Recent progress in memristor-based gas sensor (Gasistor; gas sensor + memristor): Device modeling, mechanisms, performance, and prospects DOI Creative Commons
Mohsin Ali, Doowon Lee, Ibtisam Ahmad

et al.

Sensors and Actuators Reports, Journal Year: 2024, Volume and Issue: unknown, P. 100269 - 100269

Published: Dec. 1, 2024

Language: Английский

Recent Developments on Novel 2D Materials for Emerging Neuromorphic Computing Devices DOI Creative Commons

Muhammad Hamza Pervez,

Ehsan Elahi,

Muhammad Asghar Khan

et al.

Small Structures, Journal Year: 2024, Volume and Issue: unknown

Published: Oct. 8, 2024

The rapid advancement of artificial intelligent and information technology has led to a critical need for extremely low power consumption excellent efficiency. capacity neuromorphic computing handle large amounts data with garnered lot interest during the last few decades. For applications, 2D layered semiconductor materials have shown pivotal role due their distinctive properties. This comprehensive review provides an extensive study recent advancements in materials‐based devices especially multiterminal synaptic devices, two‐terminal neuronal integration devices. Herein, wide range potential applications memory, computation, adaptation, intelligence is incorporated. Finally, limitations challenges based on novel are discussed. Thus, this aims illuminate design fabrication van der Waals (vdW) heterostructure materials, leveraging promising engineering techniques excel hardware implementations.

Language: Английский

Citations

4

An Artificial Olfactory System Based on Synaptic Transistors for Precepting Hazardous Gas to Simulate Organ Injury DOI

Junshuai Dai,

Yuan Li, Yiwen Wei

et al.

ACS Sensors, Journal Year: 2025, Volume and Issue: unknown

Published: May 14, 2025

Recent advances in artificial olfactory systems have attracted significant attention for their potential applications humanoid robots and intelligent nasal devices capable of identifying objects sensing hazards; however, the memory function is absent traditional gas sensors, which crucial to assess long-term exposure risks. Meanwhile, due high operation temperature requirement, sensors are usually difficult integrate with synaptic form systems. Here, we propose a novel device obtain memorize formaldehyde information. The composed an ion gel transistor integrated Ag-ZnO sensor, can simulate adverse effects human body make early warning. sensor detect recognize different concentrations as chemiresistive signal at room ultraviolet irradiation instead temperatures. formaldehyde-induced resistive changes transmitted gate voltage transistor, modulating channel conductance generate varying postsynaptic currents store information realize function. In addition, current data be imported into support vector machine (SVM) accurate identification, warning realized through system. This bionic system provides promising strategy development advanced intelligence danger warnings.

Language: Английский

Citations

0

Study of MASnI3 perovskite photodetectors prepared by the inverse temperature crystallization method in ambient atmosphere and the spin coating method in a glovebox DOI Creative Commons
Wen‐Chin Weng,

Yu-Ching Chien,

T.-W. Lee

et al.

Frontiers in Materials, Journal Year: 2025, Volume and Issue: 12

Published: May 20, 2025

In this study, we prepared MASnI 3 lead (Pb)-free halide perovskite metal-semiconductor-metal-type photodetectors through the inversion crystallization method under an atmospheric environment and spin-coating in a glove box, respectively. The scanning electron microscopy (SEM) images revealed different surface morphology. They show two types of growth models: inverse temperature (ITC) uses solvent volatilization, is reaction between precursors. For film obtained method, broad band photoluminescence (PL) spectrum at approximately 470 nm, corresponding to level transition 2.638 eV, was observed. On other hand, for narrow 773 1.604 This Burstein–Moss shift due introduction oxygen. addition, photocurrent device box orders magnitude higher than that by ITC method.

Language: Английский

Citations

0

Recent progress in memristor-based gas sensor (Gasistor; gas sensor + memristor): Device modeling, mechanisms, performance, and prospects DOI Creative Commons
Mohsin Ali, Doowon Lee, Ibtisam Ahmad

et al.

Sensors and Actuators Reports, Journal Year: 2024, Volume and Issue: unknown, P. 100269 - 100269

Published: Dec. 1, 2024

Language: Английский

Citations

3