2D/Organic Photovoltage Field‐Effect Transistors DOI
Jiayue Han,

Tao Tuo,

Wenjie Deng

et al.

Laser & Photonics Review, Journal Year: 2025, Volume and Issue: unknown

Published: April 23, 2025

Abstract Detectors typically face a trade‐off between achieving high responsivity and high‐speed performance. Balancing these characteristics remains challenge. Developing broadband infrared detection that achieves while maintaining operation at room temperature is key objective for the next generation of sensing technologies. In this work, novel 2D/organic hybrid photogating field‐effect transistor (PVFET) capable spanning 488–1550 nm reported. This device simultaneously enhances both gain response speed, remarkable gain‐bandwidth product 1.18 × 10 , thereby overcoming conventional speed. Through comprehensive analysis device's physical dynamics, correlation PVFET performance, incident wavelength, Fermi level demonstrated. Notably, operates an exceptionally low power consumption 0.25 µW cm 2 . Building on superior characteristics, it further showcase potential in communication applications. The proposed provides promising reference development next‐generation high‐speed, high‐sensitivity photodetectors.

Language: Английский

Visible and Near‐Infrared Multi‐Modal Spectral Adaptation Organic Photodetector DOI

Meiyu He,

Jiayue Han, Lei Guo

et al.

Advanced Functional Materials, Journal Year: 2025, Volume and Issue: unknown

Published: April 14, 2025

Abstract In complex and diverse visual environments, machine vision faces higher demands for recognition capabilities, requiring more precise multimodal detection to obtain effective scene image data. However, current single device is still limited broadband without spectral selectivity or simple switching has yet achieve multi‐modal detection. this study, a back‐to‐back organic photodiode presented based on unique barrier effect design novel spectrum‐adaptive photodetector. Derived from the blocking lowering caused by voltage illumination, enables independent of visible (VIS) spectra narrowband near‐infrared (NIR) spectra, as well fusion VIS NIR light environment‐adaptive amplification By achieving within pixel, effectively simplifies structural complexity. The detector not only advances development electrically tunable bipolar research in dual‐terminal devices but also offers an innovative solution enhance accuracy dynamic environments.

Language: Английский

Citations

0
Bias‐Managed Photodetection Within Drain Interconnected Semi‐Gate Diode DOI
Yurong Jiang, Chen-Ting Liao,

Xuan Qin

et al.

Advanced Functional Materials, Journal Year: 2025, Volume and Issue: unknown

Published: Jan. 19, 2025

Abstract Image processing has become a quintessential data‐intensive computational task, and leveraging sensors with real‐time image been focused for the development of photodetectors. However, managing responsivity normally needs an additional gate voltage, which seriously limits application in resource‐constrained edge computing. Here, bias‐dependent photodiode (BD‐PD) semi‐gate interconnecting drain based on 2D MoS 2 /CIPS heterojunction is proposed, exhibiting ability to autonomously manage photo‐electrical characteristics without any voltage. Density functional theory validates that formation type‐I band alignment channel due bias synchronizing semi‐gate, inducing anomalous bias‐depended current dark reduced while photocurrent increased as increases. The high photodetection performances are exhibited including ultra‐high photo‐to‐dark ratio over 10 6 , detectivity 8×10 14 Jones, 3454 A W −1 at 3 V, respectively. Moreover, it demonstrated bias‐dependence BD‐PD can obviously improve preprocessing optical communication. This work provides promising platform neuromorphic optoelectronics.

Language: Английский

Citations

0
Solar-blind β-Ga2O3 photodetectors with high detectivity via semimetal Bi contacts DOI

Qihang Sun,

Jiayun Wei,

Wei Han

et al.

Surfaces and Interfaces, Journal Year: 2025, Volume and Issue: unknown, P. 106052 - 106052

Published: Feb. 1, 2025

Language: Английский

Citations

0
2D ReS2/3D Bi2O2Se Homo‐Heterojunction Photodetector Toward Near‐Infrared Polarization Sensitive Detection and High Sensitivity Communication DOI
Jun Gou,

Xiutao Yang,

Hang Yu

et al.

Laser & Photonics Review, Journal Year: 2025, Volume and Issue: unknown

Published: April 8, 2025

Abstract Conventional nm‐scale Bi 2 O Se‐based near‐infrared (NIR) photodetectors (PDs) exhibit commendable performance in terms of responsivity and response speed. Currently, the growing complexity application scenarios requires NIR PDs to possess not only these fundamental functionalities but also capability for polarization detection operation well under dim light conditions. Here, this study proposes 2D ReS /3D Se homo‐heterojunction PD, which exhibits high photo‐response speed, polarization‐sensitive capabilities, enhanced sensitivity spectrum. In detail, a device constructed from µm‐thick demonstrates photodetection at wavelength 850 nm, exhibiting ratio 1.4 achieved by applied voltage modulation. Based on photogating effect strong intrinsic absorption, PD can detect power level nW 1310 with speed ≈10 µs 34.8 A W −1 wavelength. Additionally, configuration an outstanding specific detectivity exceeding 10 Jones within range 700 nm. Even cut‐off 1550 achieves 9 Jones. The /Bi heterojunction shows promise advanced optoelectronic applications due its band.

Language: Английский

Citations

0
Tuning of MoS2 Photoluminescence in Heterostructures with CrSBr DOI Creative Commons
Satyam Sahu, Oleksandr Volochanskyi, Vaibhav Varade

et al.

ACS Applied Materials & Interfaces, Journal Year: 2025, Volume and Issue: unknown

Published: April 15, 2025

Monolayers of semiconducting transition metal dichalcogenides (TMDCs) are known for their unique excitonic photoluminescence (PL), which can be tuned by interfacing them with other materials. However, integrating TMDCs into van der Waals heterostructures often results in a significant quenching the PL because an increased rate nonradiative recombination processes. We demonstrate wide-range tuning intensity monolayer MoS2 interfaced another layered semiconductor, CrSBr. discover that thin CrSBr up to ≈20 nm thickness enhances MoS2, while thicker material causes quenching, is associated changes makeup driven charge redistribution CrSBr/MoS2 heterostructure. Transport measurements, Kelvin probe force microscopy, and first-principles calculations indicate this most likely n- p-type doping upon contact CrSBr, facilitated type II band alignment tendency act as electron sink. Furthermore, we fabricate efficient AC-regime photodetector responsivity 105 A/W from MoS2/CrSBr

Language: Английский

Citations

0
2D/Organic Photovoltage Field‐Effect Transistors DOI
Jiayue Han,

Tao Tuo,

Wenjie Deng

et al.

Laser & Photonics Review, Journal Year: 2025, Volume and Issue: unknown

Published: April 23, 2025

Abstract Detectors typically face a trade‐off between achieving high responsivity and high‐speed performance. Balancing these characteristics remains challenge. Developing broadband infrared detection that achieves while maintaining operation at room temperature is key objective for the next generation of sensing technologies. In this work, novel 2D/organic hybrid photogating field‐effect transistor (PVFET) capable spanning 488–1550 nm reported. This device simultaneously enhances both gain response speed, remarkable gain‐bandwidth product 1.18 × 10 , thereby overcoming conventional speed. Through comprehensive analysis device's physical dynamics, correlation PVFET performance, incident wavelength, Fermi level demonstrated. Notably, operates an exceptionally low power consumption 0.25 µW cm 2 . Building on superior characteristics, it further showcase potential in communication applications. The proposed provides promising reference development next‐generation high‐speed, high‐sensitivity photodetectors.

Language: Английский

Citations

0