Bias‐Switchable Photodetection and Photosynapse Dual‐Functional Devices Based on 2D Perovskite/Organic Heterojunction for Imaging‐to‐Recognition Conversion

Advanced Materials, Journal Year: 2024, Volume and Issue: unknown

Published: Dec. 8, 2024

Abstract Optoelectronic devices with imaging and recognition capabilities are crucial for developing artificial visual system (AVS). Bias‐switchable photodetection photosynaptic have been developed using 2D perovskite oxide/organic heterojunctions. This unique structure allows modulated carrier dynamics under varied bias conditions, enabling the to function as photodetectors without photosynapses bias. At zero bias, device achieves high responsivity (≈0.36 A W −1 at 320 nm) rapid response speed (0.57 s). Under a −0.5 V it exhibits persistent photoconductivity (PPC), resulting in neuromorphic synaptic behaviors paired‐pulse facilitation (PPF) index exceeding 300%. Moreover, an 8 × sensor array demonstrates image sensing memory capabilities, showing situ enhanced when switching from 0 V, over 200 s of memory. The processing abilities further explored by constructing AVS 28 combined neural network (ANN). adjustable weight different reverse biases allowed optimized simulated recognition, achieving accuracy 92% after 160 training epochs. work presents novel method creating dual‐functional devices, paving way more integrated efficient AVS.

Language: Английский

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Polarization‐Modulated Multi‐Mode Optoelectronic Synaptic Transistor for Sensing‐Memory‐Logic Computing and Optical Wireless Communication

Advanced Functional Materials, Journal Year: 2025, Volume and Issue: unknown

Published: Feb. 16, 2025

Abstract Neuromorphic machine vision has attracted much attention in the field of artificial intelligence post‐Moore era. However, current strategies still suffer from limited modulation, single function, and complex device structure. Here, integration sensing, memory, logic computing, optical wireless communication is realized a 2D van der Waals α ‐In 2 Se 3 /SnS ferroelectric heterojunction field‐effect transistor. The exhibits excellent nonvolatile memory performances including large window (≈76 V), endurance (>800 cycles), good retention time (>10 4 s). can also emulate synaptic behaviors well such as short‐term to long‐term transitions, experiential learning, associative learning. And reconfigurable gates (AND, OR) be implemented by controlling electrical inputs. In addition, output triggered pulse sequences express international English alphabet Morse code (A‐Z), which expected used for human–machine interfaces. This work emphasizes that heterojunctions have advantages efficient modulation high function integration, great potential application development future neuromorphic systems.

Language: Английский

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Progress in 2D Material‐Based Infrared Photodetectors for Intelligent Vision Applications

Advanced Functional Materials, Journal Year: 2025, Volume and Issue: unknown

Published: April 14, 2025

Abstract Infrared (IR) photodetectors based on narrow‐bandgap 2D materials and heterojunctions have shown great promise in constructing IR sensing systems, including optical communication, security monitoring, thermal imaging, astronomy exploration. In recent years, significant progress has been made developing performance enhancement strategies for material‐based integrating them with artificial neural networks, paving the way sophisticated intelligent applications. This review offers a detailed overview of advancements enhancing photodetection capabilities fostering related First, concise underlying mechanisms key metrics designed operation region is illustrated. Next, sensitivity light absorption photodetectors, defect engineering, heterostructure construction, field enhancement, are discussed. Then, advances applications summarized, particular focus innovations that enable intelligent, real‐time processing Finally, highlights challenges provides forward‐looking perspective development advanced photodetectors.

Language: Английский

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Hydrothermally Synthesized Cobalt-Doped VS₂ Nanosheets for Optical Limiting Application

ACS Applied Nano Materials, Journal Year: 2025, Volume and Issue: unknown

Published: April 30, 2025

Language: Английский

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High Rectification Ratio Self‐Rectifying Memristor Crossbar Array for Convolutional Neural Network Operations

Small, Journal Year: 2025, Volume and Issue: unknown

Published: April 25, 2025

Abstract Oxide‐based self‐rectifying memristors have emerged as promising candidates for the construction of neural networks, owing to their advantageous features such high‐density integration, low power consumption, 3D stackability, straightforward fabrication processes, and compatibility with complementary metal‐oxide‐semiconductor (CMOS) technology. Notwithstanding these merits, there remains considerable scope suppression parasitic currents in large‐scale memristor arrays, which poses a notable challenge development extensive networks capable executing intricate computational tasks. This study introduces 1 kbit array based on Pt/HfO 2 /Ti structural units. Individual devices this not only exhibit switching ratios exceeding 10 3 , but also maintain rectification greater than 5 excellent negative performance effectively suppresses latent path array. Moreover, convolutional calculation logic forward inference process 8‐bit are demonstrated array, verifies feasibility using arrays simulate all hardware operations. Ultimately, complete network system is constructed, achieving recognition rate up 98% handwriting task. work provides new strategy toward implementation all‐hardware computing networks.

