
solar
cells,
light‐emitting
devices,
detectors,
memristors.
As
an
outlook,
potential
perovskite
0D
metal
halide
materials,
which
are
currently
most
studied,
enhancing
performance
stability
is
discussed.
Journal of Materials Chemistry C,
Год журнала:
2024,
Номер
12(11), С. 3770 - 3810
Опубликована: Янв. 1, 2024
An
overview
of
fabrication
methods,
including
CMOS,
nanojoining,
and
3D
printing
techniques,
materials,
structures,
properties,
mechanisms,
applications
memristors,
as
well
the
most
recent
advancements
in
molecular
is
provided.
The Journal of Physical Chemistry Letters,
Год журнала:
2024,
Номер
15(9), С. 2453 - 2461
Опубликована: Фев. 26, 2024
The
organic–inorganic
halide
perovskite
has
become
one
of
the
most
promising
candidates
for
next-generation
memory
devices,
i.e.
memristors,
with
excellent
performance
and
solution-processable
preparation.
Yet,
mechanism
resistive
switching
in
perovskite-based
memristors
remains
ambiguous
due
to
a
lack
situ
visualized
characterization
methods.
Here,
we
directly
observe
process
photoluminescence
(PL)
imaging
microscopy
under
an
external
electric
field.
Furthermore,
corresponding
element
composition
conductive
filaments
(CFs)
is
studied,
indicating
that
metallic
CFs
respect
activity
top
electrode
are
essential
device
performance.
Finally,
electrochemical
impedance
spectroscopy
(EIS)
conducted
reveal
transition
ion
states
associated
formation
CFs.
This
study
provides
in-depth
insights
into
paving
pathway
develop
optimize
high-performance
large-scale
applications.
The Journal of Physical Chemistry Letters,
Год журнала:
2024,
Номер
15(13), С. 3668 - 3676
Опубликована: Март 27, 2024
Memristor
holds
great
potential
for
enabling
next-generation
neuromorphic
computing
hardware.
Controlling
the
interfacial
characteristics
of
device
is
critical
seamlessly
integrating
and
replicating
synaptic
dynamic
behaviors;
however,
it
commonly
overlooked.
Herein,
we
report
straightforward
oxidation
a
Mo
electrode
in
air
to
design
MoOx
memristors
that
exhibit
nonvolatile
ultrafast
switching
(0.6–0.8
mV/decade,
<1
mV/decade)
with
high
on/off
ratio
(>104),
long
durability
(>104
s),
low
power
consumption
(17.9
μW),
excellent
device-to-device
uniformity,
ingeniously
behavior,
finely
programmable
multilevel
analog
switching.
The
analyzed
physical
mechanism
observed
resistive
behavior
might
be
conductive
filaments
formed
by
oxygen
vacancies.
Intriguingly,
upon
organization
into
memristor-based
crossbar
arrays,
addition
simulated
multipattern
memorization,
edge
detection
on
random
images
can
implemented
well
parallel
processing
pixels
using
3
×
2
array
Prewitt
filter
groups.
These
are
vital
functions
neural
system
hardware
efficient
in-memory
systems
massive
parallelism
beyond
von
Neumann
architecture.
Science and Technology of Advanced Materials,
Год журнала:
2024,
Номер
25(1)
Опубликована: Апрель 16, 2024
As
miniaturization
of
semiconductor
memory
devices
is
reaching
its
physical
and
technological
limits,
there
a
demand
for
technologies
that
operate
on
new
principles.
Atomic
switches
are
nanoionic
show
repeatable
resistive
switching
between
high-resistance
low-resistance
states
under
bias
voltage
applications,
based
the
transport
metal
ions
redox
reactions
in
solids.
Their
essential
structure
consists
an
ion
conductor
sandwiched
electrochemically
active
inert
electrodes.
This
review
focuses
mechanism
atomic
utilize
solid
polymer
electrolyte
(SPE)
as
conductor.
Owing
to
superior
properties
materials
such
mechanical
flexibility,
compatibility
with
various
substrates,
low
fabrication
costs,
SPE-based
promising
candidate
next-generation
volatile
nonvolatile
memories.
Herein,
we
describe
their
operating
mechanisms
key
factors
controlling
device
performance
different
matrices.
In
particular,
effects
moisture
absorption
matrix
behavior
addressed
detail.
potential
inkjet-printed
SPE
quantum
conductance
described.
also
have
great
use
neuromorphic
devices.
The
development
these
will
be
enhanced
using
nanoarchitectonics
concepts,
which
integrate
functional
ACS Applied Materials & Interfaces,
Год журнала:
2024,
Номер
16(10), С. 12277 - 12288
Опубликована: Фев. 29, 2024
Capitalizing
on
rapid
carrier
migration
characteristics
and
outstanding
photoelectric
conversion
performance,
halide
perovskite
memristors
demonstrate
an
exceptional
resistive
switching
performance.
However,
they
have
consistently
faced
constraints
due
to
material
stability
issues.
This
study
systematically
employs
elemental
modulation
dimension
engineering
effectively
control
with
different
dimensions
A-site
elements.
Compared
pure
3D
2D
perovskites,
the
quasi-2D
memristor,
specifically
BA0.15MA0.85PbI3,
is
identified
as
optimal
choice
through
observations
of
(HRS
current
<
10–5
A,
ON/OFF
ratio
>
103,
endurance
cycles
1000,
retention
time
104
s)
synaptic
plasticity
characteristics.
Subsequently,
a
comprehensive
investigation
into
various
aspects,
including
paired-pulse
facilitation
(PPF),
spike-variability-dependent
(SVDP),
spike-rate-dependent
(SRDP),
spike-timing-dependent
(STDP),
conducted.
Practical
applications,
such
memory–forgetting–memory
recognition
Modified
National
Institute
Standards
Technology
(MNIST)
database
handwritten
data
set
(accuracy
rate
reaching
94.8%),
are
explored
successfully
realized.
article
provides
good
theoretical
guidance
for
synaptic-like
simulation
in
memristors.
Applied Physics Letters,
Год журнала:
2024,
Номер
124(13)
Опубликована: Март 25, 2024
Photoelectric
synaptic
devices
as
a
combination
of
electronic
synapse
and
photodetector
are
considered
emerging
bio-inspired
device
technologies.
These
have
immense
potential
to
conquer
the
bottleneck
von
Neumann
architecture
based
traditional
computing
systems.
In
this
Letter,
we
propose
an
all-oxide
photoelectric
neuro-synaptic
resistive
random
access
memory
with
structure
ITO/Ga2O3/ZnO/ITO/Glass,
in
which
conductance
states
reversibly
tuned
by
two
different
wavelengths
(405/522
nm)
visible
light
spectrum.
The
strength
pulse
is
altered
investigate
learning
forgetting
phases
response
device.
A
basic
biomimetic
function
“learning-forgetting-rehearsal”
behavior
imitated
up
20
cycles.
Moreover,
emulation
some
typical
functions
such
associative
switching
between
short
long
term
plasticities
indicate
wavelength
awareness
Based
on
pure
optically
induced
potentiation/depression
characteristics,
convolutional
neural
network
simulation
achieves
overall
test
accuracy
82.5%
for
classification
Zalando's
article
images.
noise
tolerance
capability
also
examined
applying
“salt
pepper”
high
proportion
(75%)
corrupt
This
work
may
provide
promising
step
toward
development
transparent
electronics
optogenetics-inspired
neuromorphic
computing.
