Vacuum‐Assisted Growth of Single Crystal Perovskite Arrays toward Ultralow Dark Current Photodetectors DOI

Suicai Zhang,

Yanqi Ge,

Xuan Qin

et al.

Advanced Functional Materials, Journal Year: 2024, Volume and Issue: unknown

Published: Nov. 20, 2024

Abstract Metal halide perovskites are widely employed in photodetectors (PDs) due to their exceptional photoelectric conversion ability. However, the high dark current induced by defect states during perovskite crystallization has not been well resolved, which enormously deteriorates sensitivity of PD. Herein, a vacuum‐assisted template‐confined growth method is proposed successfully fabricate high‐quality single crystal microwire arrays with low and superior characteristics. Experimentally theoretically, it proved that fabricated PDs exhibit performance commendable responsivity 0.49 A W −1 detectivity surpassing 1.21 × 10 13 Jones, profits from ultralow ≈200 fA at 5 V bias. Particularly, PD behaves characteristics flexible robust stability high‐definition image recognition. This work provides universal strategy for optimizing quality constructing high‐performance optoelectronic devices many scenarios.

Language: Английский

Ion Migration Suppression via Doping Multivalent Cations in Perovskite for High Thermal Stability X-ray Detectors DOI

Xiaolong Feng,

Lu Zhang,

Xiaofeng Feng

et al.

ACS Energy Letters, Journal Year: 2025, Volume and Issue: unknown, P. 685 - 695

Published: Jan. 8, 2025

Language: Английский

Citations

1
2D Perovskite/Organic Heterojunction Black‐Light Level Photodetector with Record‐High Detectivity DOI Open Access

Yuying Xi,

Guohui Li,

Jinyang Jiao

et al.

Advanced Functional Materials, Journal Year: 2025, Volume and Issue: unknown

Published: Feb. 9, 2025

Abstract 2D single‐crystal perovskites have attracted interest due to their excellent photoelectric properties and improved moisture stability, making them promising for various optoelectronic applications. However, challenges remain, particularly low carrier collection efficiency caused by high exciton binding energy. This study introduces self‐powered heterojunction photodetectors (PDs) based on (PEA) 2 PbI 4 /ZnPc, enhancing conduction the configuration of lateral electrodes regulating carrier/exciton dynamics via design. The PD achieves an impressive detectivity 1.14 × 10 16 Jones, a 770% increase compared control, with detection limit reaching black‐light level 3 pW cm −2 under 532 nm at 1 V bias. performance surpasses all previously reported perovskite PDs is attributed suppressed dark current increased photocurrent. built‐in electric field counteracts part forward bias, reducing intrinsic motion in dark. It also effectively dissociates photogenerated excitons, minimizing radiative recombination illumination. allows device detect weak light self‐driven mode. Additionally, extends detectable wavelength 980 nm. has been successfully applied acousto‐optic conversion communication, highlighting its potential low‐power, energy‐efficient optical communication solutions.

Language: Английский

Citations

0
Ultra-low dark current photodetector based on two-dimensional CuCrP2S6 material DOI

Xin Cheng,

J. Peng,

Yanan Cao

et al.

Applied Physics Letters, Journal Year: 2025, Volume and Issue: 126(17)

Published: April 28, 2025

Metal thiophosphates have recently emerged as promising two-dimensional (2D) materials for the next-generation photodetectors due to their unique physical and optoelectronic properties. Among them, CuCrP2S6 (CCPS) has shown strong potential photodetection applications. In this study, we developed a photodetector based on CCPS nanoflakes. The optimized device, featuring 3 μm channel length 60 nm layer, exhibited impressive performance, with responsivity of 7 mA/W detectivity 6 × 108 Jones 450 light intensity 0.02 mW/mm2. device achieved an exceptionally low dark current ∼300 fA, surpassing other reported 2D layer-based photodetectors. long-term stability was demonstrated through 1500 cyclic pulses. Furthermore, array constructed, showcasing outstanding optical imaging capabilities operational stability. These findings provide crucial experimental evidence supporting future fabrication large-scale, high power, highly stable arrays.

