Dual‐Sided Field Effect Passivation for Efficient and Stable Quasi‐2D Ruddlesden‐Popper Perovskite Photodetector DOI
Mingxuan Qiu, Wanjun Li, Yong Luo

et al.

Advanced Functional Materials, Journal Year: 2024, Volume and Issue: unknown

Published: Dec. 9, 2024

Abstract The nonradiative recombination presented at the quasi‐2D (Q‐2D) Ruddlesden–Popper perovskite surface/interface limits overall performance of photoelectric devices. Here, a dual‐sided field effect passivation (FEP) strategy to reduce is reported. By inserting high/low work function dielectric layers between layer and hole/electron transport layers, trap state density effectively reduced, resulting in longer carrier lifetime. Besides, dynamics synergistic mechanism chemical (CP) FEP are clarified detail. interfacial polarization caused by difference different prevents Shockley–Read–Hall (SRH) loss photogenerated electrons/holes improves charge transport. Benefiting from it, passivated photodetector has been improved effectively, achieving dark current 9.62 × 10 −11 A, linear dynamic range (LDR) width 171.4 dB, an ultra‐fast response time low 430 ns, which currently highest reported detection indicators Q‐2D photodetectors. In addition, intercalation inhibits decomposition greatly environmental stability. future, exploring CP materials for films one development directions studying efficient stable

Language: Английский

Perovskite solar cells DOI
Jiye Han,

Keonwoo Park,

Shaun Tan

et al.

Nature Reviews Methods Primers, Journal Year: 2025, Volume and Issue: 5(1)

Published: Jan. 16, 2025

Language: Английский

Citations

6

Simultaneous AoLP and DoLP Detection in a Bias‐Switchable PdSe2/MoS2/PdSe2 Heterojunction for Polarization Discrimination DOI Open Access
Xiaofei Ma, Zeping Wang,

Qinggang Qin

et al.

Advanced Materials, Journal Year: 2025, Volume and Issue: unknown

Published: March 10, 2025

On-chip polarized photodetectors play a crucial role in advancing ultra-compact optoelectronic devices for next-generation technologies. However, simultaneously detecting the angle of linear polarization (AoLP) and degree (DoLP) within single device remains challenging task, particularly due to inherently weak states found naturally anisotropic materials. In this paper, it is reported on development twisted monopole barrier photodetector based PdSe2/MoS2/PdSe2 configuration. This features rapid response time 7-12 µs. an imaging demonstration, operates as single-polarization photodetector, reconstructing AoLP DoLP distributions target objects through bias-switchable detection across wide spectral range, all without plasmonic/metasurface nanostructures or filters. Additionally, demonstrates bipolar characteristics under zero-bias conditions at room temperature, enabling dual-binary coding polarimetric-encoded communication. These combination positions highly promising candidate on-chip applications.

Language: Английский

Citations

2

Strategic Development of Memristors for Neuromorphic Systems: Low‐Power and Reconfigurable Operation DOI Open Access
Jang Woo Lee, Jiye Han, Boseok Kang

et al.

Advanced Materials, Journal Year: 2025, Volume and Issue: unknown

Published: March 25, 2025

The ongoing global energy crisis has heightened the demand for low-power electronic devices, driving interest in neuromorphic computing inspired by parallel processing of human brains and efficiency. Reconfigurable memristors, which integrate both volatile non-volatile behaviors within a single unit, offer powerful solution in-memory computing, addressing von Neumann bottleneck that limits conventional architectures. These versatile devices combine high density, low power consumption, adaptability positioning them as superior alternatives to traditional complementary metal-oxide-semiconductor (CMOS) technology emulating brain-like functions. Despite their potential, studies on reconfigurable memristors remain sparse are often limited specific materials such Mott insulators without fully unique reconfigurability. This review specifically focuses examining dual-mode operation, diverse physical mechanisms, structural designs, material properties, switching behaviors, applications. It highlights recent advancements low-power-consumption solutions memristor-based neural networks critically evaluates challenges deploying standalone or artificial systems. provides in-depth technical insights quantitative benchmarks guide future development implementation computing.

Language: Английский

Citations

1

Tin‐Based 2D/3D Perovskite Vertical Heterojunction for High‐Performance Synaptic Phototransistors DOI Creative Commons
Hok‐Leung Loi, Tianyue Wang, Dapeng Liu

et al.

