Efficient Optical Control of Quantum Tunneling Devices Based on Layered Violet Phosphorus

Advanced Optical Materials, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 13, 2025

Abstract Electron tunneling devices attract attention due to their potential applications in integrated circuits, memories, and high‐frequency oscillators. However, limited works are devoted the optical control of electron processes. The main reason is low concentration photogenerated carriers concerning equilibrium values heavy‐doped regions. In this work, violet phosphorus (VP) with a unique bilayer tubular structure supplies an excellent platform for investigating mechanisms under photo illumination. A VP‐based vertical diode made metal‐insulator‐semiconductor (MIS) stacking presented. increase current by ≈4.2 times through illumination, leading considerable rectification ratio. addition, three‐terminal field‐effect transistor (TFET) from VP flake different thicknesses also interband electrons results tunable negative differential transconductance (NDT) at room temperature. photoillumination can modulate onset NDT region variation density states Fermi level alignment channel drain region. These advance understanding transport devices, showing great exploiting novel 2D multifunctional interactions between light carriers’ tunneling.

Language: Английский

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Interlayer Charge Transition and Broadband Polarization Photodetection and Imaging Based on In₂Se₃/ReS₂ van der Waals Heterostructure

Laser & Photonics Review, Journal Year: 2024, Volume and Issue: unknown

Published: Aug. 15, 2024

Abstract 2D van der Waal (vdWs) heterostructures present unique optoelectronic characteristics, making them favorable layer structures for constructing promising devices with multifunctional applications. Nevertheless, as a result of significant interface recombination the photogenerated electron‐hole pairs and presence various absorption edges within constituent layers, they are prone to experiencing low carrier collection efficiency. In this work, combined theoretical experimental investigation presented on 2 Se 3 /ReS vdWs heterostructure, aimed at developing high‐performance broadband photodetector multifunctionalities. investigations, it is observed that, by adjusting polarization states (+P −P) in layer, band alignment can be effectively tuned from type‐I type‐II, providing narrow bandgap ≈0.65 eV, which beyond that their individual constituents. As photodetector, device shows photoresponse ranging 532 1550 nm ultrahigh responsivity (99.36 AW −1 ), detectivity (3.5 × 10 13 Jones), external quantum efficiency (34195%). Additionally, competitive sensitivity across broad spectrum imagining capability heterostructure. This study demonstrates heterostructure provides technique

Language: Английский

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In-situ electrochemical XRD and raman probing of ion transport dynamics in ionic liquid-etched Ti3C2Tx MXene for energy storage applications

Chemical Engineering Journal, Journal Year: 2024, Volume and Issue: unknown, P. 158232 - 158232

Published: Dec. 1, 2024

Language: Английский

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Enhancing Valley Splitting and Anomalous Valley Hall Effect in V-Doped Janus MoSeTe monolayer

Physical Chemistry Chemical Physics, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 1, 2025

Exploring valleytronics in two-dimensional materials is of great significance for the development advanced information devices. In this study, we investigate valley polarization and electronic properties V-doped 2H-phase Janus MoSeTe by using first-principles calculations. Our results reveal a remarkable spin splitting up to 60 meV, driven breaking time-reversal symmetry due magnetic effect V 3d orbitals. Additionally, observe anomalous Hall (AVHE) monolayer, showcasing its potential valleytronic applications. Importantly, found that can be effectively modulated applying external strain, with notable changes at different strain levels. These findings suggest monolayer an ideal material design tunable, controllable devices, offering new opportunities next generation valley-based technologies.

Language: Английский

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Prediction on a Missing Ferroelectric Butterfly Phosphorus Allotrope and Its Energy-Favorable Low-Dimensional Forms

The Journal of Physical Chemistry Letters, Journal Year: 2025, Volume and Issue: unknown, P. 2029 - 2038

Published: Feb. 18, 2025

Elemental phosphorus exhibits a remarkable diversity of allotropes, including black, white, and violet phosphorus, each with unique structural electronic properties. Recently, has experienced renaissance in scientific interest for its potential applications across various fields. Among these, the red (RP) possesses considerable variety stacking configurations. By analyzing preference P21 building block Type II, IV, V RP we proposed novel butterfly connected scheme. This new structure's stability was well confirmed by ab initio calculations. It is characterized as semiconductor band gap 1.4 eV, exhibiting appearance. Additionally, this structure demonstrates ferroelectric behavior, making it an instance single-element materials. Furthermore, our investigation chain-type structures within carbon nanotubes (CNTs) revealed that type connection scheme represents lowest energy configuration specifically sized CNTs.

