Self-Powered Broad-Spectrum UV–vis–NIR Photodetector Based on p-Si/Zn–Sn–Al–O Heterojunction DOI
Shice Wei, Bojia Chen, Jiyuan Zhu

и другие.

ACS Applied Electronic Materials, Год журнала: 2025, Номер unknown

Опубликована: Май 18, 2025

Язык: Английский

Exploring the Structural, Mechanical and Optical Properties of K2InGaX6 (X = Cl, Br or I) Compounds by Density Functional Theory DOI

Nabeel Israr,

S. Khan, Adel El‐marghany

и другие.

Journal of Inorganic and Organometallic Polymers and Materials, Год журнала: 2025, Номер unknown

Опубликована: Апрель 9, 2025

Язык: Английский

Процитировано

2

Real‐Time UVC Imaging and High Safety Communication Based on Dual‐Detectable Lead‐Free Perovskite Heterostructure DOI Open Access
Fa Cao, Enliu Hong, Ziqing Li

и другие.

Advanced Functional Materials, Год журнала: 2025, Номер unknown

Опубликована: Янв. 13, 2025

Abstract Ultraviolet band C photodetectors (UVC PDs), which can convert the UVC light (200–280 nm) signals into detectable signals, have received tremendous attention due to their wide applications in bio‐medicine, communications, and imaging fields. However, current research primarily focuses on either conversion of electrical or its visible signals. Here, a flexible dual‐detectable PD based Ca 2 Nb 3 O 10 nanosheets CsCu I film is reported, simultaneously achieving visual detection for invisible light. The exhibits exceptional self‐powered (270 nm; 1.87 mW cm −2 ) abilities with high responsivity (R) 16.7 mA W −1 , an impressive detectivity 6.1 × 11 Jones, on/off ratio 3789, ultra‐high UVC/UVA (R 270 /R 360 rejection 2.1 5 . shows great application potential safety communication real‐time imaging. This work proposes new type through material selection structural design, thereby inspiring novel ideas enhance convenience practicality photodetection.

Язык: Английский

Процитировано

1

Rational engineering of dual Z-scheme Dy₂Sn₂O₇/MoS₂/Ag@g-C₃N₄ heterostructures for efficient tetracycline photodegradation via persulphate activation: Insights from DFT and experimental characterization DOI

Akash Ashokrao Jagtap,

Dhanashri D. Khandagale,

Susaritha Ramanathan

и другие.

Journal of environmental chemical engineering, Год журнала: 2025, Номер unknown, С. 116492 - 116492

Опубликована: Апрель 1, 2025

Язык: Английский

Процитировано

1

Lead-free single crystal metal halide perovskite detectors DOI
Fa Cao, Ying Liu,

X. D. Zhang

и другие.

Materials Science and Engineering R Reports, Год журнала: 2025, Номер 164, С. 100991 - 100991

Опубликована: Апрель 9, 2025

Язык: Английский

Процитировано

1

Retina‐Like Neuromorphic Visual Sensor for Sensing Broad‐Spectrum Ultraviolet Light DOI
Zhaoying Xi,

Maosheng Liu,

Jia‐Han Zhang

и другие.

Advanced Optical Materials, Год журнала: 2024, Номер unknown

Опубликована: Авг. 29, 2024

Abstract The rapidly developing Artificial Intelligence era has an increasing demand for high‐performance organ‐on‐a‐chip systems, especially the vision system, which is most essential perceptual system human beings. However, traditional artificial systems require multiple functional components, are not favorable integration. Neuromorphic visual sensors (NVSs) inspired by retina combine sensing and preprocessing functions. NVSs complex structures to achieve both photo memory, difficult be large‐scale fabricated. Here, a novel In 2 O 3 ‐Ga (InGaO) thin‐film‐based NVS with high photosensitivity superior photomemory performance proposed, can avoid multilayer structure. device possesses accuracy optical communication retina‐like Notably, this InGaO achieves of UV light, it been experimentally confirmed have excellent photoelectric synaptic under 254 nm 365 illumination. This work provides feasible strategy assist eye in invisible light.

Язык: Английский

Процитировано

9

Pt/ZnO and Pt/Few-Layer Graphene/ZnO Schottky Devices with Al Ohmic Contacts Using Atlas Simulation and Machine Learning DOI Creative Commons
Shonak Bansal,

Abha Kiran Rajpoot,

G. Chamundeswari

и другие.

Journal of Science Advanced Materials and Devices, Год журнала: 2024, Номер 9(4), С. 100798 - 100798

Опубликована: Окт. 19, 2024

Язык: Английский

Процитировано

7

Heterogeneous Integration of Wide Bandgap Semiconductors and 2D Materials: Processes, Applications, and Perspectives DOI Creative Commons
Soo Ho Choi, Yongsung Kim, Il Jeon

и другие.

Advanced Materials, Год журнала: 2024, Номер unknown

Опубликована: Окт. 19, 2024

Abstract Wide‐bandgap semiconductors (WBGs) are crucial building blocks of many modern electronic devices. However, there is significant room for improving the crystal quality, available choice materials/heterostructures, scalability, and cost‐effectiveness WBGs. In this regard, utilizing layered 2D materials in conjunction with WBG emerging as a promising solution. This review presents recent advancements integration WBGs materials, including fabrication techniques, mechanisms, devices, novel functionalities. The properties various their techniques epitaxial nonepitaxial growth methods well transfer along advantages challenges, discussed. Additionally, devices applications based on WBG/2D heterostructures introduced. Distinctive merging described detail, perspectives strategies to overcome current challenges unlock unexplored potential heterostructures.

Язык: Английский

Процитировано

7

Ga₂O₃ Solar-Blind Photodetectors: From Civilian Applications to Missile Detection and Research Agenda DOI
Yana Suchikova, Serhii Nazarovets, Anatoli I. Popov

и другие.

Optical Materials, Год журнала: 2024, Номер 157, С. 116397 - 116397

Опубликована: Ноя. 1, 2024

Язык: Английский

Процитировано

6

Supersaturation- and external force-engineered high-quality 2D CsCu2I3 single-crystalline film for heterogeneous integration in photodetectors DOI
Sancan Han,

Xianyu Qiao,

Yimin Li

и другие.

Chemical Engineering Journal, Год журнала: 2024, Номер 498, С. 155445 - 155445

Опубликована: Сен. 2, 2024

Язык: Английский

Процитировано

3

Modulating UV transparency and plasmonic behavior in Mg0.5Zn0.5O: A DFT analysis of structural, electronic, and thermodynamic optimization DOI
K. Mohammed Salman, Mohamed Zikriya, Gaurav Jhaa

и другие.

Materials Science and Engineering B, Год журнала: 2025, Номер 314, С. 118000 - 118000

Опубликована: Янв. 13, 2025

Язык: Английский

Процитировано

0