Cited by Ultrasensitive self-powered broadband ultraviolet photodetectors based on n-(Ga0.9Sn0.1)2O3/n-TiO2 heterojunction

Retina‐Like Neuromorphic Visual Sensor for Sensing Broad‐Spectrum Ultraviolet Light DOI

Zhaoying Xi,

Maosheng Liu,

Jia‐Han Zhang

et al.

Advanced Optical Materials, Journal Year: 2024, Volume and Issue: unknown

Published: Aug. 29, 2024

Abstract The rapidly developing Artificial Intelligence era has an increasing demand for high‐performance organ‐on‐a‐chip systems, especially the vision system, which is most essential perceptual system human beings. However, traditional artificial systems require multiple functional components, are not favorable integration. Neuromorphic visual sensors (NVSs) inspired by retina combine sensing and preprocessing functions. NVSs complex structures to achieve both photo memory, difficult be large‐scale fabricated. Here, a novel In 2 O 3 ‐Ga (InGaO) thin‐film‐based NVS with high photosensitivity superior photomemory performance proposed, can avoid multilayer structure. device possesses accuracy optical communication retina‐like Notably, this InGaO achieves of UV light, it been experimentally confirmed have excellent photoelectric synaptic under 254 nm 365 illumination. This work provides feasible strategy assist eye in invisible light.

Language: Английский

Citations

Real‐Time UVC Imaging and High Safety Communication Based on Dual‐Detectable Lead‐Free Perovskite Heterostructure DOI

Fa Cao, Enliu Hong, Ziqing Li

et al.

Advanced Functional Materials, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 13, 2025

Abstract Ultraviolet band C photodetectors (UVC PDs), which can convert the UVC light (200–280 nm) signals into detectable signals, have received tremendous attention due to their wide applications in bio‐medicine, communications, and imaging fields. However, current research primarily focuses on either conversion of electrical or its visible signals. Here, a flexible dual‐detectable PD based Ca 2 Nb 3 O 10 nanosheets CsCu I film is reported, simultaneously achieving visual detection for invisible light. The exhibits exceptional self‐powered (270 nm; 1.87 mW cm −2 ) abilities with high responsivity (R) 16.7 mA W −1 , an impressive detectivity 6.1 × 11 Jones, on/off ratio 3789, ultra‐high UVC/UVA (R 270 /R 360 rejection 2.1 5 . shows great application potential safety communication real‐time imaging. This work proposes new type through material selection structural design, thereby inspiring novel ideas enhance convenience practicality photodetection.

Language: Английский

Citations

Lead-free single crystal metal halide perovskite detectors DOI

Fa Cao, Ying Liu,

X. D. Zhang

et al.

Materials Science and Engineering R Reports, Journal Year: 2025, Volume and Issue: 164, P. 100991 - 100991

Published: April 9, 2025

Language: Английский

Citations

Heterogeneous Integration of Wide Bandgap Semiconductors and 2D Materials: Processes, Applications, and Perspectives DOI

Soo Ho Choi, Yongsung Kim, Il Jeon

et al.

Advanced Materials, Journal Year: 2024, Volume and Issue: unknown

Published: Oct. 19, 2024

Abstract Wide‐bandgap semiconductors (WBGs) are crucial building blocks of many modern electronic devices. However, there is significant room for improving the crystal quality, available choice materials/heterostructures, scalability, and cost‐effectiveness WBGs. In this regard, utilizing layered 2D materials in conjunction with WBG emerging as a promising solution. This review presents recent advancements integration WBGs materials, including fabrication techniques, mechanisms, devices, novel functionalities. The properties various their techniques epitaxial nonepitaxial growth methods well transfer along advantages challenges, discussed. Additionally, devices applications based on WBG/2D heterostructures introduced. Distinctive merging described detail, perspectives strategies to overcome current challenges unlock unexplored potential heterostructures.

Language: Английский

Citations

Pt/ZnO and Pt/Few-Layer Graphene/ZnO Schottky Devices with Al Ohmic Contacts Using Atlas Simulation and Machine Learning DOI

Shonak Bansal,

Abha Kiran Rajpoot,

G. Chamundeswari

et al.

Journal of Science Advanced Materials and Devices, Journal Year: 2024, Volume and Issue: 9(4), P. 100798 - 100798

Published: Oct. 19, 2024

Language: Английский

Citations

Ga₂O₃ Solar-Blind Photodetectors: From Civilian Applications to Missile Detection and Research Agenda DOI

Yana Suchikova, Serhii Nazarovets, Anatoli I. Popov

et al.

Optical Materials, Journal Year: 2024, Volume and Issue: 157, P. 116397 - 116397

Published: Nov. 1, 2024

Language: Английский

Citations

Modulating UV transparency and plasmonic behavior in Mg0.5Zn0.5O: A DFT analysis of structural, electronic, and thermodynamic optimization DOI

K. Mohammed Salman, Mohamed Zikriya, Gaurav Jhaa

et al.

Materials Science and Engineering B, Journal Year: 2025, Volume and Issue: 314, P. 118000 - 118000

Published: Jan. 13, 2025

Language: Английский

Citations

Self-powered ultraviolet photodetecting properties of ferroelectric Bi3.15Nd0.85Ti3O12 polycrystalline thin films DOI

Jie Li, Hongyan Qi, Huaixing Wang

et al.

Journal of Materials Science Materials in Electronics, Journal Year: 2025, Volume and Issue: 36(3)

Published: Jan. 1, 2025

Language: Английский

Citations

Ga2O3 Hole Blocking layer for Suppressing Vis-NIR Response in p-Si/ZnO Heterojunction Photodetectors DOI

Hepeng Zhao,

Dayong Jiang, Man Zhao

et al.

Journal of Alloys and Compounds, Journal Year: 2025, Volume and Issue: unknown, P. 179521 - 179521

Published: March 1, 2025

Language: Английский

Citations

High-Performance CuI-based Ultraviolet Phototransistors DOI

Mingyang Wang, Huihui Zhu, Ao Liu

et al.

Materials Today Electronics, Journal Year: 2025, Volume and Issue: unknown, P. 100149 - 100149

Published: March 1, 2025

Language: Английский

Citations