Modulating Poly(methyl methacrylate) Gate Dielectric Behavior with Cosolvent and Low-Temperature Processing for Low-Threshold-Voltage Flexible Organic Field-Effect Transistors DOI
Satayender K. Sangwan, Sk Shaharukh, S. K. Ray

et al.

ACS Applied Electronic Materials, Journal Year: 2024, Volume and Issue: unknown

Published: Dec. 23, 2024

Low-power flexible electronic and bioelectronic applications are in substantial demand of low-threshold-voltage organic field-effect transistors (OFETs). Detailed studies on surface interfacial properties have shown that the annealing temperature, dipole moment, dielectric constant processing solvents impact various device parameters such as capacitance density, threshold voltage, stability, density charge trapping states. In this work, we achieved operation OFETs by employing a mixture comprising low high moments to process poly(methyl methacrylate) (PMMA). A blend with an optimized ratio t-butyl alcohol acetonitrile was used prepare PMMA gate layer. Both boiling point 82 °C, which implies very temperature treat films. This helps realizing devices unconventional substrates requiring low-temperature processing. The fabricated glass yielded good electrical performance, exhibiting voltage −3.5 ± 0.02 V, bias stress mechanical flexibility. Through combination experimental studies, aim provide insights into how solvent choice influences layer OFETs. Therefore, our work demonstrates efficacy potential engineering approach utilizing mixed layer, facilitating OFET devices.

Language: Английский

Recent Strategies in Channel Modulation for High-Performance Neuromorphic Computing Based on Electrolyte-Gated Organic Synaptic Transistors DOI
Dongyeong Jeong,

Seokkyu Kim,

Maozhong An

et al.

Korean Journal of Chemical Engineering, Journal Year: 2025, Volume and Issue: unknown

Published: April 3, 2025

Language: Английский

Citations

0

Modulating Poly(methyl methacrylate) Gate Dielectric Behavior with Cosolvent and Low-Temperature Processing for Low-Threshold-Voltage Flexible Organic Field-Effect Transistors DOI
Satayender K. Sangwan, Sk Shaharukh, S. K. Ray

et al.

ACS Applied Electronic Materials, Journal Year: 2024, Volume and Issue: unknown

Published: Dec. 23, 2024

Low-power flexible electronic and bioelectronic applications are in substantial demand of low-threshold-voltage organic field-effect transistors (OFETs). Detailed studies on surface interfacial properties have shown that the annealing temperature, dipole moment, dielectric constant processing solvents impact various device parameters such as capacitance density, threshold voltage, stability, density charge trapping states. In this work, we achieved operation OFETs by employing a mixture comprising low high moments to process poly(methyl methacrylate) (PMMA). A blend with an optimized ratio t-butyl alcohol acetonitrile was used prepare PMMA gate layer. Both boiling point 82 °C, which implies very temperature treat films. This helps realizing devices unconventional substrates requiring low-temperature processing. The fabricated glass yielded good electrical performance, exhibiting voltage −3.5 ± 0.02 V, bias stress mechanical flexibility. Through combination experimental studies, aim provide insights into how solvent choice influences layer OFETs. Therefore, our work demonstrates efficacy potential engineering approach utilizing mixed layer, facilitating OFET devices.

Language: Английский

Citations

0