Tunable WSe2–MoSe2 Lateral Heterojunction Photodetector Based on Piezoelectric and Flexoelectric Effects DOI

Sunwen Zhao,

Xiaochi Tai,

Runhan Xiao

et al.

ACS Applied Materials & Interfaces, Journal Year: 2024, Volume and Issue: unknown

Published: Dec. 3, 2024

Two-dimensional transition metal dichalcogenides (TMDs) with piezoelectric effects are ideal materials for future wearable devices. While enhancing the performance by forming vertical heterojunctions, shortcomings such as contamination at heterojunction interface and limited built-in electric field width have been noticed. In this work, a lateral of monolayer WSe2–MoSe2 type-II band alignment was employed to amplify electromechanical optoelectronic efficiency. The considerable (BFW) in facilitates rapid separation carriers. lattice mismatch induced flexoelectric effect during growth. under external strain can regulate photodetector device. Under compressive −0.93%, photocurrent increased 9.1 times compared tensile 0.47%. Flexoelectric reduce dark current no strain. This work reveals roles photoelectric conversion, suggesting devices may be applied flexible low-light detection.

Language: Английский

Dielectric enhancement by inorganic nano-fillers for triboelectric optimization DOI
Xuemei Wang, Yihe Zhang,

Hongwei Liao

et al.

Journal of Materials Chemistry A, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 1, 2025

The relationship between TENG performance and dielectric enhancement by inorganic nano-fillers was comprehensively systematically analysed.

Language: Английский

Citations

1
A suspended InSe membrane-based metal-semiconductor junction with excellent performance via flexoelectricity DOI

Jiyan Wu,

Ze He,

Guihong Zuo

et al.

Materials Today Physics, Journal Year: 2025, Volume and Issue: unknown, P. 101701 - 101701

Published: March 1, 2025

Language: Английский

Citations

0
Improving the piezoelectric response of Ba0.85Ca0.15Zr0.10Ti0.90O3 ferroelectric ceramics via the asymmetric-shape-induced flexoelectric effect DOI
Hang Li,

Jinsong Xu,

Hanbin Zheng

et al.

Journal of Alloys and Compounds, Journal Year: 2025, Volume and Issue: unknown, P. 178777 - 178777

Published: Jan. 1, 2025

Language: Английский

Citations

0
A Suspended InSe Membrane-Based Metal-Semiconductor Junction with Excellent Performances via Flexoelectricity DOI
Junjie Wu, Ze He,

Guihong Zuo

et al.

Published: Jan. 1, 2025

Language: Английский

Citations

0
Flexoelectricity causes surface piezoelectric-like effects in dielectrics DOI
Hossein Mohammadi, Francesco Greco, David Codony

et al.

International Journal of Mechanical Sciences, Journal Year: 2025, Volume and Issue: unknown, P. 110162 - 110162

Published: March 1, 2025

Language: Английский

Citations

0
Tunable WSe2–MoSe2 Lateral Heterojunction Photodetector Based on Piezoelectric and Flexoelectric Effects DOI

Sunwen Zhao,

Xiaochi Tai,

Runhan Xiao

et al.

ACS Applied Materials & Interfaces, Journal Year: 2024, Volume and Issue: unknown

Published: Dec. 3, 2024

Two-dimensional transition metal dichalcogenides (TMDs) with piezoelectric effects are ideal materials for future wearable devices. While enhancing the performance by forming vertical heterojunctions, shortcomings such as contamination at heterojunction interface and limited built-in electric field width have been noticed. In this work, a lateral of monolayer WSe2–MoSe2 type-II band alignment was employed to amplify electromechanical optoelectronic efficiency. The considerable (BFW) in facilitates rapid separation carriers. lattice mismatch induced flexoelectric effect during growth. under external strain can regulate photodetector device. Under compressive −0.93%, photocurrent increased 9.1 times compared tensile 0.47%. Flexoelectric reduce dark current no strain. This work reveals roles photoelectric conversion, suggesting devices may be applied flexible low-light detection.

Language: Английский

Citations

0