Language: Английский

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2D PdSe2: Pioneering innovations in polarized photodetection

Journal of Electronic Science and Technology, Journal Year: 2025, Volume and Issue: unknown, P. 100305 - 100305

Published: Feb. 1, 2025

Language: Английский

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Thickness‐Dependent Photoluminescence Oscillations in Layered Violet Phosphorus

Laser & Photonics Review, Journal Year: 2025, Volume and Issue: unknown

Published: April 8, 2025

Abstract The robust excitonic effects in layered violet phosphorus (VP) render it an ideal platform for exploring photoluminescence (PL) at 2D nanoscale. However, limited research on its luminescent properties constrains understanding and hinders potential future developments. Here, a detailed investigation into the thickness‐dependent PL evolution multilayer VP samples is conducted, where their thicknesses are precisely controlled through oxygen plasma dry etching technique. pronounced exciton‐trion interaction determines envelop of spectra. And as time increases, leading to decreased sample's thickness, spectra peak blue‐shifts, exciton‐trionic ratio changes. unusual spectral oscillation small number (≈12%) discovered, despite majority exhibiting typical overall decaying tendency with decreasing thicknesses. Subsequent characterizations, especially cross‐sectional high‐angle annular dark field scanning transmission electron microscopy (HAADF‐STEM) images measurements second harmonic generation (SHG), hint possible existence allotrope new‐phase VP. First‐principles calculations, conjunction energy band theory analysis, employed delve elucidate alterations resulting from carriers non‐radiative/radiative recombination different materials. This work lays foundation VPs.

Language: Английский

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Graphene Electrode-Enhanced InSe/WSe2 van der Waals Heterostructure for High-Performance Broadband Photodetector with Imaging Capabilities

Journal of Alloys and Compounds, Journal Year: 2024, Volume and Issue: 1006, P. 176356 - 176356

Published: Sept. 4, 2024

Language: Английский

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Janus 2D Transition Metal Dichalcogenides: Research Progress, Optical Mechanism and Future Prospects for Optoelectronic Devices

Laser & Photonics Review, Journal Year: 2024, Volume and Issue: unknown

Published: Nov. 30, 2024

Abstract Exploring the extraordinary optoelectronic properties of two‐dimensional (2D) materials to construct advanced devices is a major goal for academic researchers and industrialists. Emerging 2D Janus are innovative class in which two sides either asymmetrical functionalized or exposed different environments. Distinctive features such as tunable bandgaps, electronic structures, presence Rashba effects, excitonic piezoelectric effects etc. make its magnificent candidates devices. The van der Waals (vdWs) heterostructure with novel assembled by low dimensional provides new opportunities promising applications. This review aims offer recent advances inside mechanism vdWs from an optoelectronics point view. Here, latest progress including their heterostructures perspective theoretical prediction, synthesis techniques presented. investigation physical device applications summarized. Finally, future directions, challenges, regarding research process discussed designing

Language: Английский

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Enhanced Photovoltaic Performance and X-ray Sensing Capabilities of MoSe₂ Nanosheet-Based Bulk Heterojunction Polymer Solar Cells: A Comparative Study of Power Conversion Efficiency and Sensitivity

ACS Applied Electronic Materials, Journal Year: 2024, Volume and Issue: 7(1), P. 590 - 600

Published: Dec. 23, 2024

This study focuses on the photovoltaic performance of MoSe2 nanosheet-based bulk heterojunction polymer solar cells, with particular attention paid to power conversion efficiency (PCE) and other important parameters. The PCE values pure cell are 5.88%, while those NS1, NS2, NS3 6.61, 8.39, 7.37%, respectively. optimized NS2 hybrid at 5 wt % in active layer exhibits highest 8.39%, short-circuit current density 15.865 mA/cm2, open-circuit voltage 0.837 V which outperforming configurations. Turning our X-ray detectors, we find that same concentration works best, producing sensitivity 2.65 mA/Gy·cm2 a collected 8.85 μA/cm2. These results highlight how versatile NSs improving cells detectors. stands out as particularly promising configuration for effective energy sensing applications.

Language: Английский

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