Language: Английский

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In-Situ Fabricated Transparent Flexible Nanowire Device with Wavelength-Regulated Dual-Function of Photodetector and Photonic Synapse

ACS Applied Materials & Interfaces, Journal Year: 2024, Volume and Issue: 16(42), P. 57512 - 57523

Published: Oct. 14, 2024

Integrating the dual functionalities of a photodetector and photonic synapse into single device is challenging due to their conflicting requirements for photocurrent decay rates. This study addresses this issue by seamlessly depositing transparent indium tin oxide (ITO) electrodes onto self-oriented copper hexadecafluoro-phthalocyanine (F16CuPc) nanowires growing horizontally along hot-stamped periodic nanogrooves on flexible polyimide plastic film. in-situ-fabricated achieves bending-stable through wavelength regulation while maintaining high transparency flexibility. Upon exposure 450–850 nm light, exhibits rapid sensitive photoresponse with excellent bending stability, making it ideal optical sensing in both visible near-infrared spectra. More importantly, excitation postsynaptic current when exposed light spikes below 405 nm. enables successful emulation various biological synaptic functionalities, including paired-pulse facilitation, spike-number-dependent plasticity, spike-duration-dependent spike-rating-dependent configurable plasticity between short-term long-term memory learning capabilities. Utilizing an artificial neural network recognition rate 95% after 57 training epochs. Its ability switch photodetection modes adjusting marks significant advancement field multifunctional electronics based nanowire arrays.

Language: Английский

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Bio‐Inspired P‐type TeSeO_x Synaptic Transistor Based on Multispectral Sensing for Neuromorphic Visual Multilevel Nociceptor

Small Methods, Journal Year: 2024, Volume and Issue: unknown

Published: Nov. 24, 2024

Abstract The development of neuromorphic color vision has significant research implications in the fields machine and artificial intelligence. By mimicking processing mechanisms energy‐efficient biological visual systems, it offers a unique potential for real‐time environment perception dynamic adaptability. This paper reports on multispectral sensing synaptic device based novel p‐type TeSeO x transistor, applied to multilevel nociceptor. Due intrinsic properties , its narrow bandgap allows multi‐wavelength (405, 532, 655 nm) response, oxide semiconductor‐based persistent photoconductivity converts optical signals into stored electrical signals, successfully emulating key characteristics such as excitatory postsynaptic current (EPSC), multi‐pulse facilitation, transition from short‐term long‐term memory. Additionally, simulates learning, forgetting, relearning behaviors, well image memory under tricolor light. Finally, using pain stimulus, fundamental functions nociceptor are realized, including “threshold,” “non‐adaptation,” “relaxation,” “nociceptive sensitization”. More importantly, by light, is acheived. These results have advance autonomous driving, vision, intelligent alert systems.

Language: Английский

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An asymmetric Schottky black phosphorus transistor for enhanced broadband photodetection and neuromorphic synaptic functionality

Applied Physics Letters, Journal Year: 2024, Volume and Issue: 125(24)

Published: Dec. 9, 2024

Artificial synapses that mimic the functions of biological neurons are fundamental elements brain-like computing. The development artificial synaptic devices is essential for future applications in computer vision information processing capabilities, as well fields intelligence and internet things. However, sensitivity detection range optoelectronic synapses, which can also serve self-powered photodetectors, pose urgent challenges to be addressed, particularly achieving broadband infrared using individual two-dimensional semiconductor materials. In this report, a black phosphorus (BP)-based transistor constructed based on potential difference between BP nanoflake Au electrodes with varying thicknesses. BP-based demonstrates capability photodetection across wide from 405 1064 nm. Furthermore, assistance an external voltage 1 V, bandwidth extends 2200 specific detectivity responsivity high 2.47 × 1011 1.94 Jones, 34 20 A/W under 1550 nm light, respectively. Moreover, emulate “learning-forgetting” behaviors light nm, providing effective approach recognition systems. This research contributes advancement holds promise developments neuromorphic

Language: Английский

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