Language: Английский

Citations

0
Van der Waals Heterojunction Based Self‐Powered Biomimetic Dual‐Mode Sensor for Precise Object Identification DOI Open Access
Xu He,

Xinxu Zhu,

Zhaoan Hong

et al.

Advanced Materials, Journal Year: 2024, Volume and Issue: unknown

Published: Oct. 21, 2024

Abstract The design and fabrication of materials that can concurrently respond to light gas within the dual‐modal recognition domain present a significant challenge due contradictory structural requirements. This innovative strategy introduces type‐I heterojunction, combining properties Sb 2 Te 3 WSe nanosheets, overcome these obstacles. heterojunction is prepared through precise stacking approach create single‐side barrier on valence band near‐zero offset conduction band. resulting /WSe demonstrates unparalleled performance, showcasing best integrated photoelectric sensing performance in single device date. Based above features, successfully integrates visual olfactory achieving first biomimetic visual‐olfactory dual‐mode device. simulation increased accuracy distinguishing electric fuel‐powered cars from ≈50% ≈96%. work novel creating efficient, self‐powered materials, paving way for next‐generation dual‐model devices with broad applications environmental protection, medical care, other fields.

Language: Английский

Citations

2
High‐Sensitivity and Fast‐Response Photomultiplication Type Photodetectors Based on Quasi‐2D Perovskite Films for Weak‐Light Detection DOI
Guohua Ma,

Yanna Hou,

Zhenwang Luo

et al.

Small, Journal Year: 2024, Volume and Issue: unknown

Published: Sept. 25, 2024

Abstract Photovoltaic photodiodes often face challenges in effectively harvesting electrical signals, especially when detecting faint light. In contrast, photomultiplication type photodetectors (PM‐PDs) are renowned for their exceptional sensitivity to weak signals. Here, an advanced PM‐PD is introduced based on quasi 2D Ruddlesden‐Popper (Q‐2D RP) perovskites, optimized light detection at minimal operating voltages. The abundant traps the Q‐2D RP surface capture charge carriers, inducing a trap‐assisted tunneling mechanism that leads (PM) effect. Deep‐lying trap states within bulk accelerate carrier recombination, resulting outstanding rise/fall time of 1.14/1.72 µs PM‐PDs. achieves remarkable response level up 45.89 A W −1 and extraordinary external quantum efficiency 14400% V under illumination 1 µW cm − 2 . intrinsic high resistance perovskite results low dark current, enabling impressive detectivity 4.23 × 10 12 Jones noise current V. Furthermore, practical application PM‐PDs has been demonstrated weak‐light, high‐rate communication systems. These findings confirm significant potential perovskites suggest new directions developing low‐power, high‐performance future applications.

Language: Английский

Citations

1
Vacuum‐Assisted Growth of Single Crystal Perovskite Arrays toward Ultralow Dark Current Photodetectors DOI

Suicai Zhang,

Yanqi Ge,

Xuan Qin

et al.

Advanced Functional Materials, Journal Year: 2024, Volume and Issue: unknown

Published: Nov. 20, 2024

Abstract Metal halide perovskites are widely employed in photodetectors (PDs) due to their exceptional photoelectric conversion ability. However, the high dark current induced by defect states during perovskite crystallization has not been well resolved, which enormously deteriorates sensitivity of PD. Herein, a vacuum‐assisted template‐confined growth method is proposed successfully fabricate high‐quality single crystal microwire arrays with low and superior characteristics. Experimentally theoretically, it proved that fabricated PDs exhibit performance commendable responsivity 0.49 A W −1 detectivity surpassing 1.21 × 10 13 Jones, profits from ultralow ≈200 fA at 5 V bias. Particularly, PD behaves characteristics flexible robust stability high‐definition image recognition. This work provides universal strategy for optimizing quality constructing high‐performance optoelectronic devices many scenarios.

Language: Английский

Citations

1