Advances in Ag₂Se-based thermoelectrics from materials to applications

Energy & Environmental Science, Journal Year: 2023, Volume and Issue: 16(5), P. 1870 - 1906

Published: Jan. 1, 2023

Thermoelectric materials and their devices can realize the solid-state energy conversion between thermal electrical energy, therefore serving as a promising alternative to conventional fossil fuels for supply.

Language: Английский

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High-Performance Broadband Photoelectrochemical Photodetectors Based on Ultrathin Bi₂O₂S Nanosheets

ACS Applied Materials & Interfaces, Journal Year: 2022, Volume and Issue: 14(5), P. 7175 - 7183

Published: Jan. 31, 2022

Two-dimensional (2D) bismuth oxychalcogenide (Bi2O2X, X refers to S, Se, and Te) is one type of rising semiconductor with excellent electrical transport properties, high photoresponse, good air stability. However, the research on 2D Bi2O2S limited. In this work, ultrathin nanosheets are synthesized by a facile eco-friendly chemical synthesis method at room temperature. The thickness lateral sizes 2-4 nm 20-40 nm, respectively. have broad absorption spectrum from ultraviolet (UV) near-infrared (NIR). Photoelectrochemical (PEC) photodetectors based fabricated simple drop-casting method. Bi2O2S-based PEC show photodetection performance photoresponse 365 850 responsivity 13.0 mA/W, ultrafast response times 10/45 ms, long-term stability bias voltage 0.6 V, which superior most material-based photodetectors. Further, photodetector can function as high-performance self-powered broadband photodetector. Moreover, be effectively tuned concentration kind electrolyte. Our results demonstrate that hold great promise for application in optoelectronic devices.

Language: Английский

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Silver Copper Chalcogenide Thermoelectrics: Advance, Controversy, and Perspective

Advanced Materials, Journal Year: 2024, Volume and Issue: 36(37)

Published: April 12, 2024

Abstract Thermoelectric technology, which enables a direct and pollution‐free conversion of heat into electricity, provides promising path to address the current global energy crisis. Among broad range thermoelectric materials, silver copper chalcogenides (AgCuQ, Q = S, Se, Te) have garnered significant attention in community light inherently ultralow lattice thermal conductivity, controllable electronic transport properties, excellent performance across various temperature ranges, degree ductility. This review epitomizes recent progress AgCuQ‐based from optimization rational design devices, encompassing fundamental understanding crystal structures, band mechanical quasi‐liquid behaviors. The correlation between chemical composition, this material system is also highlighted. Finally, several key issues prospects are proposed for further optimizing materials.

Language: Английский

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Oxychalcogenides as Thermoelectric Materials: An Overview

ACS Applied Energy Materials, Journal Year: 2021, Volume and Issue: 4(3), P. 2022 - 2040

Published: Feb. 15, 2021

Thermoelectric materials, which can convert heat into electricity and vice versa, have essential applications in power generation, thermocouples, sensors, cooling. In the past decade, a lot of research has been devoted to developing various oxide-based thermoelectric for mid- high-temperature applications, ensuring robustness, long lifetimes, low production costs. Among these oxide one popular class is oxychalcogenides. A comprehensive discussion on structural, electronic, properties both p-type n-type oxychalcogenides presented this review article. The alternatively stacked conducting insulating layers combined with unique bonding network lead interesting electronic intrinsically thermal conductivity. article focuses primarily Bi-based shown relatively good performance range, an elaborate compositions. Several approaches such as chemical doping, modulation introducing vacancies, band structure engineering, so forth are summarized, vastly improving zT materials enabling their potential viability applications. Finally, we discuss few strategies future direction further enhance oxychalcogenide materials.

Language: Английский

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Construction of Bi₂O₂Se/Bi₂Se₃ Van Der Waals Heterostructures for Self-Powered and Broadband Photodetectors

ACS Applied Materials & Interfaces, Journal Year: 2022, Volume and Issue: 14(11), P. 13507 - 13515

Published: March 8, 2022

Due to its superior carrier mobility and high air stability, the emerging two-dimensional (2D) layered bismuth oxyselenide (Bi2O2Se) nanosheets have attracted extensive attention, showing great potential for applications in electronic optoelectronic fields. However, a easily leads dark current, seriously restricting applications, especially field of photodetectors. In this paper, we report high-quality Van der Waals (vdWs) Bi2O2Se/Bi2Se3 heterostructure on fluorophlogopite substrate, exhibiting excellent photodiode characteristics. By means effective separation photogenerated electrons holes by junction barrier at interface, current on/off ratio is up about 3 × 103 under 532 nm laser illumination with zero bias. addition, photodetector not only achieves fast response speed 41 ms but also has broadband photoresponse from 1450 (visible-NIR). Additionally, responsivity can reach 0.29 A/W, external quantum efficiency exceeds 69% when device operates reverse bias condition. The results indicate that vdWs self-powered, broadband, photodetection applications.

