Reconfigurable Ge2Sb2Te5/MoS2 Heterojunction Photodetector with High‐Contrast Responsivity for Retinomorphic Vision Sensing DOI
Yu Wang, Zhou Yang, Haoran Mu

et al.

Advanced Optical Materials, Journal Year: 2025, Volume and Issue: unknown

Published: April 18, 2025

Abstract Reconfigurable photodetectors are crucial for applications such as adaptive sensing and dynamic imaging. However, conventional devices based on materials silicon typically require external electric fields additional memory units, resulting in increased system complexity energy consumption. Here, a self‐driven, reconfigurable, controllable photoresponse with large responsivity contrast of up to 100 is achieved using Ge 2 Sb Te 5 (GST)/MoS heterojunction, leveraging the integration reversible phase‐transition capability phase‐change (PCMs) nonvolatile reconfigurable optoelectronic merits two‐dimensional (2D) materials. The GST/MoS heterojunction photodetector also demonstrates fast response times, excellent cycling stability, linear photocurrent–power relationship, supporting its use real‐time imaging systems. Furthermore, 3 × array implemented an optical convolution kernel in‐sensor image processing, achieving high‐quality recognition, enhancement, edge detection. This work positions phase‐change‐2D heterojunctions promising platform next‐generation photodetection intelligent technologies.

Language: Английский

Reconfigurable Ge2Sb2Te5/MoS2 Heterojunction Photodetector with High‐Contrast Responsivity for Retinomorphic Vision Sensing DOI
Yu Wang, Zhou Yang, Haoran Mu

et al.

Advanced Optical Materials, Journal Year: 2025, Volume and Issue: unknown

Published: April 18, 2025

Abstract Reconfigurable photodetectors are crucial for applications such as adaptive sensing and dynamic imaging. However, conventional devices based on materials silicon typically require external electric fields additional memory units, resulting in increased system complexity energy consumption. Here, a self‐driven, reconfigurable, controllable photoresponse with large responsivity contrast of up to 100 is achieved using Ge 2 Sb Te 5 (GST)/MoS heterojunction, leveraging the integration reversible phase‐transition capability phase‐change (PCMs) nonvolatile reconfigurable optoelectronic merits two‐dimensional (2D) materials. The GST/MoS heterojunction photodetector also demonstrates fast response times, excellent cycling stability, linear photocurrent–power relationship, supporting its use real‐time imaging systems. Furthermore, 3 × array implemented an optical convolution kernel in‐sensor image processing, achieving high‐quality recognition, enhancement, edge detection. This work positions phase‐change‐2D heterojunctions promising platform next‐generation photodetection intelligent technologies.

Language: Английский

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