Advanced Functional Materials, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 9, 2025

Abstract There is considerable interest in photodetectors based on nontoxic lead‐free perovskites. Tin‐based perovskites have been regarded as one type of the most promising candidate materials for these devices due to their relatively low bandgap and high light absorption coefficient. In this work, a stacked 2D/3D heterostructure perovskite films achieved through convenient vacuum drying process, which results an ultrahigh responsivity up 6.8 × 10 5 A W −1 detectivity 4.0 14 Jones at gate voltage −5 V across broad wavelength region from ultraviolet near‐infrared. Remarkably, device exhibits synaptic behavior, demonstrated by its photocurrent response both photonic electric stimuli, closely resembles memory behavior observed biological neural networks, applications opto‐synaptic devices.

Language: Английский

Citations

0

Synergistic Treatments of Bulk and Buried Surface in Tin‐Lead Binary Perovskite for Efficient Near‐Infrared Photodetectors DOI Open Access
Yi Wu, Shenghong Li, Jahangeer Ahmed

et al.

Advanced Functional Materials, Journal Year: 2025, Volume and Issue: unknown

Published: March 16, 2025

Abstract Tin‐lead binary perovskites, with their low bandgap and high absorption coefficient, hold great potential for application in near‐infrared (NIR) photodetectors. However, uncontrolled crystallization a defect density at the interface, particularly buried significantly hinder performance enhancement. To address this challenge, work incorporated quaternary ammonium salt tetrabutylammonium iodide (TBAI) into precursor solution. TBAPbI 3 formation energy accumulates rapidly bottom templates growth of 3D perovskite films, effectively reduces bulk density. Furthermore, also passivates FA + vacancy defect. These synergistic treatments passivate both surface defects varying nature, thereby limiting ingress oxygen film reducing oxidation Sn 2+ . The resulting photodetectors exhibited outstanding performance, including responsivity (0.53 A W −1 860 nm), an excellent detectivity (4.6 × 10 12 Jones), ultrafast response speed (93.2 ns), as well enhanced environmental stability. Leveraging its exceptional photoelectric flexible NIR photodetector is integrated wearable reflective oximetry detection system, achieving accurate non‐invasive assessment heart rate blood saturation. results highlight promising tin‐lead perovskites health monitoring applications.

Language: Английский

Citations

0

Quasi‐2D Sn‐Pb Perovskites: Advances in Optoelectronic Engineering and Device Applications DOI

Peiwen Gu,

Ting Zhang,

Sihui Peng

et al.

Advanced Functional Materials, Journal Year: 2025, Volume and Issue: unknown

Published: April 24, 2025

Abstract Tin‐lead (Sn‐Pb) mixed perovskites are promising candidates for single‐junction and tandem photovoltaic devices due to their tunable bandgap, enabling efficient light absorption. However, the advancement of these materials is impeded by significant challenges, particularly poor quality films resulting from facile oxidation Sn 2+ 4+ inherent difficulties in controlling crystallization kinetics. To mitigate issues, design low‐dimensional (LD) Sn‐Pb has gained considerable attention, as 2D structures associated with improved stability distinctive optoelectronic properties. This review systematically investigates characteristics arising dimensional reduction while elucidating intricate relationship between microstructure behavior. Additionally, substantial progress made applying within heterojunction perovskite solar cells (PSCs) highlighted. Emerging applications fields such near‐infrared (NIR) detection, circularly polarized memristors also discussed. Given current understanding, further exploration diverse ligands compositions systems crucial realizing full potential practical applications.

Language: Английский

Citations

0

Dual‐Sided Field Effect Passivation for Efficient and Stable Quasi‐2D Ruddlesden‐Popper Perovskite Photodetector DOI
Mingxuan Qiu, Wanjun Li, Yong Luo

et al.

Advanced Functional Materials, Journal Year: 2024, Volume and Issue: unknown

Published: Dec. 9, 2024

Abstract The nonradiative recombination presented at the quasi‐2D (Q‐2D) Ruddlesden–Popper perovskite surface/interface limits overall performance of photoelectric devices. Here, a dual‐sided field effect passivation (FEP) strategy to reduce is reported. By inserting high/low work function dielectric layers between layer and hole/electron transport layers, trap state density effectively reduced, resulting in longer carrier lifetime. Besides, dynamics synergistic mechanism chemical (CP) FEP are clarified detail. interfacial polarization caused by difference different prevents Shockley–Read–Hall (SRH) loss photogenerated electrons/holes improves charge transport. Benefiting from it, passivated photodetector has been improved effectively, achieving dark current 9.62 × 10 −11 A, linear dynamic range (LDR) width 171.4 dB, an ultra‐fast response time low 430 ns, which currently highest reported detection indicators Q‐2D photodetectors. In addition, intercalation inhibits decomposition greatly environmental stability. future, exploring CP materials for films one development directions studying efficient stable

Language: Английский

Citations

0