Language: Английский

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Properties, Synthesis, and Device Applications of 2D Layered InSe

Advanced Materials Technologies, Journal Year: 2022, Volume and Issue: 7(12)

Published: June 29, 2022

Abstract Van der Waals layered indium selenide (InSe) is an emerging star of the 2D semiconducting materials because its excellent fundamental properties, such as ultrahigh carrier mobility, layer‐tunable bandgap, large elastic deformability, and rich polytypes. In addition, has demonstrated outstanding device performance including photodetector, field‐effect transistor, memory synapse, mechanical gas sensor, which offered a new chance to next‐generation electrical optoelectronic devices. This review presents comprehensive summary recent progress in selenide. The novel properties synthetic methods are summarized. Also, selenide‐based state‐of‐the‐art electronic/optoelectronic devices, functional sensors systematically techniques enhance performances devices also discussed. Finally, brief discussion on challenges future opportunities guideline for this field provided.

Language: Английский

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Graphite Nanosheets as Multifunctional Nanoinclusions to Boost the Thermoelectric Performance of the Shear‐Exfoliated Bi₂O₂Se

Advanced Functional Materials, Journal Year: 2022, Volume and Issue: 32(30)

Published: May 3, 2022

Abstract As an eco‐friendly oxide‐based thermoelectric material, Bi 2 O Se exhibits considerable potential for practical device application, but its low electrical conductivity needs to be further improved achieve higher performance. Here, a record‐high figure of merit, ZT >0.7 at 773 K in the shear‐exfoliated nanostructured with graphite nanosheets as multifunctional secondary nanoinclusions, is achieved. The introduced regularize arrangement nanograins, strengthen anisotropy, and act “expressway” improve by simultaneously enhancing electron carrier concentration mobility hybrid materials, leading high power factor ≈6.0 µW cm –1 –2 K. Also, liquid‐phase shear exfoliation refines both into nanosheets. Moreover, as‐sintered bulk materials composed these possess dense grain phase boundaries, well various lattice imperfections, such distortions stacking faults formed physical shearing, which can significantly scatter phonons different wavelengths turn contribute thermal only 0.63 W m K, contributing competitive ≈0.73 this temperature, indicating great applications.

Language: Английский

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Bi2O2Se: A rising star for semiconductor devices

Matter, Journal Year: 2022, Volume and Issue: 5(12), P. 4274 - 4314

Published: Dec. 1, 2022

Language: Английский

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Type II Homo-Type Bi₂O₂Se Nanosheet/InSe Nanoflake Heterostructures for Self-Driven Broadband Visible–Near-Infrared Photodetectors

ACS Applied Nano Materials, Journal Year: 2023, Volume and Issue: 6(6), P. 4573 - 4583

Published: March 3, 2023

Bi2O2Se nanosheets, an emerging ternary non-van der Waals two-dimensional (2D) material, have garnered considerable research attention in recent years owing to their robust air stability, narrow indirect bandgap, high mobility, and diverse intriguing properties. However, most of them show dark current relatively low light on/off ratio slow response speed because the large charge carrier concentration bolometric effect, hindering further application low-energy-consuming optoelectronics. Herein, a homotype van heterostructure based on exfoliated n-InSe integrated with chemical vapor deposition (CVD)-grown n-Bi2O2Se nanosheets that type II band alignment was fabricated. The efficient interfacial separation, strong interlayer coupling, effective built-in electric field across heterointerface demonstrated excellent, stable, broadband self-driven photodetection range 400–1064 nm. Specifically, responsivity (R) 75.2 mA·W–1 specific detectivity (D*) 1.08 × 1012 jones were achieved under 405 nm illumination. Additionally, R 13.3 D* 2.06 1011 980 Meanwhile, ultrahigh Ilight/Idark over 105 fast time 5.8/15 ms illumination confirmed excellent photosensitivity behavior. Furthermore, could be enhanced 13.6 791 at drain–source voltage (Vds) 1 V, respectively, originating from lower potential barrier. This study suggested nanosheet/InSe nanoflake heterojunction can offer applications next-generation photodetectors consume energy exhibit performance.

Language: Английский

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Materials properties and device applications of semiconducting bismuth oxyselenide

InfoMat, Journal Year: 2024, Volume and Issue: 6(6)

Published: April 22, 2024

Abstract Layered two‐dimensional (2D) materials have garnered marvelous attention in diverse fields, including sensors, capacitors, nanocomposites and transistors, owing to their distinctive structural morphologies superior physicochemical properties. Recently, layered quasi‐2D materials, especially bismuth oxyselenide (Bi 2 O Se), are of particular interest, because different interlayer interactions from other 2D materials. On this basis, material offers richer more intriguing physics, high electron mobility, sizeable bandgap, remarkable thermal chemical durability, rendering it an utterly prospective contender for use advanced electronic optoelectronic applications. Herein, article reviews the recent advances related with Bi Se. Initially, its characterization, band structure, basic properties briefly introduced. Further, synthetic strategies preparation Se presented. Furthermore, applications field electronics optoelectronics, photocatalytic, solar cells sensing were summarized detail. Ultimately, challenges future perspectives included. image

Language: Английский

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