npj Flexible Electronics, Journal Year: 2024, Volume and Issue: 8(1)
Published: Nov. 23, 2024
Language: Английский
npj Flexible Electronics, Journal Year: 2024, Volume and Issue: 8(1)
Published: Nov. 23, 2024
Language: Английский
Advanced Functional Materials, Journal Year: 2025, Volume and Issue: unknown
Published: March 12, 2025
Abstract The naturally self‐limiting oxide formed on the surface of liquid metals can be exfoliated and transferred onto various substrates. This layer with a thickness few nanometers is typically highly transparent engineered for applications in large‐area optoelectronics. While incorporation solvated elements into interfacial post‐transition metal‐based demonstrated n ‐doping, achieving p ‐doping such ultrathin layers remains significant challenge. In this study, use dissolved indium (In), platinum (Pt), gold (Au), palladium (Pd), copper (Cu) gallium (Ga)‐based alloys investigated to create high‐entropy metal system. allows exfoliation p‐ doped layer, predominantly composed (Ga 2 O 3 ). these system results their atomic dispersion, Cu exhibiting limited presence. atomically dispersed Pt, Au, Pd scavenge oxygen during at moderate temperatures release them cooling down, promoting emergence trivalent metallic Ga layer. work presents novel doping strategy achieve ‐doped liquid‐metal‐derived layers, which maintain high transparency.
Language: Английский
Citations
0TrAC Trends in Analytical Chemistry, Journal Year: 2025, Volume and Issue: 189, P. 118279 - 118279
Published: April 23, 2025
Language: Английский
Citations
0Matter, Journal Year: 2025, Volume and Issue: unknown, P. 102159 - 102159
Published: May 1, 2025
Citations
0Sensors and Actuators B Chemical, Journal Year: 2025, Volume and Issue: unknown, P. 137414 - 137414
Published: Feb. 1, 2025
Language: Английский
Citations
0Matter, Journal Year: 2025, Volume and Issue: unknown, P. 102003 - 102003
Published: Feb. 1, 2025
Language: Английский
Citations
0ACS Applied Materials & Interfaces, Journal Year: 2024, Volume and Issue: 16(44), P. 60548 - 60555
Published: Oct. 25, 2024
Electronics is advancing toward greater diversity and sustainability by prioritizing energy efficiency cost-effectiveness. Metal oxide thin-film transistor (TFT) represents a technology at the forefront of next-generation sustainable electronics, exploring channel compositions crucial step in opening opportunities for developing device applications. This study presents first development n-channel α-Bi2O3-TFTs using 4 nm ultrathin prepared cost-effective vacuum-free solvent-free liquid metal printing method ambient air. Even pristine exhibited clear TFT action but required large negative gate bias to turn off due mainly excess carriers from oxygen vacancy α-Bi2O3 channel. Oxygen-containing post-annealing reduced both carrier subgap defect densities, enabling depletion enhancement-type with saturation mobility 2–4 cm2 V–1 s–1. Two types oxide-TFT-based inverter circuits, zero-VGS-NMOS CMOS inverters, were fabricated α-Bi2O3-TFTs, operating high voltage gain over 130. work demonstrates potential semiconductor materials electronics.
Language: Английский
Citations
1Molecules, Journal Year: 2024, Volume and Issue: 29(24), P. 5894 - 5894
Published: Dec. 13, 2024
We report the exfoliation of ultrathin gallium oxide (Ga2O3) films from liquid metal balloons, formed by injecting air into droplets eutectic gallium–indium alloy (eGaIn). These Ga2O3 enable selective adsorption carbon nanotubes (CNTs) dispersed in water, resulting formation a dense, percolating CNT network on their surface. The self-assembled provides versatile platform for device fabrication. As an example application, we fabricated chemiresistive gas sensor detecting simulants chemical warfare agents (CWAs), including diisopropyl methylphosphonate (DIMP), dimethyl (DMMP), and triethyl phosphate (TEP). exhibited reversible responses, high sensitivity, low limits detection (13 ppb DIMP, 28 DMMP, 53 TEP). findings highlight potential derived balloons integrating CNTs functional electronic devices.
Language: Английский
Citations
1npj Flexible Electronics, Journal Year: 2024, Volume and Issue: 8(1)
Published: Nov. 23, 2024
Language: Английский
Citations
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